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    44MPA0470

    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier 44MPA0470 March 2005 - Rev 15-Mar-05 Features Chip Device Layout tio n Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original
    15-mar-0544mpa0470mil-std-883 PDF

    P1016

    Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original
    p1016-bd15-feb-10mil-std-883xp1016-bd+6xp1016-bd-ev1xp1016p1016dm6030hkxp1016-bd-000vausn eutectic PDF

    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original
    p1016-bd04-dec-09mil-std-883xp1016-bd-ev1+1xp1016 PDF

    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier May 2005 - Rev 10-May-05 P1016 Features Chip Device Layout Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original
    10-may-05p1016mil-std-883 PDF

    DM6030HK

    Abstract: TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original
    p1016-bd11-aug-07mil-std-883xp1016-bd+5xp1016-bd-000vxp1016-bd-ev1xp1016dm6030hkts3332ld PDF

    ts333

    Abstract: P1016 tanaka epoxy tanaka TS3332LD DM6030HK TS3332LD XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1
    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD August 2007 - Rev 11-Aug-07 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original
    p1016-bd11-aug-07mil-std-883xp1016-bd+9xp1016-bd-000vxp1016-bd-ev1xp1016ts333p1016tanaka epoxytanaka ts3332lddm6030hkts3332ld PDF

    P1016

    Abstract: 84-1LMI 84-1LMIT
    Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier May 2005 - Rev 10-May-05 P1016 Features Chip Device Layout Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original
    10-may-05p1016mil-std-88384-1lmi+184-1lmit PDF