41BR Search Results

41BR

Contextual Info: 41 BR M , 41 EE(L) Quad 2-Input NOR Gate The 41BR(M) and 41EE(L) devices are bipolar, NPN, sealed junction, silicon integrated circuits. They are available in wire-bonded, 16-pin plastic DIPs. Electrical Characteristics Vcc = 5.0 ± 0 .5 V, T j = 0 to 8 5 '

G3VM

Abstract: 41BR
Contextual Info: MOS FET Relays G3VM-41BR/ER Higher Power, 3.5A switching with a 40V load, DIP package. Low 30 mΩ ON Resistance. • Continuous load current of 3.5A Connection C: 7A • Switches minute analog signals • Dielectric strength of 2,500 Vrms between I/O • RoHS Compliant

Contextual Info: MOS FET Relays G3VM-41BR/ER Higher Power, 3.5A switching with a 40V load, DIP package. Low 30 mΩ ON Resistance. • Continuous load current of 3.5A Connection C: 7A • Switches minute analog signals • Dielectric strength of 2,500 Vrms between I/O • RoHS Compliant

Omron

Abstract: G3VM-41 G3VM-41BR
Contextual Info: G3VM-41BR/ER MOS FET Relays DIP Higher power, 3.5-A switching with a 40-V load voltage, DIP package. Low 30 mΩ ON Resistance. • Continuous load current of 3.5 A. Connection C: 7 A • Switches minute analog signals. G3VM-41BR/ER • Dielectric strength of 2,500 Vrms between I/O.