4164 RAM Search Results

IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Contextual Info: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability

4164 ram

Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
Contextual Info: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients

Z86C1200ZEM

Abstract: Z86E61 Z86E63
Contextual Info: Z86E61/E63 CPS DC-4164-03 Z86E61 AND Z86E63 CMOS Z8 OTP MICROCONTROLLER GENERAL DESCRIPTION The Z86E61 is a member of the Z8 ® single-chip microcontroller family with 16 Kbytes of EPROM and 236 bytes of general-purpose RAM and the Z86E63 has 32K bytes of EPROM.

LJ64

Contextual Info: LCD MODULE SPECIFICATION Model : MLCM4164B - - - Revision - 02 Engineering; Date 2003 Our Reference 4164 9 p 25 B MODE OF DISPLAY Display m ode Display condition Viewing direction □ TN positive □ TW negative STN : □ Yellow green □ Grey Lj Blue negative

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

TMS4164A

Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)

Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)

4164 ram

Abstract: RAM 4164 schemat
Contextual Info: RAS I Î CAS f t 64 A0/A7 A l/AS >* M A2/A9 } Butor «tzekoiüw Jj j ' « I A3 /AtO A4/A11 A5/A12 A6/A13 WzmacrMocz oòczytu -X a 128 — i 54 RAM n t64wiersze * 128 kotumnf 128 Bufar wyjéaowy I Ocfcoder koiumn 12128 WR Î J Rys. 1.37. Schemat blokowy ukiadu pamiçci 64 Kbit (typ 4164)

sense amplifier bitline memory device

Abstract: F4164 F4164-1 F4164-2 F4164-3
Contextual Info: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows

PEB 4165 T

Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Contextual Info: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15

MK4164-15

Abstract: mostek MK4164 MK4116 MK4164 MK4096 MK4164-12 MK4516 MK4096 ram mostek system development board MK-4096
Contextual Info: MOSTEK 65,536 x 1 -BIT DYNAMIC RAM M K 4164 N /E -12/15 FEATURES n C o m m o n I / O c a p a b ility u s in g " e a r ly w r i t e " □ R e c o g n iz e d in d u s tr y s ta n d a r d 1 6 -p in c o n fig u r a tio n □ R ead, W r ite , fro m M o s te k

smd diode marking LM

Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
Contextual Info: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

LM 4138

Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Contextual Info: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,

4164-12

Abstract: NEC 4164 PD4164 4164-10 LPD416
Contextual Info: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

dram 4164

Abstract: 74670 register 41256
Contextual Info: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks

AN-3004

Abstract: valve control example l1.2 Multivibrator 555
Contextual Info: BACK AN3004 sames AN3004 APPLICATION NOTE SA9202 PORT EXPANDER The SA9202 family of port expanders may be used in a variety of applications in industries ranging from agricultural to food processing or telecommunications. This application note describes how the SA9202 could be applied in a typical industrial control system.

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

lm3364

Abstract: M5K4164NP-15 LM3364-15 LM3364-20 AM9064-15 M5K4164NS-15 IMS2600-15 A9064 C2164-15 M5K4164NP-20
Contextual Info: - 168 - X m % tt £ CC TRAC max ns) 6 4 K nMOS D y n a m i c + y :7' ft 'ft 'f (ns) TCAD rain (ns) TRCY TAH min (ns) TP nil) (ns) TWCY min (ns) TDH rain (ns) RAM (6 5 5 3 6 x 1 ) £ TRWC min (ns) V D D or V C C (V) A M I DD max <mA) I D D STANDBY (ISB/ISB2)

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface

ARM92EJ-S

Abstract: 2BPP 581k embedded projects
Contextual Info: C/ GUI TM Embedded Graphical User Interface μC/GUI Embedded Graphical User Interface™ DESCRIPTION μC/GUI is universal graphical software for embedded applications that provides an efficient processor and LCD controller-independent GUI to applications using a graphical LCD. Designed for single and

PEB3465

Abstract: PEB 4165 T PEB31665 dcnc PEB 4166 T P-MQFP-80-1 smd marking KH PEB31664 PEB31666 PEB4164
Contextual Info: Dat a Sh eet , DS1 , Ju ly 20 00 QAP Q u a d A n a lo g P O TS PEB 3465 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-07-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

4164 ram

Abstract: lh521008
Contextual Info: CMOS 128K x 8 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinout • High Density 32-Pin, 400-mil SOJ Package • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • 2 V Data Retention

150TYP

Contextual Info: DS2257, DS 2257S DALLAS SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A12 C C A7 Z A14 • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at tA = 25°C tA = 25°C tA = 60°C