40MMH Search Results

Contextual Info: SIDE FLANGE 36mm HOLE SPACING FACE DIMENSIONS PANEL CUT-OUTS CROSS FLANGE 42R02-2 SIDE FLANGE (40mmhole spacing) 42R02-4 W/O COUNTERSUNK mounting holes ( 3 *0 IEC CONNECTORS - 5) m 1.16 - (29.5) BOTTOM FLANGE - -:- - ? .79*.008 . k- *0.2) ^

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

AN562

Abstract: SD1565
Contextual Info: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).

AFY12

Abstract: OC 140 germanium transistor 103MHZ Germanium Transistor FLR12 611b transistor
Contextual Info: AFY12 PNP Mesa transistor for RF-application up to 260 MHz The A F Y 12 is a germanium P N P RF mesa transistor for general high-frequency use in a case 18 A 4 D IN 41 876 TO-72 . The terminals are electrically insulated from the case. The A F Y 12 is designed for use in pre-stages, mixer stages and oscillator

TRANSISTOR 7059

Abstract: AN562 SD1565
Contextual Info: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).