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    smd DIODE 3FS

    Abstract: IXGH40N30BD 40N30
    Contextual Info: □ IXYS HiPerFAST IGBT IXGH40N30BD1 40N30BD1S V CES ^C25 V C E sat 300 V 60 A 2.4 V 75 ns Preliminary data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20


    OCR Scan     		ixgh40n30bd1ixgh40n30bd1s13/10nm/lbo-247+4cha55smd diode 3fsixgh40n30bd40n30 PDF

    40N30BD1

    Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o


    OCR Scan     		ixgh40n30bd1ixgh40n30bd1so-247smd40n30bd1s+3o-247360vtj40n30bd1 PDF