4164-2 RAM Search Results

IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Contextual Info: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

4164 ram

Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Contextual Info: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)

4164-12

Abstract: NEC 4164 PD4164 4164-10 LPD416
Contextual Info: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

PEB 4165 T

Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Contextual Info: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15

Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)

dram 4164

Abstract: 74670 register 41256
Contextual Info: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

lm3364

Abstract: M5K4164NP-15 LM3364-15 LM3364-20 AM9064-15 M5K4164NS-15 IMS2600-15 A9064 C2164-15 M5K4164NP-20
Contextual Info: - 168 - X m % tt £ CC TRAC max ns) 6 4 K nMOS D y n a m i c + y :7' ft 'ft 'f (ns) TCAD rain (ns) TRCY TAH min (ns) TP nil) (ns) TWCY min (ns) TDH rain (ns) RAM (6 5 5 3 6 x 1 ) £ TRWC min (ns) V D D or V C C (V) A M I DD max <mA) I D D STANDBY (ISB/ISB2)

sense amplifier bitline memory device

Abstract: F4164 F4164-1 F4164-2 F4164-3
Contextual Info: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows

smd diode marking LM

Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
Contextual Info: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .

Contextual Info: DS 2257, DS 2257S PA LLA S SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at t* = 25°C tA = 25°C ìa = 60°C t* = 85°C

PEB 4165 T

Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Contextual Info: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,

Contextual Info: DS2257, DS2257S DALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR SO E D 2bl4130 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at lOjiAmaxat 00047TD

Contextual Info: R F RF2451 MICRO-DEVICES 3V LOW NOISE AMPLIFIER Typ ical A p plicatio ns • GSM Handsets • IF or RF Buffer Amplifiers • CDMA Handsets • Driver Stage for Power Amplifiers • TDMA Handsets • Oscillator Loop Amplifiers The RF2451 is a general purpose, low-cost, high perfor­

FZH115B

Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P

pc2101

Abstract: 91L01
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads

infineon c167 bare die

Abstract: ba 4614 4614 Ba 4164 ram bosch ac drive AN10 AN11 C166 C167CR SAK-C167CR-4RC
Contextual Info: Microcontrollers C166 Family 16-Bit Single-Chip Microcontroller C167CR-xC, Bare Die, Step GA Data Sheet 1999-11 Bare Die Delivery www.infineon.com C167CR-xC Step GA C167CR-xC Revision History: (Bare Die Delivery) 1999-11, Step GA Previous Versions: 1999-11

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

CV4164B

Abstract: date code body marking samsung 16x4 LCD module KS0070 16X4 LCD CHARACTER CODE 16X4 LCD cv4164b display 4164 ram 16 pin diagram of lcd display 16x4 yamaha ic
Contextual Info: CLOVER CHINA DISPLAY SHENZHEN LTD. 高 華 電 子 顯 示 (深 圳 )有 限 公 司 LCD MODULE SPECIFICATION Model : CV4164B - _ _ - _ _ - _ _ - _ 工廠: 郵編: 電話: 電郵: 網 址: Revision 02 Engineering Date Yamaha Yam 2003 年 9 月 25 日 Our Reference

UC1845

Abstract: UC284X
Contextual Info: y fM T E Q R A T E O C IR C U IT S U IM IT R O U C 1 84 2 /3 /4/5 U C 2 8 4 2 /3 /4/5 U C 3 8 4 2 /3 /4 /5 D E Current Mode PWM Controller DESCRIPTION The U C 1 8 4 2 /3 /4 /5 fa m ily of control ICs provides the necessary features to im ple m en t off-line or DC to DC fixed frequency c u rre n t m ode control schem es with a m inim al

TMS4500

Abstract: TMS4500A
Contextual Info: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock

tms4c1024

Abstract: TMS4C1024DJ
Contextual Info: fl1b].72S 007710G ^ • TM024HAC4 1,048,576 BY 4-BIT DYNAM IC RAM M ODULE — TEXAS INSTR • 1,048,576 x 4 Organization • Single 6-V Supply 10% Tolerance • 24-Pin Slngle-ln-llne Package (SIP) • Utilizes Four 1 Megabit Dynamic RAMs in Plastic Small-Outiine J-Lead (SOJ) Packages

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior