43EL Search Results

FPD6836SOT343E

Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
Contextual Info: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

Digital clock MODULE CIRCUIT DIAGRAM

Abstract: MC68HC908GR8 CPU08 HC05 M146805 M6805 M68HC05 M68HC08 MC68HC908GR4 DSA0039292
Contextual Info: MC68HC908GR8/D MC68HC908GR8 MC68HC08GR8 MC68HC908GR4 Advance Information Rev 1.0 April 27th, 2001 List of Sections List of Sections List of Sections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Table of Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

322125

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 19 RELEASED BY AMP FOR ALL I NC OR P O R A T E D . PUBLICATION RIGHTS , 19 LOC RESERVED. DI S T G REVISIONS 14 LTR REVISED F D DESCRIPTION PER 0L20-0178-97 D ATE DWN APVD 03N0V97 DKS CHK D DINPUES METALL I C IN5UUAT

MSG100L43

Abstract: MSG100U43 MSG100Q43 SCR MODULE MSG100
Contextual Info: SCR MODULE SILICON DIFFUSED TYPE MSG100 G,L,Q,U 43 POWER CONTROL APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage: V^rm J =4 oo ~1600V Repetitive Peak Reverse Voltage : VRRM . Average On-State Current(Per SCR): It (AV)=50A . Critical Rate of Rise of Off-State Voltage

MSG180U43

Contextual Info: SCR MODULE SILICON DIFFUSED TYPE MSG180 G,L,aU 43 P OWER CO N T R O L AP PL IC A T I O N S . FEATURES : . Repetitive Peak Off-State Voltage: Vdrm ( _/ =400~1600V Repetitive Peak Reverse Voltage : Vr r m . Average On-State Current(Per SCR): !t (AV)=90A . Critical Rate of Rise of Off-State Voltage

ME129

Abstract: MSA180Q43
Contextual Info: THYRISTOR MODULE SILICON DIFFUSED TYPE MSA180 G,L,Q,UM3 POWER CONTROL APPLICATIONS. FEATURES: . Repetitive Peak Off-State Voltage: Vj gM =400-1600V Repetitive Peak Reverse Voltage : Vr r m . Average On-State or Forward Current: It (AV)=1f (AV)=90A . Critical Rate of Rise of Off-State Voltage

Contextual Info: THI S DRAWING I S UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 19 LOC ALL RIGHTS RESERVED. DI ST G REVISIONS 14 LTR REVISED G D D ESC RIPTIO N PER 0L20-0178-97 DATE DWN APVD 310CT97 DKS CHK D DIMPLE5 METALLIC 5LE 1 3 . 0 8 IN50DAT

KM23C2000

Contextual Info: KM23C2000 CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •

TOSHIBA THYRISTOR

Contextual Info: THYRISTOR MODULE MSA60 G,L,Q,U 43 SILICON DIFFUSED TYPE POWER CONTROL APPLICATIONS. FEATURES: Unit in mm . Repetitive Peak Off-State Voltage: VdrM i = 4qo~1600V Repetitive Peak Reverse Voltage : Vrrm ' . Average On-State or Forward Current: It (AV)=IF(AV)=30A

MSA100L43

Abstract: CM119
Contextual Info: THYRISTOR MODULE SILICON DIFFUSED TYPE MSA100 G,L,Q,U 43 POWER CONTROL APPLICATIONS. FEATURES : . Repetitive Peak Off-State Voltage: V d r m =400-1600V R epetitive Peak Reverse Voltage : Vr r m . Average On-State or Forward Current: T'f(AV), IF (AV) = 50A