40AT Search Results

7905

Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
Contextual Info: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and

Contextual Info: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK7907-40ATC

Contextual Info: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK9907-40ATC

Abstract: MQ101
Contextual Info: BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 — 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS

BUK9107-40ATC

Abstract: MBL306
Contextual Info: BUK9107-40ATC TrenchPLUS logic level FET Rev. 03 — 22 January 2002 Product data M3D322 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS

M2S56D20

Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
Contextual Info: DDR SDRAM Rev.1.2 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP Jun. '01 Preliminary 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit,

M2S56D20

Abstract: M2S56D20ATP M2S56D30ATP
Contextual Info: MITSUBISHI LSIs DDR SDRAM Rev.1.44 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Mar. '02 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

Contextual Info: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: Sparkle Power Inc. A Leading Power Supply manufacturer Web site: www.sparklepower.com FSP200-40AT I221 200 Watts Flex AT Switching Power Supply Features Specification • • High efficiency and reliability • Internal 12V DC fan included • Noise Killer (Thermal fan speed control function)

BUK9107-40ATC

Abstract: C2532
Contextual Info: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

09874

Contextual Info: BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS

Contextual Info: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: DDR SDRAM Rev.1.31 Dec. '01 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP –75A, -75, -10 M2S56D20/ 30/ 40AKT –75A, -75, -10 256M Double Data Rate Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

Contextual Info: MITSUBISHI LSIs DDR SDRAM Rev.1.43 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Jan. '01 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,

Contextual Info: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54

M2S56D20

Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
Contextual Info: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,

Contextual Info: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

M2S56D20

Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
Contextual Info: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,

M2S28D20

Abstract: M2S28D20ATP M2S28D30ATP M2S28D40ATP
Contextual Info: MITSUBISHI LSIs DDR SDRAM Rev.0.1 M2S28D20/ 30/ 40ATP Jun,'00 Preliminary 128M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S28D20ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit,

BUK7107-40ATC

Contextual Info: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK7905-40ATE

Contextual Info: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK9907-40ATC

Contextual Info: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for