437 IC Search Results

BD433

Abstract: BD434 BD435 BD436 BD437 BD438
Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd435 fairchild

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

GALAXY MILLENNIUM Controller Product Manual

Abstract: 596B4 596B4 alarm code galaxy vector controller three phase distribution panel schematic H569 167-792-180 GALAXY MILLENNIUM Galaxy Power Galaxy rectifier controller
Contextual Info: Galaxy Power System 2424 GPS 2424 H569-437 User’s Guide Select Code 167-792-159 Comcode 108305251 Issue 8 January 2008 User’s Guide Select Code 167-792-159 Comcode 108305251 Issue 8 January 2008 Galaxy Power System 2424 (GPS 2424) H569-437 Notice: The information, specifications, and procedures in this manual are

transistor tic 2260

Abstract: 54LS165A transistor 1yc s437 74s437 74s436
Contextual Info: TYPES SN54S436, SN54S437, SN74S436, SN74S437 LINE DRIVER/MEMORY DRIVER CIRCUITS D 2 6 3 0 , JA N U A R Y 1 981 -R E V IS E D APRIL 1 9 8 5 MOS M EM O RY IN TER FAC E • Can Drive High-lm pedance Loads S N 54S 436, SN 54S 437 . . . J OR W PACKAGE SN 74S 436, SN 74S 437 . . . D, J OR N PACKAGE

Contextual Info: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

MC3340P

Contextual Info: MC3340P Linear ICs Attenuator/Electronic Volume Control status Military/High-RelN Maximum Frequency Hz 10.0M Nom. Supp (V)20.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70 Package StyleDIP Mounting StyleT Pinout Equivalence Code8-437 # Pins8

Contextual Info: SSE D N AMER PHI LIP S/ DIS CR ET E ^53131 0020320 fl B U K 437-500A B U K 437-500B P o w e rM O S tra n s is to r T ~ 3 7 ” 15- G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: UAF11 Linear ICs Active Filter for Telecommunications status Military/High-RelN Nom. Supp V 15ñ Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)85 Package StyleDIP Mounting StyleT Pinout Equivalence Code14-437 # Pins14 Ckt. (Pinout) NumberLN01400437

Contextual Info: TDA2710 Linear ICs Chroma Processor Circuit status Nom. Supp V 12 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)50 Package StyleDIP Mounting StyleT Pinout Equivalence Code16-437 # Pins16 Ckt. (Pinout) NumberLN01600437 DescriptionChroma Signal/Mixer for VTR

BD435

Abstract: BD437 BD433 TRANSISTOR BD433
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 4 A ICM: Collector-base voltage BD433 22 V V(BR)CBO:

BD437

Abstract: BD433 ic 437 BD434 BD435 437 ic
Contextual Info: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD435

Abstract: ic 435 BD433 BD437
Contextual Info: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

Contextual Info: TDA5145T Linear ICs Brushless; Multi-Phase dc Motor Driver statusû Military/High-RelN I out Max.2 Nom. Supp (V)14.5 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70 Package StyleSO Mounting StyleS Pinout Equivalence Code28-437 # Pins28 Ckt. (Pinout) NumberLN02800437

BD435

Abstract: transistor bd435 BD433 BD434 BD436 BD437 BD438
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD433 : BD435 : BD437 Collector Emitter Voltage : BD433

BD435

Abstract: BD437 transistor BD435 BD433 ic 437
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD434

Abstract: BD438 BD436
Contextual Info: SavantIC Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD433/435/437 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD434

Abstract: BD436 ic 438 BD438
Contextual Info: Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD441

Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Contextual Info: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

din 72585

Abstract: 50035-G32 K12B din 46244 6.3X0.8 72585 m6x1648 metric screw tightening Torque din 72585 4 pin din 72585 form 1 M10X
Contextual Info: High Performance Thermal-Magnetic Circuit Breaker 437-. Description Single pole high performance thermal-magnetic circuit breaker with tease-free, trip-free, snap action mechanism and toggle actuation S-type TM CBE to EN 60934 . Options include auxiliary contacts, a

sinus

Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V

Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.