41256
Abstract: BIOS and Kernel Developer’s Guide (BKDG) For AMD Family 11h Processors Socket S1g2 Processor Functional Data Sheet SBI Temperature Sensor Interface (SB-TSI) SBI Temperature Sensor Interface SB-TSI AMD 40821 Socket S1g2 Processor Functional 40821 APIC21 Socket S1g2 Processor
Contextual Info: 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG Cover page BIOS and Kernel Developer’s Guide BKDG For AMD Family 11h Processors Advanced Micro Devices 1 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG 2005–2008 Advanced Micro Devices, Inc. All rights reserved.
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41256bios and kernel developer’s guide (bkdg) for amd family 11h processorssocket s1g2 processor functional data sheetsbi temperature sensor interface (sb-tsi+6sbi temperature sensor interface sb-tsiamd 40821socket s1g2 processor functional40821apic21socket s1g2 processor
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D41256
Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
Contextual Info: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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M41256A
Abstract: 41256A
Contextual Info: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications
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41256
Abstract: 41256 dram 41256 ram Siemens HYB 41256-12 41256-12 dram 41256 MEMORY 41256-15
Contextual Info: SIEM EN S 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 1 0 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)
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144-bitq67100-q380q67100-q346q67100-q347+74125641256 dram41256 ramsiemens hyb 41256-1241256-12 dram41256 memory41256-15
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41256
Abstract: 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511
Contextual Info: S IE M E N S 262,144-Bit Dynamic RAM HYB 41256-10/-12/-15 • 262,144 x 1-bit organization • Industry standard 16 pins • Single + 5 V supply, ± 10 % tolerance • Low power dissipation: - 358 mW active max. - 28 mW standby (max.) • 100 ns access time
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144-bitq67100-q380q67100-q346q67100-q347+104125641256-1541256 ramsiemens hyb 41256-1241256 dram41256-1241256-12 dram41256-1041256 memoryc511
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41256
Abstract: Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram
Contextual Info: SIEMENS 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 10 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)
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41256 dram
Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
Contextual Info: M A C R O NIX INC 34E D • 5bûûôô5 0QQQ177 b • 'T : 7 7 - I3 MX8012 PRELIMINARY m FEATURES GENERAL DESCRIPTIONS • Adaptive Delta Modulation is used. • Variable speech length con trolled by STOP input. • Direct drive of 41256 or 411024. • Internal power up reset.
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0qqq177mx8012000sq41256 dram+54125641256 ram41256 memorycontinuously variable slope delta modulatormx8003
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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Paradigm 41256
Abstract: 41256 ram PDM41256 PDM41256SA
Contextual Info: PARADIGM 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 , 20 and 25ns M il: 1 2 ,1 5 , 20, 25, 35, 45, and 55ns □ Low pow er operation - PDM 41256SA Active: 400m W typ. Standby: 150 m W (typ.)
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pdm41256sapdm41256la400mw350mw+5mil-std-883pdm41256designer41256saparadigm 4125641256 ram
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Paradigm 41256
Abstract: 41256 PDM41256 PPM41256LA paradigm pdm41256sa 41256l
Contextual Info: PDM41256SA PDM41256LA Paradigm 256K Static RAM 32K x 8-Bit Features Description U High speed access times Com'l: 8,10,12,15, 20 and 25 ns Ind'l: 10,12,15, 20, and 25 ns The PDM41256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. This product is
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Contextual Info: PARADIGM 256K Static RAM 32K x 8-Bit PDM 41256SA PDM 41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 25, 35,45, and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)
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41256sa41256lapdm41256sa400mw+4pdm41256la350mwmil-std883pdm41256
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41464 dram
Abstract: 41464 64k DRAM 514256 41256 ram M 41464
Contextual Info: Pu t H n u System T ech n o lo gy Nu m b er in g MSA: Linear IC m m MSI.: Bipolar 1C : Mtiliiplc k ; MSM: m o s k ; D RAM M o d ule B y t e w id e D R A M B a s e d R e v is io n Lo w Po w er MSC Device Type | 23 B 109 B L - Device Identifier Speed 11 Package Type
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dram 4164
Abstract: 74670 register 41256
Contextual Info: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks
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um82c08882c8482c8882c37+682c5982c5382c55dram 416474670 register41256
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N341256
Abstract: N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15
Contextual Info: CMOS SRAM Jw NKK N341256 256K-BIT 32KX8 • Features • CMOS SRAM organized as 32,768 x Sbits • Single +5.0V(+10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation Active : 180mA(max.) 28pin Plastic DIP(300m il) Standby : 60m A(m ax.)
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Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a
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NEC IC D 553 C
Abstract: D41256 41256
Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module W NEC Electronics Inc. Description Pin Configuration T h e M C -4 1 2 5 6 A 9 is a 262,144-w ord by 9-bit DRAM m o d ule desig ned to o p e ra te from a single + 5-volt po w er 30-Pin SIMM supply. A d v an c ed d y n am ic N M O S circuitry, including a
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Contextual Info: Paradigm' b^lDID PDM41256SA PDM41256LA OOGQBb? TE4 S P A T 256K Static RAM 32K x 8-Bit Features Description □ High speed access times Com'l: 10,12,15,20 and 25ns Ind'l: 10,12,15,20, and 25ns M il: 12,15,20,25, and 35ns The PDM41256 is a high performance CMOS static
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nec 424256
Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Contextual Info: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power
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mc-42512a36-424512a3636-bitmc-424512a36+9mc-424s12a36wf-424512anec 42425642425641256 dram4225641256424256 pin out424256 memory
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nec 424256
Abstract: 424256 memory 424256 424256 pin out 424256 nec
Contextual Info: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits
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mc-42512a36mc-424512a36-424512a36mc-424s12a+636bh/fhnec 424256424256 memory424256424256 pin out424256 nec
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FZH115B
Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P
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74integratedline-to-10150ns16-dil+1318-pin250ns300nsfzh115bfzh261fzk105fzh131fzj111fzh115fzh205multiplexer ic 74151fzh265b74ls104
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80387SX
Abstract: 41256 41256 dram 88C215 ibm at motherboard 80286 80386SX 511000 dram 88C212 88c211 80286 pin configuration
Contextual Info: SYSL06IC TECHNOLOGY CORP 24E D M &Ö14540 ODOOOOl 4 • ~ 7 ^ 5 ä '3 3 Solutions - o / glfiUKìll TdOWMilY ©©BP, Chip Set \V 88C286 SUPER ENHANCED CHIP SET The 88C286 is an enhanced PC/AT compatible chip set which is a highly integrated VLSI implementation of the control logic used in the
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Contextual Info: PA R A D I G M TECHNOLOGY PARADËM" INC SGE b*JmO*lG 0000123 1 D 256K Static RAM 32K x 8-Bit IPAT PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 , 25, 35,4 5 , and 55ns □ Low power operation
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Contextual Info: Paradigm 256K Static RAM 32K x 8-Bit PDM41256SA PDM41256LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41256SA Active: 400mW typ. Standby: 150 mW (typ.)
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Contextual Info: PARADIGM TECHNOLOGY INC PARADIGM H'lE D feTMlO^O 0000Q33 0 256K Static RAM 32K x 8-Bit PDM 41256S PDM 41256L Features Description □ High speed access times Com'l: 1 5 ,1 7 ,2 0 ,2 5 ,3 5 and 45ns M il: 2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation
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