44052 Search Results

Contextual Info: R-Series Carbon Film Fixed Resistor y iabilit logy • Rel y t Techno i l a n via w Qu o t-D Cos Specifications Per R-Series • IEC 115-1 115-4 • MIL R-10509 • DIN 44051 44052 d H L Features D • Conformal multi-layer coating flame proof coating available

Contextual Info: IG Ignition Fixed Resistor y iabilit logy • Rel y t Techno i l a n via w Qu o t-D Cos Specifications Per • IEC 115-1 115-4 • MIL R-10509 • DIN 44051 44052 IG d H L Features D • Special coating technique to ensure fast ignition • Color code per MIL & EIA standards

61558-2-6

Abstract: MYRRA 44051 CURRENT TRANSFORMER myrra 44058 an 44050 en 61558 transistor 9-t VOLTAGE TRANSFORMER datasheet of transformer of va rating 28
Contextual Info: Protection Reference 44049 44050 44051 44052 44053 44054 44055 44056 44057 44058 44059 44060* PRIMARY VOLTAGE Secondary Secondary No-load voltage Current voltage V mA V 6 167 8,6 9 111 12,9 12 83 17,2 15 67 21,6 18 56 25,9 24 42 37,9 2x6 2 x 83 2 x 8,6 2x9

Contextual Info: Inductive sensor NI4-M12-AD4X • Threaded barrel, M12 x 1 ■ Chrome-plated brass ■ DC 2-wire, 10…65 VDC ■ NO contact ■ Cable connection Wiring diagram Type code Ident no. NI4-M12-AD4X 44052 Rated operating distance Sn Mounting condition Assured sensing range

Contextual Info: R-series Carbon Film Fixed Resistor Specifications Per ● IEC 115-1 115-4 ● MIL R-10509 ● DIN 44051 44052 Features ● Conformal Multi-layer Coating ● Color Code Per MIL & EIA Standards ● Special Tin Plated Electrolytic Copper Lead Wire Dimensions:

RA55H4452M

Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

PIHER 326 M

Abstract: RLR20 resistors
Contextual Info: Fixed resistors OI PIHER GLC CM ." Series V2 Watt Carbon Film Resistors • New in the range o f carbon film resistors, the G L O -O H M offers an increased d issip a tio n of 0.5 W 70°C by using a newly form ula ted ceram ic nucleus. % Electrical Characteristics

SIEMENS BB409

Abstract: bb409
Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/

RA13H4452M

Abstract: RA13H4452M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RA45H4452M

Abstract: RA45H4452M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

RA07M4452M

Abstract: generator 4.20 mA
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier

RA60H4047M1

Abstract: RA60H4452M1
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-078-B Date : 26th Sep. 2006 Rev. date : 22th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1

ITT Cannon Connectors FCI 851 Series

Abstract: NATC06 SBP-15 MS3456 TORQUE 440072 620-053
Contextual Info: Circular Connector Backshells and Accessories U n i t e d S t a t e s „ U n i t e d K i n g d o m „ G e r m a n y „ F r a n c e „ N o r d i c „ I t a l y „ Spain Introducing the "NESTOR" AS85049 Style "N" Coupling Spring-Loaded, Positive-Lock Backshells

RA07N4452M

Abstract: RF MOSFET MODULE RA07N4452
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to

RA07M4452MSA

Abstract: RA07M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to

RA60H4047M1

Abstract: ra60h4047m1 application note RA60H4452M1 AN-UHF-078-A RA60H4047M ra60h4047
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-078-A Date : 26th Sep. 2006 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1

CR16

Abstract: CR16A CR16B CR32
Contextual Info:  CompactRISC CR16 Development Toolset Beta Version 2.0 Release Letter Part Number: 433521772-001 January 1998  1998 National Semiconductor Corporation ii PREFACE This release letter describes the CompactRISC Development Toolset, Version 2.0, for the

Contextual Info:  CompactRISC Debugger Communication Interface DbgCom Beta Version 0.80 Release Letter Part Number: 433521771-001 August 1998 PREFACE This release letter describes the Debugger Communication Interface (DbgCom) Beta Version 0.80 for CompactRISC debuggers.

RA07H4452M

Abstract: RA07H4452M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz

RA30H4452M

Abstract: RA30H4452M-01 RA30H4452M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to

PC87307

Abstract: PC97307 PC87307EB PC87307/PC97307
Contextual Info: SuperI/O PC97307-IBW/EB Release Letter Part Number: 433521688-701 February 1998  2 1998 National Semiconductor Corporation PREFACE This release letter describes the PC97307-IBW Evaluation Board PC97307-IBW/EB , which is designed to verify the I/O functions of the PC97307-IBW/VUL chip.

RA60H4047M1

Abstract: mitsubishi bipolar rf power RA60H4452M1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-UHF-078 Date : 26th Sep. 2006 Prepared : K. Mori Confirmed : S.Kametani SUBJECT: Electro Static Sensitivity for RA60H4452M1 and RA60H4047M1 GENERAL: RA60H4452M1 and RA60H4047M1 use MOS FET device.

Contextual Info: Three Phase Filters 440-520Vac 8-450 Amps F.LL.D3.*A.AN/HN. *1 series Industrial Applications Description Mechanical Specification Electrical Specifications Rated Voltage VR : ‘AN’: 440Vac, 50/60Hz at 40˚C ‘HN’: 520Vac, 50/60Hz at 40˚C Leakage Current(IL) : At VR/ √3, 50Hz, max value

Contextual Info: <Silicon RF Power Modules > RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the