4147 Search Results

Contextual Info: This document was generated on 01/23/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 68801-4147 Active Pico-EZmate -to-Pigtail cable assembly, 4 Circuits, 28AWG pigtails, stripped, Cable Length 0.305m Documents:

Contextual Info: This document was generated on 05/30/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 68801-4147 Active Pico-EZmate -to-Pigtail cable assembly, 4 Circuits, 28AWG pigtails, stripped, Cable Length 0.305m Documents:

Contextual Info: This document was generated on 06/22/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75235-4147 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 4-Pair GbX® Backplane Connector System, Right Guide

RCD snubber

Abstract: snubber circuit for mosfet RCD snubber mosfet design AN-4147 flyback snubber snubber capacitor for low frequency flyback switching snubber design flyback snubber design FSDM311 RCD snubber design
Contextual Info: www.fairchildsemi.com Application Note AN-4147 Design Guidelines for RCD Snubber of Flyback Converters Abstract This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor Llk of the main transformer and the output capacitor (COSS) of the MOSFET. The

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DWN DATE REV PER 0G3H— 0 0 5 1 — 04 23FEB04 APVD JR MS D D B B CDLDR CDDED GREY ACTIVE L2-4147

AT-41470

Abstract: NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

Contextual Info: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41470 F eatures • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

diode a4W

Abstract: zener 4147 ringing tip ring pots telephone 90v 48v ZENER DIODE t2 Adjustable Power Supply Schematic Diagram 40vdc NTE cross TIP 34 pnp spdt 12v 150 OHM relay datasheet 5vdc, 150ma power relay a4w 41
Contextual Info: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL File Number 4147.2 Features • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS, 3 REN Capability at 44VRMS he HC5517 is a ringing SLIC designed to accommodate a wide variety of local loop applications. The various applications

AN9607

Abstract: HC5517 Adjustable Power Supply Schematic Diagram 40vdc
Contextual Info: NS ESIG D W TM R NE UCT D FO E PROD E D MEN ITUT 5186 COM SUBST 85, HC5 E R 551 NOT SSIBLE ,Data 1 HC Sheet 7 PO 1 5 HC5 3 REN Ringing SLIC For ISDN Modem/TA and WLL 4147.3 • Sinusoidal Ringing Capability • DI Process Provides Substrate Latch Up Immunity when

AT-41472

Contextual Info: AT-41472 Up to 1 GHz Low Noise ' Silicon Bipolar Transistor warn HEWLETT mLtiM PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz 10.0 dB typical at 1.0 GHz

DL-4147-162

Abstract: TE 2161 DL-4147
Contextual Info: RED LASER DIODE DL-4147-162 Ver.1 Mar. 2002 Features Package • Wavelength : 650 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 10 mW at 70°C • TE mode Tolerance : ± 0.2 (Unit : mm) ø5.6 - 0.025 ø4.4 ø3.55± 0.1

DL-4147

Abstract: DL-4147-062 TE 2161
Contextual Info: RED LASER DIODE DL-4147-062 Ver.1 Jun. 2002 Features Package • Wavelength : 650 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 10 mW at 70°C • TE mode Tolerance : ± 0.2 (Unit : mm) ø5.6 - 0.025 ø4.4 ø3.55± 0.1

Contextual Info: 41472 Product Details - Tyco Electronics Page 1 of 2 Electronic Components | Segments | Who We Are Corporate Home | Worldwide Search Products Documentation Resources My Account Customer Support 41472 Product Details Ring and Spade Tongue Terminals Always EU RoHS/ELV Compliant Statement of

at-41470

Abstract: Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

Contextual Info: 41471 Product Details - Tyco Electronics Electronic Components | Segments | Who We Are Corporate Home | Products Page 1 of 2 Documentation Resources My Account Customer Support 41471 Product Details Ring and Spade Tongue Terminals Always EU RoHS/ELV Compliant Statement of

IEC 60068-2-61

Contextual Info: IMS CONNECTOR SYSTEMS GmbH Obere Hauptstrasse 30 D-79843 Löffingen Postfach 1141 D-79840 Löffingen Product data sheet Tel +49 7654 901-0 Fax (+49) 7654 901-199 Net: www.imscs.com E-mail: sales@imscs.com Part Number: 4147.93.8914.1´´ Revision: Date: Signature:

Contextual Info: This document was generated on 08/13/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 46557-4147 Active SEARAY* 1.27mm by 1.27mm Pitch SEARAY* Slim Receptacle, 160 Circuits, 5.00mm Unmated Height, 4 Rows, with Pegs, Solder Charge Tin-Lead

transistor C55 7B

Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126
Contextual Info: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the

Contextual Info: 8 2004 F /- S T 0 d N umerical Product * Loose piece p a rt available. See page 51 fo r p a rt number. SO Port No. 41143 41194 41202* 41274* 41290 41291 41292 41339 41370 41399 41411 41412* 41449* 41450* 41478 41480 41481 41482 41484 41509 41531 41532* 41617

Contextual Info: DWG NO. REV SH C— 496— 5000— 500 ZONE BY 25398 26874 NEW RELEASE TO PRODUCTION 28303 ORACLE MATCH 08/03/99 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7. SE E SCR 33149 ADDED NOTE 7, SE E SCR 1/2/01 41476 ADDED VHDM L -SE R IE S 3/26/03 CORRECTED DET V SHT. 3

Contextual Info: AVANTEK INC 50E D O a v a n tg k lm n tb AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • 0G0b47s s Low Noise Figure: 1 .3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz

DL-4147-062

Contextual Info: Ordering number : ENN7566 Red Laser Diode DL-4147-062 DL-4147-062 Red Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm • Wavelength : 650 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 10 mW at 70°C

AT-41472

Abstract: Avantek amplifier 8 12 GHz AVANTEK transistor AT41472 avantek T-31-21 Avantek, Inc AT414 AVANTEK oscillator
Contextual Info: 50E D AVANTEK INC AVANTEK •limitfa Q0Gb47S S AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz

Contextual Info: Datasheet Crimp Housings 22-02-4147 2.50mm .098" Pitch Board-In Crimp Housing, For 5394 Terminal, 14 Circuits Status Circuits / Positions Pitch / Center Spacing Rows Product Name Gender Wire Entry Angle Contact Molex 14 2.50mm (.098") 1 Board-In Male Vertical