416V1204 Search Results

Contextual Info: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KMM332F204AT-L KMM332F224AT -L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V G EN ERA L FEATURES DESCRIPTIO N The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KM M 466F10 2 4AT-L is a 1M bit x • Part Identification

416V1204

Abstract: KMM332F224BT-L6
Contextual Info: Preliminary KMM332F204BT-L KMM332F224BT-L ORAM MODULE KMM332F204BT-L / KMM332F224BT-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, Low P o w er, 4K & 1K Refresh, 3.3V GENERAL FEATURES D E S C R IP T IO N The Samsung KM M 332F20 2 4BT is a 2M bit X 32 Dynam ic RAM high density m em ory module. The

16v1204

Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
Contextual Info: 416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

C1204C

Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C
Contextual Info: KM416C1004C, KM416C1204C KM416V1004C, 416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the sam e row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K

Contextual Info: DRAM MODULE KMM374F124AJ KMM374F124AJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Sam sung KM M 374F124AJ is a 1M bit x 72 • Part Identification D ynam ic RAM high density m em ory module. The

CS5-02

Contextual Info: KMM332F204AT-L KMM332F224AT-L DRAM MODULE KMM332F204AT-L / KMM332F224AT-L Fast Page with EDOMode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V DESCRIPTIO N FEATURES The Samsung KMM332F20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The

KM416v1204at

Abstract: 416V1204 KM416V1204A
Contextual Info: 416V1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC tHPC 416V1204A-6/A-L6/A-F6 60ns 17ns 110ns 24ns 416V1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns 416V1204A-8/A-L8/A-F8