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    40N120IHL Search Results

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    onsemi

    onsemi NGTB40N120IHLWG

    IGBT TRENCH FS 1200V 80A TO-247
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    40N120IHL Datasheets Context Search

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    NGTB40N120IHLWG

    Abstract: 40N120IHL BIPOLAR TRANSISTOR
    Contextual Info: 40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120IHLWG NGTB40N120IHLW/D 40N120IHL BIPOLAR TRANSISTOR PDF

    Contextual Info: 40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120IHLWG NGTB40N120IHLW/D PDF