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TURCK Inc


TURCK Inc RSS RJ45S 843-55M Nhb; \|Turck RSS RJ45S 843-55M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RSS RJ45S 843-55M	Bulk			1	1 $479.10 10 $479.10 100 $479.10 1000 $479.10 10000 $479.10	Buy Now
TURCK Inc RKSD RJ45S 443-55M Nhb; \|Turck RKSD RJ45S 443-55M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RKSD RJ45S 443-55M	Bulk			1	1 $428.20 10 $428.20 100 $428.20 1000 $428.20 10000 $428.20	Buy Now
TURCK Inc RSSD RJ45S 443-55M Nhb; \|Turck RSSD RJ45S 443-55M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RSSD RJ45S 443-55M	Bulk			1	1 $364.20 10 $364.20 100 $364.20 1000 $364.20 10000 $364.20	Buy Now
TURCK Inc RSSD RSSD 443-55M/C1195 Neu; \|Turck RSSD RSSD 443-55M/C1195
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RSSD RSSD 443-55M/C1195	Bulk			1	1 $435.70 10 $435.70 100 $435.70 1000 $435.70 10000 $435.70	Buy Now
TURCK Inc RJ45SG RJ45 843-55M/C1195 Nhb; \|Turck RJ45SG RJ45 843-55M/C1195
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RJ45SG RJ45 843-55M/C1195	Bulk			1	1 $390.90 10 $390.90 100 $390.90 1000 $390.90 10000 $390.90	Buy Now

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4355M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
38816 Abstract: ED-4701 FLM1414-15F Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION	Original	flm1414-15f 38816 ed-4701	PDF
Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=26%(Typ.) ・Broad Band: 14.0～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION	Original	flm1414-15f	PDF
SIDC08D120F6 Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:	Original	sidc08d120f6 q67050-a4169a001 4355m	PDF
Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB = 42.0dBm Typ. ・High Gain: G1dB = 6.0dB(Typ.) ・High PAE: ηadd = 26%(Typ.) ・Broad Band: 14.0 ～ 14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package	Original	flm1414-15f fcsi0202m200	PDF
A001 Abstract: SIDC08D120F6 Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF A This chip is used for:	Original	sidc08d120f6 q67050-a4169sawn 4355m a001	PDF
SIDC08D120F6 Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications:	Original	sidc08d120f6 q67050-a4169a001 4355m	PDF
4355M Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF A This chip is used for:	Original	sidc08d120f6 q67050-a4169sawn 4355m	PDF