4484 MOS Search Results

4484 8 pin

Abstract: TLE 5025 4484 AEB02862 AEP02857 AES02863 Q67006-A9396 4484 mos vq15 TLE 4484 G
Contextual Info: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Target Data Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption

max14800

Abstract: MAX14801 MAX14802 medical ultrasonic probe medical ultrasound guide
Contextual Info: 19-4484; Rev 1; 9/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

medical ultrasonic probe

Abstract: MAX14803CCM MAX14802 medical ultrasound guide max14800 128 pin ultrasound probe ultrasound piezoelectric design probe transducer
Contextual Info: 19-4484; Rev 0; 4/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

230v 5v level shifter

Contextual Info: 19-4484; Rev 2; 11/10 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

Contextual Info: 19-4484; Rev 1; 9/09 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14800–MAX14803 provide high-voltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

PIEZOELECTRIC CABLE medical ultrasound capacitance

Contextual Info: 19-4484; Rev 2; 11/10 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

TLE 4484 G

Abstract: AEB02862 AEP02857 AES02863 Q67006-A9396 GSRH 4484 8 pin xs 004 a
Contextual Info: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected

MAX14803AEWZ

Abstract: MAX14803 MAX14802
Contextual Info: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

Contextual Info: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches Features The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital

AEB02862

Abstract: AEP02857 Q67006-A9396 4484 8 pin
Contextual Info: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected

Thomson ceramic capacitor

Abstract: TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC
Contextual Info: THOMSON MIL ET SPATIAUX SSE 1> • S02bfl7S DDDÜSÜ7 ^23 ■ THCM T^Hà- ASIC PRODUCTS TMS offers a wide range of ASIC's products : bipolar, MOS, BICMOS, linear, digital, gate arrays, standard cells, full custom. All — — — ASIC's products are available with the following screening levels :

sharp CCD Image Sensor

Abstract: sharp CCD Camera area CCD sensor 2.2 black V11R
Contextual Info: Developed High-Definition 1/1.72 Type 14M CCD CCD Area Image Sensor MN34520PL „ Overview MN34520PL, which is the most suitable for a high-definition digital still camera and a CCD image sensor with industry-leading 14,750 thousands pixels in the 1/1.72 type, has been developed. Using RGBBayer-array primary color on-chip filters enables excellent color

TSGB01

Abstract: TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080
Contextual Info: ASIC PRODUCTS THOMSON MIL ET SPATIAUX TMS offers a wide range of ASIC's products, BIPOLAR, MOS, LINEAR, DIGITAL GATE ARRAYS, STANDARD CELLS, FULL CUSTOM. All ASIC’s products are available with the following screening / quality classes: - Military temperature ra n g e ;

Contextual Info: • 4302571 QDSmiD tSü ■ HAS E5J HARRIS IRFP15 0 /1 5 1 /1 5 2 /1 53 IRFP150R/151 R /152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-247 TOP VIEW • 3 4 A and 40 A , 6 0 V - 1 0 0V • rD S on = 0 .0 5 5 H an d 0 .0 8 0

diode 4483

Abstract: IRFP150R irfp 350 n 4484 MOSfet
Contextual Info: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*

4485 40V N-Channel MOS

Abstract: RFG75N05E AN7254 AN7260 AN9321 AN9322
Contextual Info: RFG75N05E Data Sheet July 1999 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: SSÌ h a r fr is U S E M I C O N D U C T O R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460U The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

MEM551

Abstract: 3n207 3N208
Contextual Info: TYPE 3N207 DUAL P-CHANNEL ENHANCEMENT-TYPE INSULATED GATE FIELD EFFECT TRANSISTOR B U L L E T I N N O . D L - S 7 3 1 1 7 0 8 , A P R I L 1 9 7 2 - R E V I S E D M A R C H 1 9 7 3 TWO E N H A N C E M E N T -T Y P E t MOS SILIC O N TRAN SISTO RS

Contextual Info: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams -r~ r Memory Mappers With 3-State Outputs and Output Latches Description The 'F610 ana^F§12 memory mappers are designed to expand the address capability o f a Central Processing Unit CPU by eight bits. These

transistor C2001

Abstract: 3DC09 ConCorde MR 200 IC 7476 DONG YUNG 3DC11LP smd transistor 1589 7476 IC data 9806 ARISTON
Contextual Info: Worldwide Sales Network Headquarters: Premo Corporation S.L C/Conchita Supervía,13 08028 - Barcelona - Spain P: +34 934 098 980 F: +34 934 906 682 info@grupopremo.com www.grupopremo.com Manufacturing Plants: China PREMO Electronic Wuxi Bldg. No. 26-B Lot 52, Han Jiang Rd

74*612

Abstract: memory mapper 612
Contextual Info: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams - - Memory Mappers W iib3-State Outputs and Output Latches The ’F610 A d K f ir z jn e m o r y mappers are designed to expand the address c a p 4 | U t y ^ a C jp tra l Processing Unit CPU by eight bits. These

3 phase ac sinewave phase inverter single ic

Abstract: IC 7476 e 938 hall Effect sensor ARISTON transistor C2001 IC 7476 datasheet CH-6300 D89522 DONG YUNG OFF GRID SOLAR INVERTER IC
Contextual Info: Worldwide Sales Network Headquarters: Premo Corporation S.L C/Conchita Supervía,13 08028 - Barcelona - Spain P: +34 934 098 980 F: +34 934 906 682 info@grupopremo.com www.grupopremo.com Manufacturing Plants: China PREMO Electronic Wuxi Bldg. No. 26-B Lot 52, Han Jiang Rd

Contextual Info: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

F610

Abstract: F612 74f610 memory mapper 612 74 610 memory
Contextual Info: 610 54F/74F610 • 54F/74F612 612 • Connection Diagrams Memory Mappers With 3-State Outputs and Output Latches Description , The ’FCTO em ory mappers are designed to expand the address r r i p m n Cgptral Processing Unit CPU by eight bits. These devices c o n ta in ^ i^ b e n ^ p a A fe g ^ te r s , each con tain ing tw elve bits, that