40P4 Search Results

WFS3-40P415

Abstract: Model 171
Contextual Info: Fork sensors WFS WFS3-40P415 www.mysick.com ONLINE DATA SHEET Fork sensors WFS Model Name Part No. > WFS3-40P415 > 6043919 At a glance • Optimized housing with slim fork shape • Dynamic teach-in via external teach or control panel and manual fine adjustment

Contextual Info: 40P4281 /H D 40P42161— -U n d e r D evelopm ent- Description The 40P4281/40P42161 are 4-bit single chip m icrocom puters w hich can m ount a standard EPROM 2764/27128 for program memory. The 40P4281 is pin-com patible w ith th e m ask ROM type HMCS424, b u t has som e

JEDEC 600Mil dip

Abstract: DIP40 package
Contextual Info: 40P4 Plastic 40pin 600mil DIP JEDEC Code – Weight g 5.4 Lead Material Alloy 42 21 1 20 E 40 e1 c EIAJ Package Code DIP40-P-600-2.54 Symbol L A1 A A2 D SEATING PLANE e b1 b A A1 A2 b b1 c D E e e1 L Dimension in Millimeters Min Nom Max – – 5.5 0.51 –

40P4B

Contextual Info: 40P4B Plastic 40pin 600mil SDIP JEDEC Code – Lead Material Alloy 42 21 1 20 E 40 e1 c EIAJ Package Code SDIP40-P-600-1.78 Weight g 4.1 Symbol L A1 A A2 D e SEATING PLANE b1 b A A1 A2 b b1 c D E e e1 L Dimension in Millimeters Min Nom Max – – 5.5 0.51

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

SL10100

Abstract: SL80
Contextual Info: O K I Semiconductor M S M 5 1 V 4 2 6 0 /S L _ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V4260/SL is a 262,144-word x 16-bit d ynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 51V4260/SL achieves high integration, high-speed operation, and lowpow er consum ption due to qu adruple polysilicon single m etal C M O S . The M SM 51V4260/SL is

ERF-150WJ401

Abstract: ERF-150WJ201 VZA40P7BAA ERF-150WJ301 ERF-150WJ751 A1000-FIV3010-SE A1000-FEV2102-RE A1000-FIV3010-RE a1000-cavpc232-ee A1000-REV00K4100-IE
Contextual Info: VZ V1000 More performance & Quality in less space • • • • • • • • • • • • • Current vector control High starting torque 200% / 0.5 Hz 1:100 speed control range Double rating ND 120%/1min and HD 150%/1 min IM&PM motor control Online Tuning

CIMR-J7AZ40P7

Abstract: CIMR-J7AZ CIMR-J7AZ20P7 CIMR-J7AZ41P5 CIMR-J7AZB1P5 CIMR-J7AZ20P4 CIMR-J7AZ40P4 omron VS MINI J7 CIMR-J7AZ42P2 CIMR-J7AZ22P2
Contextual Info: Cat. No. I63E-RU-01 VS mini J7 Компактный Регулятор частоты общего назначения РУКОВОДСТВО ПОЛЬЗОВАТЕЛЯ POCCИЯ Прeдcтaвитeльcтвo Oмpoн Элeктрoникc 123557, Poccия, Mocквa,

Contextual Info: a >i MITSUBISHI MICROCOMPUTERS M37736EHLXXXHP PROM VERSION OF M37736MHLXXXHP DESCRIPTION •Instruction execution time The M37736EHLXXXHP is a single-chip microcomputer using the The fastest instruction at 12 MHz frequency. 333 ns 7700 Family core. This single-chip microcomputer has a CPU and a

MSM548263

Abstract: SOJ40 TFSC
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TOSHIBA TC58V64FT/DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E 2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

TH58V128FT

Contextual Info: T O S H IB A TH58V128FT TENTATIVE TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 128 M b it 16 M X 8 bit C M O S N A N D E2PR O M DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 32 pages X 1024 blocks.

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT SILICON GATE C M O S 2, 64-MBIT 8M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND "E2PRQM) organized as 528 bytes X 16 pages X 1024 blocks.

D78323LP

Abstract: IC-8314 47 16L xn cs1m MSC 5511 tj1k IRKT 132 pd78312 mcl sbl 1 t002 94-0
Contextual Info: Mos M O S In te g ra te d C irc u it PD78323,78324 1 6 / 8 f c i- y //PD78324 l ì , b • '> > 7 7 ” - — 9 ¡S'i'4f£l6 fcf -y h CPU £ \HM L tz 16/8 tf >y h • v > U —XCO l o t t o « M > S î7 ^ P D 7 3 3 2 2 d it'" * , -y 7° • f tS M "E U ^ « S r ^ ï C l M

MSM5416125A

Contextual Info: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon

30R-JMCS-G-TF

Abstract: 30P30
Contextual Info: Emboss Tape JMC CONNECTOR 0.5mm pitch/Board-to-board connectors • Secure mating • Distortion preventive construction • Versatile number of circuit and height • Absorbing misalignment when mating connector Specifications –––––––––––––––––––

30R-JMCS-G-TF

Abstract: 60RF-JMCS-G-1B-TF 50p7.5-JMCS-G-B-TF 40P9 20RF-JMCS-G-1B-TF
Contextual Info: Emboss Tape JMC CONNECTOR 0.5mm pitch/Board-to-board connectors • Secure mating • Distortion preventive construction • Versatile number of circuit and height • Absorbing misalignment when mating connector Specifications –––––––––––––––––––

60RF-JMCS-G-1B-TF

Abstract: 40p50
Contextual Info: Emboss Tape JMC CONNECTOR 0.5mm pitch/Board-to-board connectors • Secure mating • Distortion preventive construction • Versatile number of circuit and height • Absorbing misalignment when mating connector Specifications –––––––––––––––––––

m5m82c55AP-2

Abstract: M5M82C55AFP2 M5M82C55AFP-2 m5m82c55ap2 82c55AP M5M82C55AP M5M82C55 82C55AP-2
Contextual Info: M ITSU B ISH I LSI* M 5M 82C55AP-2/FP-2/J-2 C M O S P R O G R A M M A B L E P E R I P H E R A L IN T E R F A C E DESCRIPTION T he M 5 M 8 2 C 5 5 A P -2 is a fam ily of g en eral-p u rp o se p ro g ­ PIN CONFIGURATION TOP VIEW ram m able input/ output d e v ic e s d e s ig n e d for use with the

ed53

Contextual Info: MITSUBISHI LS Is M5M27C202P,FP,J,VP,RV-12,-15 2097152-BIT 131Û72-WORD BY 16-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M27C202P,FP,J,VP,RV are high-speed 2 0 9 7 1 5 2 -bit one time programmable read only memories. They are suitable for microprocessor programming applications

M5L8212P

Abstract: m5l8212 S7Z1
Contextual Info: DESCRIPTION The M5L8257P-5 is a programmable 4-channel direct mem­ ory access D M A controller. It is produced using the Nchannel silicon-gate E D -M O S process and is specifically designed to simplify data transfer at high speeds for micro­ computer systems.

m5m27c102

Contextual Info: M5M27C102P,FP,J,VP,RV-15 1048576-BIT 65536-W 0RD BY 16-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T he M itsu b ish i M 5 M 2 7 C 1 0 2 P , F P, J, V P , R V -1 5 are hig h ­ speed 1 0 4 8 5 7 6 -b it one tim e p rog ram m ab le read o n ly m em ­

MSM548263

Abstract: SPQ1
Contextual Info: O K I Semiconductor MSM548263 262,144-Word x 8-Bit Multiport DRAM DESCRIPTION The MSM548263 is a 2-M bit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM and a 512-vvord by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.