41MG Search Results

Contextual Info: SMD Power Inductor C322510/DS Description • Multilayer power inductor. • Magnetically shielded. • L W H: 3.35 2.65 1.0 mm Max. • Product weight: 41mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

1041MGL3

Abstract: 1141MGL3 1241MGL3 26LS31 41MGA 41MGL3
Contextual Info: Data Sheet fE m A T s T ' Microelectronics 41MGL3 Quad Differential Line Driver Features Description • True 3-state output The 4 1 M G L3 Q uad D ifferential Line D river integrated circuits are quad TTL-input-to-pseudo-E C L-differential-output line drivers fo r digital data transm ission

HL6340MG

Abstract: HL6341MG
Contextual Info: HL6340MG/41MG ODE-208-035A Z Rev.1 Feb. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

HL6340MG

Abstract: HL6341MG
Contextual Info: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

Contextual Info: Data Sheet t s. f l U jiif 'Microelectronics 41MGL3 Quad Differential Line Driver Features Description • True 3-state output The 41MGL3 Quad Differential Line Driver integrated circuits are quad TTL-input-to-pseudo-ECL-differential-output line drivers for digital data transmission

MA332

Contextual Info: SMD Power Inductor C322510/DS Description • Multilayer power inductor. • Magnetically shielded. • L W H: 3.35 2.65 1.0 mm Max. • Product weight: 41mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

Hitachi DSA00280

Contextual Info: HL6340MG/41MG Circular Beam Low Operating Current ADE-208-1437B Z Rev.2 Mar. 2002 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These

26LS31 esd

Abstract: 1041MGA 1041MPA 1141MPA 26LS31 41MGA 41MPA ATT Microelectronics 1141MGA
Contextual Info: Data Sheet June 1994 % A D S .T Microelectronics 41MGA and 41 MPA Quad Differential Line Drivers Features Description • Pin equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption, and significantly lower levels of EMI

Contextual Info: SMD Power Inductor C322510/DS Description • Multilayer power inductor. • Magnetically shielded. • L W H: 3.35 2.65 1.0 mm Max. • Product weight: 41mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

Contextual Info: SMD Power Inductor C322510/DS Description • Multilayer power inductor. • Magnetically shielded. • L W H: 3.35 2.65 1.0 mm Max. • Product weight: 41mg Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

HL8340MG

Abstract: HL8341MG
Contextual Info: HL8340MG/41MG ODE2056-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8340MG/41MG are 0.85 m band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.

HL6312G

Abstract: HL6340MG HL6341MG
Contextual Info: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437C Z Rev.3 Jan. 2003 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These

MGA1141

Abstract: 1141MGA
Contextual Info: Microelectronics 41MGA and 41 MPA Quad Differential Line Drivers Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption, and significantly lower levels of EMI ■ Four line drivers per package ■ Meets ESDI standards

Contextual Info: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

Contextual Info: Microelectronics 41MGL3 Quad Differential Line Driver Features Description • True 3-state output T he 4 1 M G L3 Q uad Differential Line D river integrated circuits are quad T TL-input-to-pseudo-E C L-differen- ■ Pin equivalent to the general-trade 26LS31 device

Contextual Info: Data Sheet HL8340MG/41MG GaAlAs Laser Diode 852nm/50mW Features: Outline • Infrared light output: 852nm Typ.  Single transverse mode  Optical output power: 50mW CW  Low operating current: 75mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: +60C

HL6312G

Abstract: HL6340MG HL6341MG
Contextual Info: HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437D Z Rev.4 Mar. 2005 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are

Contextual Info: HL6340MG/41MG ODE2019-00 M Rev.0 Aug. 01, 2008 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 m band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

SAMSUNG 0805 thick film resistor

Contextual Info: Thick Film Chip Resistors RC General Thi k Film Thick Fil General G l Chip Chi Resistors R i t - 1005(0402), 1608(0603), 2012(0805), 3216(1206), 3225(1210), 5025(2010), 6432(2512) • Features ● ● ● ● ● Small, thin and lightweight High reliability

Contextual Info: GQM22M5C2H510FB01# # indicates a package specification code. < List of part numbers with package codes > GQM22M5C2H510FB01L , GQM22M5C2H510FB01K Shape References Packaging Specifications Minimum quantity L φ180mm Embossed taping 1000 K φ330mm Embossed taping

Contextual Info: GQM22M5C2H140JB01# # indicates a package specification code. < List of part numbers with package codes > GQM22M5C2H140JB01L , GQM22M5C2H140JB01K Shape References Packaging Specifications Minimum quantity L φ180mm Embossed taping 1000 K φ330mm Embossed taping

Contextual Info: Tantalum Product - TLJ Consumer Series A Kyocera Group Company PRODUCT SPECIFICATIONS : Nominal Capacitance @ 120Hz 100µF Capacitance Tolerance * M = ± 20% Rated Voltage (VR)-55°C +40°C 6.3V Category Voltage (VC) at 85°C 3.15V Category Voltage (VC) at 125°C

RF LNA 10 GHz

Abstract: CRG16G GRM36 HK1005 NJG1705V SSOP10
Contextual Info: NJG1705V 1.5/1.9GHz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9GHz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz and 2.1dB at 1.9GHz at low total current

Contextual Info: Tantalum Product - TLJ Consumer Series A Kyocera Group Company PRODUCT SPECIFICATIONS : Nominal Capacitance @ 120Hz 47µF Capacitance Tolerance * M = ± 20% Rated Voltage (VR)-55°C +40°C 10V Category Voltage (VC) at 85°C 5V Category Voltage (VC) at 125°C