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    ic 4033

    Abstract: BT8960 TTC-4033
    Contextual Info: REV. S ta tu s PRELIMINARY 0 2 /23/00 MP HDSL transform er designed for use with Brooktree BT8960 chipset at 416Kbps rates A. Electrical Specifications @ 25° C 1. Primary (Line side) Impedance; 135Q 2. Secondary (IC side) Impedance; 32fi 3. Longitudinal Balance; 55dB TYP @ 104KHz, OdBm


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    bt8960416kbps104khz40khz+7320khz-70db10khz12/uh100khzic 4033ttc-4033 PDF

    Contextual Info: REV. S ta tu s PRELIMINARY 0 2 /23/00 MP HDSL transform er designed for use with Brooktree BT8960 chipset at 416Kbps rates A. Electrical Specifications @ 25° C 1. Primary (Line side) Impedance; 135Q 2. Secondary (IC side) Impedance; 32fi 3. Longitudinal Balance; 55dB TYP @ 104KHz, OdBm


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    bt8960416kbps104khz320kh+310khz100khz10c\a1123651 PDF

    IC SEM 2004

    Abstract: parabolic dish circuit diagram SEM 2004 WIT2410 RJ11 wire parabolic antenna SEM2410 ICES-003 24dBi spread spectrum data modem
    Contextual Info: SEM2410 /X /D /DX Wireless Ethernet Bridge User’s Guide Important Regulatory Information Cirronet Product FCC ID: HSW-2410 IC 4492A-2410 Note: This unit has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful


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    sem2410hsw-2410492a-2410m-2410-0018+9ic sem 2004parabolic dish circuit diagramsem 2004wit2410rj11 wireparabolic antennaices-00324dbispread spectrum data modem PDF

    THGBM2G7D4FBAI9

    Abstract: THGBM2G6D2FBAI9 THGBM2G8D8FBAIB THGBM THGBM2G6D thgbm2g9dbfbai2 THGBM2G THGBM2 20102Q 169ball
    Contextual Info: 1 eye 東芝半導体情報誌アイ 2010 年 1 月号 Volume 209 CONTENTS 新製品情報 業界で初めて17枚積層に成功し大容量化を実現 業界最大64ギガバイトの組込み式 NAND型フラッシュメモリ製品 2 経済性にも優れて、機械式リレーからの置き換えに最適


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    tlp173a32nmnandthgbm2g7d4fbai9thgbm2g6d2fbai9+8thgbm2g8d8fbaibthgbmthgbm2g6dthgbm2g9dbfbai2thgbm2gthgbm220102q169ball PDF

    Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance Line Side : L=3.5mH±10% @ 100KHz,50mV Leakage Inductance: L.k=12]iH MAX @ 100KHz,50mV DCR (Line Side): DCR(6-7)=DCR(»-9)=2.2 Ohms MAX @ 25°C DCR (Chip Side): DCR(2-4)=2.2 Ohms MAX @ 25°C DC Current Capability: 70mA


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    100khz40-320khz104khz416kbps+41500vrmstici115tekmagnetic5tmt60005cttmd00440 PDF

    PE-68650

    Abstract: PE-68622 datatronic FUSE T 160mA PT31101 PT31102 PT31103 PT31104 PT31106 5-196kHz
    Contextual Info: PT311 Series POT23/11 HDSL Broadband Transformers For Brooktree and Level One Chipsets • Designed to meet ANSI and ETSI requirement • Excellent THD performance • Matched to Brooktree and Level One chipsets • Maximum Height 0.50 inches 12.7mm •


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    pt311pot23/111500vrms70/75/160ma+151168kbpsca92858pt31101pe-69300epb5025ps102031pe-68650pe-68622datatronicfuse t 160mapt31102pt31103pt31104pt311065-196khz PDF

    telephone* -"transmission lines" awg attenuation

    Abstract: FDM 2B adsl psd mask PXI-1002 ADSL FILTER telephone hybrid AFE1302 NSA400 telephone* "transmission lines" awg attenuation hybrid telephone transformer
    Contextual Info: Application Report SBAA095 - August 2003 Evaluation Criteria for ADSL AFE1302 John Z. Wu and CR Teeple High Speed Products Marketing ABSTRACT This paper describes several important asymmetrical digital subscriber line ADSL AFE1302 evaluation criteria and design limitation factors, including the relationship between total


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    sbaa095afe1302telephone* -"transmission lines" awg attenuationfdm 2b+7adsl psd maskpxi-1002adsl filtertelephone hybridnsa400telephone* "transmission lines" awg attenuationhybrid telephone transformer PDF

    BT8952

    Abstract: HDSL 120 BT8960 PS102029 PS102030 PS102031 PS102032 PS102033 PS102034 PS102035
    Contextual Info: YCL HDSL Transformers ♦ Designed to meet ANSI and ETSI requirement ♦ Designed for Brooktree’s ICs ♦ Excellent longitudinal balance. ♦Isolation 1500Vrms Specification : Parts No PS102029 PS102030 PS102031 PS102032 PS102033 PS102034 PS102035 Parts No


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    1500vrmsps102029ps102030ps102031+8ps102032ps102033ps102034ps102035bt8952784kbpshdsl 120bt8960 PDF

    THGBM1G5D2EBAI7

    Abstract: THGBM1G8D8EBAI2 THGBM1G4D1EBAI7 THGBM THGVS4G5D2EBAI4 THGVS4G8D8EBAI2 169ball THGVS4G3D1EBAI8 THGBM1G6D4EBAI4 THGBM1G7D4EBAI2
    Contextual Info: 8 eye 東芝半導体情報誌アイ 2008 年 8 月号 Volume 192 CONTENTS 新製品情報 業界最大32ギガバイトの 組込み式NAND型フラッシュメモリ 2 5Mbpsロジック出力ICカプラ: TLP105/TLP108 3 パワーMOSFET U-MOS V-H MOSBDシリーズ:


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    tlp105/tlp108tpca8a04-htpc8a04-h32sda+11595typthgbm1g5d2ebai7thgbm1g8d8ebai2thgbm1g4d1ebai7thgbmthgvs4g5d2ebai4thgvs4g8d8ebai2169ballthgvs4g3d1ebai8thgbm1g6d4ebai4thgbm1g7d4ebai2 PDF

    mb86390

    Abstract: SAA7113 SAA7113 AN mb8639
    Contextual Info: MB86390A Parameter Specification Revision 2.2 12, December 2000 Copyright FUJITSU LIMITED ALL RIGHTS RESERVED MB86390A Parameter Specification Rev. 2.2 12, December 2000 FUJITSU LIMITED Proprietary and Confidential Information contained in this specification is subject to change without notice for improvement.


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    mb86390amb86390saa7113saa7113 an+1mb8639 PDF

    THGBM1G8D8EBAI2

    Abstract: THGBM1G4D1EBAI7 THGBM THGVS4G3D1EBAI8 THGBM1G TLP108 TLP105 THGBM1G7D4EBAI2 THGBM1G4D1EBAI THGBM1G5D2EBAI7
    Contextual Info: 8 eye 東芝半導体情報誌アイ 2008 年 8 月号 Volume 192 CONTENTS 新製品情報 業界最大32ギガバイトの 組込み式NAND型フラッシュメモリ 2 5Mbpsロジック出力ICカプラ: TLP105/TLP108 3 パワーMOSFET U-MOS V-H MOSBDシリーズ:


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    tlp105/tlp108tpca8a04-htpc8a04-h32sda+10thgbm1g8d8ebai2thgbm1g4d1ebai7thgbmthgvs4g3d1ebai8thgbm1gtlp108tlp105thgbm1g7d4ebai2thgbm1g4d1ebaithgbm1g5d2ebai7 PDF