40V 14A DPAK Search Results

FDD8447L

Abstract: fdd*8447l fdd8447 50a 30v 8.5m MOSFET
Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

Contextual Info: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description ̈ Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer

Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

FDD4243

Abstract: FDD*4243
Contextual Info: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description „ Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer

fdd*8447l

Abstract: fdd8447 FDD8447L inverter 12 V to 32v dc 40V 14A DPAK
Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

fdd*8447l

Abstract: FDD8447L fdd8447
Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description „ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

FDD4243

Contextual Info: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description „ Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer

FDD8447L

Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
Contextual Info: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description „ Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer

FDD8447L

Abstract: fdd*8447l fdd8447
Contextual Info: FDD8447L N-Channel PowerTrench MOSFET 40V, 54A, 8.5mO General Description Features This N-Channel MOSFET has been produced using „ Max rDS on = 8.5 mΩ at VGS = 10V, ID = 14A Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss

fdd*8447l

Abstract: fdd8447l
Contextual Info: FDD8447L N-Channel PowerTrench MOSFET 40V, 54A, 8.5mO General Description Features This N-Channel MOSFET has been produced using „ Max rDS on = 8.5 mΩ at VGS = 10V, ID = 14A Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss

FDD8447L

Abstract: FDD8447L-F085 fdd*8447l N-Channel 40V MOSFET FDD8447
Contextual Info: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications „ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A „ Inverter „ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A „ Power Supplies „ Fast Switching „ Automotive Engine Control

Contextual Info: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications ̈ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A ̈ Inverter ̈ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ̈ Power Supplies ̈ Fast Switching ̈ Automotive Engine Control

40V 14A DPAK

Abstract: 40V 60A MOSFET MDD1751 TO-252 N-channel MOSFET
Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 60A @VGS = 10V

MDD1752

Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability

BTS735N1

Abstract: TOP209P ST VIPER 20A bts735 KA1M0680 top210pfi tny255p TOP209PFI TOP223P KA1M0565R
Contextual Info: Cross Reference Guide April 2000 Switch Mode Power Supplies Competition ST nearest ST advanced features KA1H0165R VIPer20 1• VIPer in PENTAWATT H.V., PowerSO-10 & DIP-8 KA1H0265R VIPer50 1• VIPer in PENTAWATT H.V. & PowerSO-10; 2• Ron= 5Ω VIPer50 ; Ron= 6Ω (KA1H0265);

Contextual Info: AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along

054N40

Abstract: KMB054N40 semiconductor 054n40 KMB054N40D kmb054n40dB
Contextual Info: SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power

kmb054n40da

Abstract: KMB054N40 054n40 semiconductor 054n40 semiconductor KMB 054N40 054n40 da
Contextual Info: SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power

KMB054N40

Abstract: 054N40 semiconductor 054n40 KMB054N40DC KMB054N40D 40V 14A DPAK *054n40 kmb-054n40
Contextual Info: SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power

Contextual Info: IRLR/U130A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 JA(Max. @ VDS = 100V Lower RDS<oN) : 0.101 ilfly p .)

Contextual Info: Advanced IRFR/U1 3 0 A Power MOSFET FEATURES B V DSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ^ D S o n = lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10 nA (Max.) @ V DS= 1 0 0 V

Contextual Info: A d van ced Power MOSFET IR L R /U 1 3 0 A FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK

Contextual Info: IRLR/U130A A d vanced Power MOSFET FEATURES BVDSS — 100 V ♦ Avalanche Rugged Technology 0.1 2Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V