420 TRANSISTOR Search Results

BT3904

Abstract: BC850B2
Contextual Info: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat

bob smith termination POE

Abstract: SLVU301 B1100 DIODE ETH1-230LD HPA420 panasonic ce series Capacitor 100V ETH1-230L TP10 TPS23754 coilcraft and bob smith termination
Contextual Info: User's Guide SLVU301 – April 2009 TPS23754EVM-420 EVM: Evaluation Module for TPS23754 This User’s Guide describes the TPS23754 EVM TPS23754EVM-420 . TPS23754EVM-420 contains evaluation and reference circuitry for the TPS23754. The TPS23754 is an IEEE 802.3at compliant

BF422

Abstract: BF 422 F495 bf420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

BF 422

Contextual Info: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion

SOT23

Abstract: SOT323 BCX70G SOT23 BCF33 956 sot23 BCF30 sot23 bcf81 transistor 1061 BC850C SOT-23
Contextual Info: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE BC850C SOT23 45 100 250 420 800 100 BC860C 324 BC850CW SOT323 45 100 200 420 800 100

F495

Abstract: BF420 0-5 v to 4-20 ma ic Q62702-F495 Q62702-F531 422 TO92 BF422
Contextual Info: NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 421, BF 423 PNP ● 2 3 1 Type Marking Ordering Code BF 420 BF 422 – Q62702-F531

420 NPN Silicon RF Transistor

Contextual Info: e PTB 20030 15 Watts, 420–470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

100n capacitor tantalum

Abstract: 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design
Contextual Info: TANTALUM AND NIOBIUM OXIDE CAPACITORS EQUIVALENT CIRCUIT MODEL APPLICABILITY TO SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT

Contextual Info: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Mn2O3

Abstract: AVX solid tantalum capacitor SMD Transistor 7er tantalum capacitors surge current
Contextual Info: VOLTAGE DERATING RULES FOR SOLID TANTALUM AND NIOBIUM CAPACITORS T. Zednicek AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 email zednicekt@avx.cz J.Gill AVX Limited, Long Road, Paignton

Equivalent Circuit Model for Tantalum and Niobium Oxide Capacitors for use in Simulation Software

Abstract: 120NQ045 SG1524B TPSV108K004R0035 100n capacitor tantalum
Contextual Info: EQUIVALENT CIRCUIT MODEL FOR TANTALUM AND NIOBIUM OXIDE CAPACITORS FOR USE IN SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT

20031

Abstract: 9434
Contextual Info: e PTB 20031 40 Watts, 420–470 MHz RF Power Transistor Description The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20030 15 Watts, 420-470 MHz Cellular Radio RF Power Transistor D escription The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for

Contextual Info: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D e s c rip tio n The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and

ths30011

Contextual Info: THS3001 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER SLOS217 —JULY 1998 High Speed - 420 MHz Bandwidth G = 1, - 3 dB - 6500 V/^s Slew Rate - 40-ns Settling Time (0.1%) applications Scanning and Imaging Systems IF and RF Amplification High Output Drive, Iq = 100 mA

Voltage Derating Rules for Solid Tantalum and Niobium Capacitors

Contextual Info: Voltage Derating Rules for Solid Tantalum and Niobium Capacitors Tomáš Zedníček AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 467 558 126 Fax: +420 467 558 128 e-mail: tomas.zednicek@eur.avx.com John Gill AVX Limited, Long Road, Paignton

Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217F – JULY 1998 – REVISED JUNE 2007 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

THS3001

Abstract: THS3001CD THS3001CDR THS3001ID THS6012 THS6022 9551M
Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217D – JULY 1998 – REVISED OCTOBER 2004 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

THS3001

Abstract: THS3001CD THS3001CDR THS6012 THS6022
Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate

THS3001

Abstract: THS3001CD THS3001CDR THS6012 THS6022
Contextual Info: DGN−8 THS3001 D−8 www.ti.com SLOS217E – JULY 1998 – REVISED MARCH 2005 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • High Speed – 420 MHz Bandwidth G = 1, -3 dB – 6500 V/µs Slew Rate