43A MARKING CODE Search Results

43B diode

Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
Contextual Info: Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1 BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings

marking 43a

Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Contextual Info: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFH5207

Abstract: N-Channel 40V MOSFET
Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

Contextual Info: StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application • Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

marking code 43a

Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

Contextual Info: IRF1010NS IRF1010NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D 2 P ak T O -26 2 IRF1010NL IRF1010NS Description The D2Pak is a surface mount power package capable of

Contextual Info: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!

AN-994

Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Contextual Info: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

AN-994

Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

marking code 43a

Abstract: IRFP054N 43A MARKING CODE irf1010 applications marking 43a IRF1010 IRFPE30
Contextual Info: PD 9.1382 IRFP054N PRELIMINARY HEXFET Power MOSFET ● ● ● ● ● Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012Ω ID = 72A Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRF2807S IRF2807L Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l TO-262 IRF2807L D2Pak IRF2807S l Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve

marking code 43a

Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Contextual Info: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ

Contextual Info: PD - 94970A IRF2807PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description

IRF2807PBF

Abstract: IRF1010
Contextual Info: PD - 94970A IRF2807PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 75V RDS on = 13mΩ G ID = 82A‡ S Description

Contextual Info: PD - 94966A IRF1010NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 11mΩ G ID = 85A‡ S Description

IRF1010N

Abstract: 43A MARKING CODE marking code 43a IRF1010
Contextual Info: PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description Fifth Generation HEXFETs from International Rectifier utilize advanced

marking 43a

Abstract: AN-994 IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

irf2807 equivalent

Contextual Info: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1

SD 1029 MOSFET

Abstract: diode LT 42
Contextual Info: PD -9.1518 International IÖR Rectifier IRF2807S/L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

IRF1010N

Contextual Info: PD - 95418 IRFI1010NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description