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    Vishay Intertechnologies GBS307D04129KLX000

    Resistor Wirewound 1.2 Ohm 10% 250W 650ppm/K to 750ppm/K Loose Pack - Bulk (Alt: GBS307D04129KLX000)
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    Avnet Americas GBS307D04129KLX000 Bulk 10 Weeks 5
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    • 10 $144.65
    • 100 $92.73
    • 1000 $69.26
    • 10000 $68.49
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    Vishay Intertechnologies ZBS309614129KLX000

    Resistor Wirewound 1.2 Ohm 10% 300W 650ppm/K to 750ppm/K Loose Pack - Bulk (Alt: ZBS309614129KLX000)
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    Avnet Americas ZBS309614129KLX000 Bulk 8 Weeks 5
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    • 10 $127.79
    • 100 $117.47
    • 1000 $116.29
    • 10000 $115.69
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    Mouser Electronics ZBS309614129KLX000
    • 1 $156.50
    • 10 $127.79
    • 100 $118.66
    • 1000 $118.66
    • 10000 $118.66
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    Vishay Intertechnologies GBS309604129KLX000

    GBS30/330 10 1R2 10% - Bulk (Alt: GBS309604129KLX000)
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    Avnet Americas GBS309604129KLX000 Bulk 10 Weeks 5
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    • 10 $185.11
    • 100 $118.67
    • 1000 $88.64
    • 10000 $87.65
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    VPG Foil Resistors Y0024129K064S9L

    High Precision Resistor Metal Foil 129.064kOhm 0.001% Bulk - Bulk (Alt: Y0024129K064S9L)
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    Avnet Americas Y0024129K064S9L Bulk 20 Weeks 25
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    • 100 $131.08
    • 1000 $113.83
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    Vishay Intertechnologies ZBS309604129KLX000

    Resistor Wirewound 1.2 Ohm 10% 300W 650ppm/K to 750ppm/K Loose Pack - Bulk (Alt: ZBS309604129KLX000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ZBS309604129KLX000 Bulk 8 Weeks 5
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    • 10 $137.80
    • 100 $126.68
    • 1000 $125.40
    • 10000 $124.76
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    Mouser Electronics ZBS309604129KLX000
    • 1 $168.96
    • 10 $137.80
    • 100 $127.96
    • 1000 $127.96
    • 10000 $127.96
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    4129K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    89C51CC01UA

    Abstract: 89C51CC01CA 89C51CC01UA-UM 89C51CC01 89C51CC01CA-UM 89C51CC01UA-IM VQFP44 80C51 AT89C51CC01 PLCC44
    Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip XRAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Erase/Write Cycle: 100K


    Original
    80c5114-sources16-bit4129l+989c51cc01ua89c51cc01ca89c51cc01ua-um89c51cc0189c51cc01ca-um89c51cc01ua-imvqfp44at89c51cc01plcc44 PDF

    E327436

    Abstract: 3000K 3 step MacAdam Luxeon s JESD22-A114E
    Contextual Info: LUXEON S1000 Optimized solution for applications requiring high flux and tight beam control Technical Datasheet DS80 LUXEON S1000 High Flux Density Product Introduction The LUXEON S1000 emitters deliver uniform beam intensity and high flux density from a uniform source.


    Original
    s1000e3274363000k3 step macadam+2luxeon sjesd22-a114e PDF

    89C51CC01UA-UM

    Abstract: 89C51CC01CA-UM at89c51cc01ca 89C51CC01UA AT89C51CC01CA-RLTUM DSA0087638 plcc44 TRAY AT89C51CC01UA-RLTUM AT89C51CC01U at89c51cc01ua
    Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip XRAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Erase/Write Cycle: 100K


    Original
    80c5114-sources16-bit21-bit+114129m89c51cc01ua-um89c51cc01ca-umat89c51cc01ca89c51cc01uaat89c51cc01ca-rltumdsa0087638plcc44 trayat89c51cc01ua-rltumat89c51cc01uat89c51cc01ua PDF

    Contextual Info: LUXEON S1000 High Flux Density Product Introduction The LUXEON S1000 emitters deliver uniform beam intensity and high flux density from a uniform source. This enables tight beam control at the system level using secondary optics to provide the high center beam intensity, uniform beam and crisp, single shadow required for high performance accent


    Original
    s1000 PDF

    Contextual Info: LUXEON฀฀S1000 High฀Flux฀Density฀Product Introduction ฀ ฀


    Original
    s1000 PDF

    89C51CC01UA-UM

    Abstract: AT89C51CC01UA-RLTUM 89C51CC01CA-UM 89C51CC01UA 89C51CC01CA AT89C51CC01CA-SLSUM AT89C51CC01UA AT89C51CC01UA-SLSUM at89c51cc0 80C51
    Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip XRAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Erase/Write Cycle: 100K


    Original
    80c5114-sources16-bit4129n+989c51cc01ua-umat89c51cc01ua-rltum89c51cc01ca-um89c51cc01ua89c51cc01caat89c51cc01ca-slsumat89c51cc01uaat89c51cc01ua-slsumat89c51cc0 PDF

    Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip XRAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Erase/Write Cycle: 100K


    Original
    80c5114-sources16-bit4129n PDF

    80C51

    Abstract: PLCC44 T89C51CC01 VQFP44
    Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip XRAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Erase/Write Cycle: 100K


    Original
    80c5114-sources16-bit4129k+3plcc44t89c51cc01vqfp44 PDF