40H1 Search Results
40H1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TRS40H120H |
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SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, TO-247-2L | Datasheet | ||
| G40H12331HR |
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Mini-SAS HD Internal Connectors, High Speed Input Output Connectors, Right angle press fit ,1x2 tray package . | |||
| G40H11332HR |
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Mini-SAS HD Internal Connectors, High Speed Input Output Connectors, Right angle press fit ,1x1 tape and reel package . | |||
| G40H13331HR |
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Mini-SAS HD Internal Connectors, High Speed Input Output Connectors, Right angle press fit ,1x4 tray package . | |||
| G40H11331HR |
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Mini-SAS HD Internal Connectors, High Speed Input Output Connectors, Right angle press fit ,1x1 tray package . |
40H1 Datasheets (14)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
TYN40H-1200SJ
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Jiangsu JieJie Microelectronics Co Ltd | 40A SCR with 1200V repetitive peak off-state and reverse voltage, high dV/dt immunity, suitable for solid state relay, UPS, SVC, power charger, and T-tools applications in TO-247J package. | Original | ||||
HCCW120R040H1
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VANGUARD | 1200V/55A N-Channel Advanced Power MOSFET with 42 mΩ RDS(on) at VGS=20V, TO-247 package, designed for high-voltage power applications with low on-resistance and fast switching capabilities. | Original | ||||
AK40H12
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 120A continuous drain current, RDS(ON) less than 4 mΩ at VGS=10V, and low gate charge, suitable for high-frequency switching applications. | Original | ||||
NCE40H11
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NCEPOWER | NCE40H11 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 110A continuous drain current, and low on-resistance of 3.4mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in switching applications. | Original | ||||
NCE40H14
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NCEPOWER | NCE40H14 is a channel enhancement mode power MOSFET with 40V drain-source voltage, 140A continuous drain current, and low on-resistance of less than 2.9mΩ at VGS=10V, designed for high-frequency switching applications. | Original | ||||
NCE40H10K
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NCEPOWER | NCE40H10K is a 40V, 100A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 4.3mΩ at VGS=10V and high switching performance in TO-252-2L package. | Original | ||||
SBD40H150CTB
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JCET Group | SBD40H150CTB and SBDF40H150CTB are 150V Schottky barrier rectifiers in TO-220-3L/TO-220F packages, with 40A average rectified current, 300A non-repetitive surge current, low forward voltage drop of 0.68V at 150°C, and operating junction temperature up to 175°C. | Original | ||||
HCCZ120R040H1
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VANGUARD | 1200V/55A N-Channel SiC MOSFET with 42mΩ RDS(on) at VGS=20V, TO-247-4L package, designed for high-speed switching, featuring low gate charge, low output capacitance, and avalanche capability. | Original | ||||
TYN40H-1600SJ
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Jiangsu JieJie Microelectronics Co Ltd | 40A SCR with 1600V repetitive peak off-state and reverse voltage, high dV/dt immunity, suitable for solid state relays, UPS, SVC, power chargers, and T-tools in TO-247J package. | Original | ||||
NCE40H12
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NCEPOWER | NCE40H12 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 120A continuous drain current, and low on-resistance of 3.1mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. | Original | ||||
AK40H12I
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK40H12I with 40V drain-source voltage, 120A continuous drain current, RDS(ON) less than 4mΩ at VGS=10V, and low gate charge for high-frequency switching applications. | Original | ||||
NCE40H12A
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NCEPOWER | NCE40H12A is a channel enhancement mode power MOSFET with 40V drain-source voltage, 135A continuous drain current, and ultralow on-resistance of 3.2mΩ typical at VGS=10V, suitable for high-frequency switching and load switch applications. | Original | ||||
NCE40H12K
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NCEPOWER | 40V, 120A NCE40H12K trench MOSFET with advanced technology for low RDS(ON) of 3.95mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. | Original | ||||
NCE40H11K
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NCEPOWER | 40V, 110A NCE40H11K trench MOSFET with advanced technology for low RDS(ON) of 4.0 mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. | Original |
40H1 Price and Stock
WeEn Semiconductor Co Ltd WN3S40H100CXQDIODE ARR SCHOTT 100V 20A TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WN3S40H100CXQ | Tube | 5,071 | 1 |
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Buy Now | |||||
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WN3S40H100CXQ | Tube | 6,000 |
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Buy Now | ||||||
Essentra Components 010440H150B440 X 1 1/2 HEX HEAD M/S BLK M11 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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010440H150B | Bag | 1,000 | 1 |
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Buy Now | |||||
Essentra Components 010640H100B640X1 HEX BLACK M111 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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010640H100B | Bag | 1,000 | 1 |
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Buy Now | |||||
Coilcraft Inc DO5040H-103MLDFIXED IND 10UH 8.6A 11MOHM SM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DO5040H-103MLD | 861 | 1 |
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Buy Now | ||||||
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DO5040H-103MLD | 1,076 | 1 |
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Buy Now | ||||||
STMicroelectronics STGW40H120DF2IGBT TRENCH FS 1200V 80A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STGW40H120DF2 | Tube | 187 | 1 |
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Buy Now | |||||
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STGW40H120DF2 | Tube | 14 Weeks | 600 |
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Buy Now | |||||
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STGW40H120DF2 | 643 |
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Buy Now | |||||||
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STGW40H120DF2 | 43 | 1 |
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Buy Now | ||||||
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STGW40H120DF2 | 4,020 | 15 Weeks | 30 |
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Buy Now | |||||
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STGW40H120DF2 | 15 Weeks | 30 |
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Buy Now | ||||||
40H1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
40H12
Abstract: Max 761 AWG28 SEPA MF
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Original |
40H12L, 40H12 40H12L AWG28 40H12L L10/MTBF 40H12xA E54695) E44247) 40H12 Max 761 AWG28 SEPA MF | |
TC40H161P
Abstract: TC40H160P TC40H161 tc40h182 TC40H161P/F-
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OCR Scan |
TC40H160P/F H162P/F JC40H161 P/F-TC40H163P/F TC40H160 TC40H161 TC40H162 TC40H163 TC40H160/161/162/163 TC40H160/162 TC40H161P TC40H160P tc40h182 TC40H161P/F- | |
40404040H
Abstract: 6115 l500m DPZ256
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OCR Scan |
DPZ256X32V3 56X32V3 12fiK IhroughZ256X32 125-c 120ns 150ns 170ns 200ns 40404040H 6115 l500m DPZ256 | |
GMR40H150C
Abstract: GMR40H150CTB3T GMR40H150CTP3T GMR40H150CTPF3T 40h150c
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Original |
GMR40H150C O-220FPAB 45TYP O-220AB GMR40H150C GMR40H150CTB3T GMR40H150CTP3T GMR40H150CTPF3T 40h150c | |
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Contextual Info: 9.7U« 91 l.< LEDR-L /'f e s te n ; 1.5x8 dots includes cursor 2.Built-in controller KS 0066 or Equivalent 3.+5V pow er supply (A Iso available for+3V ) 4.1/16 duty cycle 5.LED can be driven by pinl,pin2,pinl5,pinl6 or A and K 6.N.V. Optional for +3V power supply |
OCR Scan |
14-0L4PXH 125X1 D84x9 400H2 | |
DPSZ384X16BIA3-ABS
Abstract: Dense-Pac Microsystems
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Original |
DPSZ384X16BIA3-ABS DPSZ384X16BIA3-ABS 30A206-00 Dense-Pac Microsystems | |
GMR40H125C
Abstract: GMR40H125CTB3T GMR40H125CTP3T GMR40H125CTPF3T
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Original |
GMR40H125C O-220FPAB 45TYP O-220AB GMR40H125C GMR40H125CTB3T GMR40H125CTP3T GMR40H125CTPF3T | |
IC 1026
Abstract: MM1026B
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OCR Scan |
MM1026, MM1245 IC 1026 MM1026B | |
DPZ128X32IV3
Abstract: 40404040H
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Original |
DPZ128X32IV3 DPZ128X32IV3 30A072-10 40404040H | |
20EE0007
Abstract: 29A00004 1391406 7025-F50 austrian micro systems e001, 7025 20E0000B 21A00002 Ethernet E168 SA38-0541-01
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Original |
RS/6000 SA38-0541-01 07L8343 7L8343 20EE0007 29A00004 1391406 7025-F50 austrian micro systems e001, 7025 20E0000B 21A00002 Ethernet E168 SA38-0541-01 | |
40H100C
Abstract: 40H100C DIODE 40H100C EQUIVALENT GMR40H100C GMR40H100CTB3T GMR40H100CTBF3T GMR40H100CTP3T GMR40H100CTPF3T
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Original |
GMR40H100C O-220FPAB 45TYP O-220AB 40H100C 40H100C DIODE 40H100C EQUIVALENT GMR40H100C GMR40H100CTB3T GMR40H100CTBF3T GMR40H100CTP3T GMR40H100CTPF3T | |
CL-SH260
Abstract: CL-SH265 ior5350 sh265 TDA 4442 bd 9893 clsh265
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OCR Scan |
CL-SH265 CL-SH260 24-mA 16-MHz 12MHz 68HC11 84-pin 100-pin CL-SH265 CL-SH260 ior5350 sh265 TDA 4442 bd 9893 clsh265 | |
DPZ256Contextual Info: 8 Megabit FLASH EEPROM DPZ256X32IV3 DESCRIPTION: The DPZ256X32IV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers |
Original |
DPZ256X32IV3 DPZ256X32IV3 30A072-11 DPZ256 | |
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Contextual Info: 8 Megabit FLASH EEPROM DPZ256S32IW DESCRIPTION: The DPZ256S32IW is a 256K x 32 high-speed CMOS FLASH EEPROM module comprised of eight 128K x 8 monolithic CMOS FLASH EEPROM’s, an advanced high-speed CMOS decoder, and decoupling capacitors surface mounted on an FR-4 SIMM substrate. |
Original |
DPZ256S32IW DPZ256S32IW 250ns 30A115-00 | |
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40H100C DIODE
Abstract: 40H100C GMR40H100C GMR40H100CTB3T GMR40H100CTBF3T GMR40H100CTP3T GMR40H100CTPF3T
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Original |
GMR40H100C O-220AB 10max) 45TYP O-220FPAB 40H100C DIODE 40H100C GMR40H100C GMR40H100CTB3T GMR40H100CTBF3T GMR40H100CTP3T GMR40H100CTPF3T | |