40KMB Search Results

Contextual Info: CY7C277 '# C Y P R E S S Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 30-ns address set-up — 15-ns dock to output • Low power — 660 mW commercial — 715 mW (military) • Programmable address latch enable

CY7C235-30PC

Abstract: 38-00003-E C235 CY7C235 C235 equivalent V11-P CY7C235-30DMB motorola 28pin smd control board CY7C235-30JC
Contextual Info: CYPRESS SEMICONDUCTOR bSE SSö^bbE J> QülülSb 45 b « C Y P CY7C235 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • Highspeed — 25 ns max set-up — 12 ns clock to output • Low power — 495 mW commercial •— 660 mW (military) • Synchronous and asynchronous

Contextual Info: CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 W" ‘ *K- CYPRESS SEMICONDUCTOR Features • 512 x 9,1,024 x 9,2,048 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 33.3-MHz read/write independent of depth/width

Contextual Info: CY7C235 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • High speed — 25 ns max set-up — 1 2 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous output enables • On-chip edge-triggered registers

Contextual Info: CY7C432 CY7C433 CYPRESS SEMICONDUCTOR Cascadeable 4K x 9 FIFO Functional Description' • • • • The CY7C432 and CY7C433 are first-in first-out FIFO memories offered in 600-mil-wide and 300-mil-wide packages, respectively. They are 4096 words by 9 bits wide. Each FIFO memory is orga­

plc em 235

Abstract: 7C235
Contextual Info: CY7C235 CYPRESS SEMICONDUCTOR F e a tu re s • CMOS for optimum speed/power • High speed — 25 na max set-up — 12 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous output enables • On-chlp edge-triggered registers

Contextual Info: es Br Sm QYPRESS 'W SEMICONDUCTOR PAL C20 Series = Reprogrammable CMOS PALC 16L8,16R8,16R6,16R4 — tpi> = 20 ns • High reliability — Proven EPROM technology — > 1500V input protection from elec­ trostatic discharge — 100% AC and DC tested — 10% power supply tolerances

SJ27

Abstract: PALC16R 143X1
Contextual Info: PAL C20 Series CYPRESS = SEMICONDUCTOR • C M O S E PR O M technology Tor rep ro g ram m ability • H igh p erform ance a t q u a rte r pow er — t p D = 25 ns — ts = 20 ns • H igh reliability — Proven E P R O M technology — > 1500V in p u t protection from elec­

Contextual Info: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address

CY7C425

Abstract: 7C421 dip 28 7c424
Contextual Info: CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 s CYPRESS SEMICONDUCTOR Cascadable 512 x 9 FIFO Cascadable IK x 9 FIFO Cascadable 2Kx 9 FIFO • Dual-port RAM cell • TTL compatible • Three-state outputs • Pin compatible and functional equivalent to IDT7201, IDT7202, and

65842

Abstract: 333Q CERAMIC LEADLESS CHIP CARRIER ci 4030 CY7C277
Contextual Info: CY7C277 CYPRESS Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 30-ns address set-up — 15-ns clock to output • Low power — 660 mW commercial — 715 raW (military) • Programmable address latch enable

Contextual Info: CY7C277 CYPRESS SEMICONDUCTOR Reprogrammable 32K x 8 Registered PROM • Programmable address latch enable input • Programmable synchronous or asynchronous output enable • On-chip edge-triggered output registers • EPROM technology, 100% programmable

tba9

Abstract: CY7C439 4635 CY7C439-25DC
Contextual Info: .1 - c PRESS SEMICONDUCTOR 4b E BSaibbS GG07225 J> 3 fCYP CY7C439 W CYPRESS SEMICONDUCTOR Bidirectional 2 K x 9 FIFO Features Functional Description • 2048 x 9 FIFO buffer memory The CY7C439 is a 2048 x 9 FIFO memory capable of bidirectional operation. As the

7C235

Contextual Info: CY7C235 CYPRESS SEMICONDUCTOR • CM OS for optimum speed/power • High speed — 25 ns max set-up — 1 2 ns clock to output • Low power — 495 mW commercial — 660 mW (military) • Synchronous and asynchronous output enables • On-chip edge-triggered registers