430-A Search Results
430-A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TK430A60F |
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MOSFET, N-ch, 600 V, 13 A, 0.43 Ohm@10V, TO-220SIS | Datasheet | ||
| 922-430A-F3H |
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XCede HD, Backplane Connectors, Right Angle Header HSD, 4-pair, 6-column, 100ohms. | |||
| 915-430A-F0H |
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XCede HD Plus, Backplane Connectors, Right Angle Receptacle With Extra Ground, 4-pair, 8-column, 100ohms. | |||
| MSP430AFE221IPW |
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16-bit Ultra-Low-Power Microcontroller, 4KB Flash, 256B RAM, 1x SD24 24-TSSOP -40 to 85 |
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| MSP430AFE251IPW |
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16-bit Ultra-Low-Power Microcontroller, 16KB Flash, 512B RAM, 1x SD24 24-TSSOP -40 to 85 |
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430-A Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMH70R430AF
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Jiangsu JieJie Microelectronics Co Ltd | 700V 11A N-Channel Power MOSFET in TO-220FP-3L package with 350mW typical RDS(ON) at 10V VGS, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. | Original | ||||
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CWS70R430AF
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Wuhan Xinyuan Semiconductor Co Ltd | 700V, 30A N-Channel Super Junction MOSFET with 430 mΩ RDS(on), designed for high-efficiency power applications including PFC, SMPS, UPS, and LED lighting, available in TO-220, TO-220F, and TO-247 packages. | Original | ||||
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JMH65R430APLN
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Jiangsu JieJie Microelectronics Co Ltd | 650V SuperJunction Power MOSFET in DFN8080-4L package with 370 mΩ RDS(ON) at 10V VGS, 10.4A continuous drain current, low gate charge, and fast switching capability for telecom, industrial, and power supply applications. | Original | ||||
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JMH65R430ACFP
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Jiangsu JieJie Microelectronics Co Ltd | 650 V, 11.2 A superjunction power MOSFET in a TO-220FP-NL package with 364 mΩ typical RDS(ON) at 10 V VGS, low gate charge, and fast switching capability for industrial, telecom, and power supply applications. | Original | ||||
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JMH70R430AK
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Jiangsu JieJie Microelectronics Co Ltd | 700V 12A N-Ch Power MOSFET in TO-252-3L package with 352mΩ typical RDS(ON) at 10V VGS, featuring low gate charge, fast switching, and rugged dv/dt performance for industrial and power supply applications. | Original | ||||
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CWS70R430ADR
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Wuhan Xinyuan Semiconductor Co Ltd | 700V, 30A N-Channel Super Junction MOSFET with 430 mΩ RDS(on), designed for high-efficiency power applications including PFC, SMPS, UPS, and LED lighting, available in TO-220, TO-220F, and TO-247 packages. | Original | ||||
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JMH65R430AF
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Jiangsu JieJie Microelectronics Co Ltd | 650V SuperJunction Power MOSFET in TO-220FP-3L package with 364 mΩ RDS(ON) at 10V VGS, 11.2A continuous drain current, low gate charge, and fast switching capability for industrial, telecom, and power supply applications. | Original | ||||
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JMH65R430AE
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Jiangsu JieJie Microelectronics Co Ltd | 650 V, 11.2 A superjunction power MOSFET in TO-263-3L package with 430 mΩ RDS(ON) at 10 V VGS, featuring low gate charge, fast switching, and avalanche current rating of 6 A. | Original |
430-A Price and Stock
TE Connectivity
TE Connectivity 3430A2F47RTDF3430 A2 1% 47R 100PPM 1K RL |
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TE Connectivity 3430A3F300KTDF3430 A3 1% 300K 100PPM 1K RL |
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TE Connectivity 3430A2F10RTDF3430 A2 1% 10R 100PPM 1K RL |
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TE Connectivity 3430A3F47KTDF3430 A3 1% 47K 100PPM 1K RL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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