4420 TRANSISTOR Search Results

picdem 2 plus demo board pic18f4520 examples

Abstract: DS39631A PIC18f4520 PWM example codes PIC18 4520 example C18 codes usart pic18f4520 pin diagram DS39631 PIC18F4520 PWM example code PIR SENSOR stabilization PIC18F2520 PIC18F4520 C18 codes
Contextual Info: PIC18F2420/2520/4420/4520 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology  2004 Microchip Technology Inc. Preliminary DS39631A Note the following details of the code protection feature on Microchip devices:

Contextual Info: PIC18F2420/2520/4420/4520 Data Sheet 28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39631C Note the following details of the code protection feature on Microchip devices:

pic16f877 full instruction set

Abstract: PIC16F877 Free Projects of pir sensor H bridge converter with dsPIC 18f2420 picdem 2 plus demo board pic18f4520 examples PIC16F877 Free Projects i2c PIC16F877 and Parallel port interfacing circuit PIC18F4520 PWM example code PIC18f4520 PWM example codes 18f242
Contextual Info: PIC18F2420/2520/4420/4520 Data Sheet Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 2007 Microchip Technology Inc. Preliminary DS39631B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

1N5420B

Abstract: uses of magnitude comparator LIMITING INRUSH CURRENT mosfet LTC 4120 P-Channel JFET 1N4148 AN21 J177 LMC7211 PT3320
Contextual Info: For assistance or to order, call AN21 Application Notes 800 531-5782 PT3100/3320/4100/4120/4420 Series More Application Notes “Hot Plug-in” In-rush Current Limiting Circuits for the PT3100/4100/3320 DC-DC Converters supply current to U1 is provided by resistors R3 and R4, which

2SC4420

Abstract: 5050u
Contextual Info: Pow er Tra n sisto rs 2SC 4420 2SC4420 S ilicon N P N Trip le -D iffu se d Planar Type P ack age D im ension s H igh B rea kdow n V o lta g e , High S p e e d S w itch ing U n it ! mm • Fe a tu re s 15. 5 m ax. • H ig h s p e e d s w itc h in g 6 . 9 m in

AO4420

Abstract: AO4420L
Contextual Info: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for

ZTX618

Abstract: ZTX718 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1

ztx1049a

Abstract: DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1049A t1 140 D=t1 tp D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 ra pe D=0.2 m te D=0.5 80 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 1 – JUNE 1995

FMMT3904

Abstract: FMMT3903 FMMT3905 FMMT3906 DSA003692
Contextual Info: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 94 FMMT3903 FMMT3904 ✪ COMPLIMENTARY TYPES – FMMT3903 - FMMT3905 FMMT3904 - FMMT3906 PARTMARKING DETAIL – E C B FMMT3903 - 1W FMMT3904 - 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

MOSFET 4420

Abstract: max4429epa max4429
Contextual Info: 19-0039; RevO; 11/92 / i / i / i x i / i / i High-Speed, 6A Single M OSFET Drivers _ A 4 0 n s delay tim e and a 25ns rise or fall tim e while driving

IXLD4429

Abstract: X1ev IXLD4425 IXLD IXLD429 IXLD4424 IXLD1426 ixld1428 C 4429 4429
Contextual Info: RTYVC • J A A I I X y S CORP IflE D ■ 4böb22b 0000723 5 I PRELIMINARY INFORMATION - p ü 5 2 ,- l^ - q o Latch-Immune High-Speed, High-Current Single MOSFET/IGBT Driver IXLD4420/4429 General Description Features The IX L D 4 4 2 0 /4 4 2 9 MOSFET/IGBT Drivers are tough, e ffi­

ZTX618

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 ISSU E 2 - JULY 1995_ FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A pulsed * * Extrem ely low saturation voltage e.g. 7 m V typ. lc cont 3.5A

NPN SOT23-6

Abstract: ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC DSA0037431 CM13A
Contextual Info: ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

FMMT620

Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

SMPS Controllers

Abstract: TC4431 application DS00786 SMPS circuit for charging 6v battery AN22 TC1410 TC1410N TC1411 TC1411N TC1427
Contextual Info: AN22 Driving Power MOSFETs in High-Current, Switch Mode Regulators Author: Abid Hussain, Microchip Technology, Inc. QG QGS The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

sot23-6 marking 718

Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
Contextual Info: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

NPN SOT23-6

Abstract: ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC DSA0037433
Contextual Info: ZXT10N20DE6 SuperSOT 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

NPN SOT23-6

Abstract: ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435
Contextual Info: ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

marking 705

Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

ZXT10P40DE6

Abstract: ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441
Contextual Info: ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

MO-187

Abstract: ZXT12P20DX ZXT12P20DXTA ZXT12P20DXTC T12P-2 DSA0037454
Contextual Info: ZXT12P20DX SuperSOT4 DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 64m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

JEDEC MO-187

Abstract: MO-187 ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC DSA0037477
Contextual Info: ZXT14P20DX SuperSOT4 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

t14n50

Abstract: JEDEC MO-187 MO-187 ZXT14N50DX ZXT14N50DXTA ZXT14N50DXTC DSA0037473 A1BL
Contextual Info: ZXT14N50DX SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 17m ; IC= 6A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give