4096 BIT RAM Search Results

MBM100470A-7

Contextual Info: F U J IT S U ECL 4096-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100470A-7 August 1998 Edition 1.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100470A Is a fully decoded 4096-bit memory designed for high-speed scratch pad, control This device is organized as 4096 words by one

10470 ECL

Abstract: 10470AF 10470F 10470ADC aet33
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT ECL RAM 4096 x 1 10470/10470A DESCRIPTION FEATURES The 10470/10470A device is a 4096 words by 1 bit fully decoded Read/Write Random Access Memory, designed for high speed scratch pad, control and bu ffer storage

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

FT312

Contextual Info: TTLISOPLANAR MEMORY 93L470/93L471 4096 X 1 - BIT FULLY DECODED RANDOM ACCESS MEMORY DESCRIPTION— The 93L470 and 93L471 are low power 4096-bit TTL Read/Write Random Access Memories organized 4096 words by one bit. The devices are identical except for the output stage. The 93L470 has an uncommitted collector output, while the 93L471 has a

Contextual Info: F U J IT S U ECL 4096-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10470A-7 August 1986 Edition 1.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A is a fully decoded 4096-blt ECL read/write random access memory designed fo r high-speed scratch pad, control and buffer storage applications.

Contextual Info: ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU MBM10476RR-9 December, 198S Edition 1.0 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY The Fujitsu MBM10476RR-9 Is fully decoded 4096-bit ECL self-tim ed read/write random access memory STRAM . The device Is organized as 1024 words by 4 bits,

ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Contextual Info: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh

UPD2147

Abstract: 2147 memory ic
Contextual Info: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which

Contextual Info: ECL 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FUJITSU MBM10476LL-9 _ _ 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY I J Decem ber, 1988 Edition 2.0 The Fujitsu M B M 10476LL-9 It fully decoded 4096-blt ECL self-tim ed read/w rite random access mem ory STR A W . The device Is organized as 1024 words by 4 bits,

im6654

Abstract: 6654
Contextual Info: 4096-Bit CMOS UV EPROM GENERAL DESCRIPTION FEATURES The Intersil IM6653 and IM6654 are fully decoded 4096 bit CMOS electrically programmable ROMs EPROMs fabricated with Intersil's advanced CMOS processing tech­ nology. In all static states these devices exhibit the micro­

NMC2147HJ-1

Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
Contextual Info: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­

Contextual Info: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

M54601P

Abstract: 2107B RAM CI 4096 TMS4060 m54601 2107B 4096-W0RD Intel 2107B 2SC714 22P1
Contextual Info: M ITSUBISHI L S Is M 5L 2107BP, S 4 0 9 6 -B IT 4096-W 0RD B Y 1-BIT DYNAMIC RAM DESCRIPTION These devices are 4096-word by 1-bit dynamic RAMs, fab­ ricated with the N-channel silicon-gate MOS process. These RAMs are designed for large-capacity memory systems

Contextual Info: October 1989 Edition 1.0 FUJITSU D A TA SH E ET : MBM10A474-3 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10A474 is fully decoded 4096-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage applications.

HM10474

Abstract: mbm10474 oba3 tl 494 equivalent u9229
Contextual Info: DM10474A/DM10474A-1 O/DM 10474A-8 WjWJk National Æ / æ Semiconductor Æ Æ Corporation March 1987 DM 10474A/DM 10474A-10 /D M 10474A-8 4096-Bit 1024 x 4 ECL RAM General Description Features The DM 10474A/ DM 10474A-10/DM10474A-8 is a fully de­ coded 4096-bit, 10KH compatible, ECL read/write random

93L470

Abstract: 93L471 71XM 93471
Contextual Info: TTLISOPLANAR M EM O R Y 9 3 L 4 7 0 /9 3 L 4 7 1 409 6 X 1 - BIT FULLY DECODED RANDOM ACCESS MEMORY DESCRIPTION— The 93L470 and 93L471 are low power 4096-bit TTL Read/W rite Random Access Memories organized 4096 w ords by one bit. The devices are identical except for

2148 static ram

Abstract: 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram
Contextual Info: 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2148 is a high speed 4096 bit static RAM or­ ganized 1024 words by 4 bits. It is a single-layer poly HMOS version of the industry standard 2114, and pin compatible

Contextual Info: ECL 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU M BM 10476LL-9 December, 1988 Edition 2.0 4098-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY The Fujitsu MBM10476LL-9 Is fully decoded 4096-bit ECL self-tim ed read/write random access memory STRAM . The device Is organized as 1024 words by 4 bits,

4096 bit static RAM

Abstract: M2147 MD2147
Contextual Info: M 2147 4 0 9 6 B it 4 0 9 6 x 1 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Intersil M2147 is a high-speed 4096-bit static RAM organized 4096 words by 1 bit, fabricated with Intersil’s HM OS single-layer poly selective-oxidation process. In­

NMC6504-5

Abstract: NMC6504-9 NMC6504N-5 MC6504 J18A N18A NMC6504J-2 NMC6504J-5 NMC6504J-9 NMC6504
Contextual Info: NMC6504 4096-Bit 4096 x 1 Static RAM General Description Features The NMC6504 is a s ta tic CMOS random access read/w rite m em ory organized as 4096 w ords o f 1 b it each. T h is device is fa b ric a te d w ith N a tio n a l S em ic o n d u c to r’s silicon-gate

AM7204A

Abstract: PDW028
Contextual Info: Am7204A Advanced Micro Devices High Density First-In First-Out FIFO 4096 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO ■ Status flags—full, half-full, empty ■ 4096 x 9 organization ■ Cycle times of 25/35/45/65 ns for standard

Contextual Info: P A R A H G M 2048x18: PDM42235 4096 x 18: PDM42245 CMOS High Speed Synchronous FIFOs 2048 x 18-Bit to 4096 x 18-Bit Description Features LJ High speed access times Com'l: 10,15, 20, 25,30,35,50 ns Ind: 15, 20, 25, 30,50 ns □ Clock synchronous interface for high speed

Contextual Info: bt.E D INTEGRATED DEVICE m MÔ2S771 0G12567 DUAL 4096 x 9 CMOS SyncFlFO1 • IDT PRELIMINARY IDT72841 FEATURES: DESCRIPTION: • Functionally equivalent to two 72241 4096 x 9-bit FIFOs in one package • Offers optimal combination of large capacity, high speed,

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles