426EH2AB1 Search Results

Contextual Info: 426EH2AB1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current500m V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time250n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.4 @I(FM) (A) (Test Condition)1.0

1N5480

Abstract: 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800
Contextual Info: CONDITIONING S E M I C O N D PVC Ï Ë Ï aaSBMAI OOQOllI T'2-3 ' ^ 5 Silicon Rectifier Modules CSác Up to 20,000 Volts Up to 6.0 Amps FEATURES: • • • • • • • All types utilize fully glassivated, non-cavity silicon diode building blocks. Hermetically sealed devices.

IN5480

Abstract: 423PD10AE1 IN1733 IN548 IN5482 425SH6AB1 IN5484 IN1730 IN5478 NKV20F
Contextual Info: 2323489 CONDITIONING SEMICOND DVC f* r :• a , f t -, vK .r " - r . Type No. z Q 5 o Q o f I v" ± £- " i * -V.V -V _ ; :> V f? p f Max. Peak forward Voltage Vfm 40 40 40 40 40 40 0.070 0:042 0.021 0.017 0.014 0.007 3 3 2 2 2 1 0.01 0.01 0.01. 0.01 0.01