432S2030B Search Results

Contextual Info: Preliminary CMOS SDRAM 432S2030B 512K X 32Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 432S2030B is 67,108,864 bits synchronous high data • JEDEC standard 3.3V power supply • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 4 x 524,288 w ords by 32 bits,

KM432S2030B

Contextual Info: 432S2030B Preliminary CMOS SDRAM Revision History Revision .2 May 1998 Pin #70 MCH is changed to N.C. REV. 2 May '98 ElüCTRöNiCS Preliminary CMOS SDRAM 432S2030B 512K X 32Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 432S2030B is 67,108,864 bits synchronous high data

Contextual Info: 432S2030B Preliminary CMOS SDRAM R e v is io n H is to ry R e v is io n .2 M a y 1 9 9 8 P in # 7 0 M C H is c h a n g e d to N .C . R e v is io n .3 (J u n e 1 9 9 8 ) - ICC3N & IC C 3N S is u p d a te d . - T h e D e s c ip tio n o f M C H o n th e "P in F u n c tio n D e s c rip tio n " is d e le te d a n d th a t o f N C is a d d e d .

Contextual Info: Preliminary CMOS SDRAM 432S2030B 512K X 32Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The 432S2030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS technol­

Contextual Info: 432S2030B Preliminary CMOS SDRAM R evision H istory R evision .2 M ay 1998 Pin #70 M CH is cha ng ed to N.C. R evision .3 (June 1998) - ICC3N & ICC3NS is updated. - T h e D esciption of M CH on the "Pin F unction D e scriptio n" is deleted and that of NC is added.