4077 8 PIN Search Results

IDT7M4077

Contextual Info: 256K x 32 BiCMOS/CMOS STATIC RAM MODULE PRELIMINARY IDT7M4077 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a multilayer ceramic substrate using eight 256Kx4

IDT7M4077

Abstract: kw05 2814t
Contextual Info: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a mu Itilay er ceramic substrate using eight 256Kx4

Contextual Info: LTC4077 Dual Input Standalone Li-Ion Battery Charger DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

g2501

Abstract: LTC4077EDD 50-mV 4077f
Contextual Info: LTC4077 Dual Input Standalone Li-Ion Battery Charger U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from

4077 8 pin

Abstract: automatic room power control circuit block diagram Battery charger 24 volt over discharge protection circuit for li-ion battery QFN PACKAGE thermal resistance supplly LTC4077EDD 1100mAH
Contextual Info: LTC4077 Dual Input Standalone Li-Ion Battery Charger DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ Charges Single-Cell Li-Ion Batteries from Wall Adapter and USB Inputs Automatic Input Power Detection and Selection Charge Current Programmable up to 950mA from

4077 cmos

Abstract: A13L IDT70V7288 ci 4077
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

ci 4077

Abstract: 4077 cmos truth table for 7 inputs OR gate A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

A13L

Abstract: IDT70V7288 4077 cmos
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

CDBM455C7

Abstract: 4077 8 pin LA8608V SSOP24 IC 4077
Contextual Info: Ordering number: EN 4077A Monolithic Linear IC LA8608V 1.8 V Low-Voltage Narrowband FM-IF System Overview Package Dimensions The LA8608V is a narrowband FM-IF system intended for communications equipment, operates at just 1.8 V, and is contained in an ultrasmall package with a 0.65 mm pitch. In

A12L

Abstract: A13L IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

A12L

Abstract: A13L IDT70V7288 4077 cmos
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

A13L

Abstract: IDT70V7288 ci 4077
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7288S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 16K x 16 banks – 1 Megabit of memory on chip Fast asynchronous address-to-data access time: 15ns

STK772B

Abstract: 3032B LA5601 LA5009M
Contextual Info: Continuée from previous page Package Device Type Number of Drawing pins and number configuration Description Feature* : • LA5005M MFP 8 3032B 5 V low-saturation voltage regulator Miniflat package version o1 the LA5005 LA5006M MFP 8 3032B 6 V low-saturation voltage regulator

IN 4077

Abstract: IC 4077 910UB
Contextual Info: \dt Integrated Device Technology, Inc. HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

A13L

Abstract: IDT70V7288
Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 16K x 16 banks

Contextual Info: Technical Documents Specifications subject to change. For latest design specifications. 1- 800- 522-6752 The following is a list of technical documents covering the application, performance and maintenance of AMP RF connectors. Product Specifications describe technical performance

Contextual Info: HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L Features 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture processor communications; interrupt option Interrupt flags with programmable masking

Contextual Info: Integrated D e v ile Technology, li e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

Contextual Info: In te g ra te d D e v ile T e c h n o lo g y , l i e . HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT70V7288S/L FEATURES: DESCRIPTION: • 64K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 16K x 16 banks

40136

Abstract: ROS-4077-119
Contextual Info: Surface Mount Voltage Controlled Oscillator 5V Tuning for PLL IC’s ROS-4077-119+ 3876 to 4077 MHz Features • Linear Tuning characteristics • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $19.95 ea. QTY 5-49

ROS-4077-119

Abstract: PL-012
Contextual Info: Surface Mount Voltage Controlled Oscillator 5V Tuning for PLL IC’s ROS-4077-119+ 3876 to 4077 MHz Features • Low phase noise • Low pulling • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $19.95 ea. QTY 5-49 + RoHS compliant in accordance

lcx 574

Abstract: STR 4512 HC 4093 4001 4011 cmos HC 40106 4017 14 pin package 4011 cmos logic gate HC 4011 logic gate hcf 4541 equivalent hct 4049
Contextual Info: Standard Logic ICs Selection guide August 2007 www.st.com/logic Family selector HCT 0 to VCC 4 12 4.5 to 5.5 0 to VCC 4 12 AC 2 to 6 0 to VCC 24 4 ACT 4.5 to 5.5 0 to VCC 24 4 VHC 2 to 5.5 0 to 5.5 8 4 VHCT 4.5 to 5.5 0 to 5.5 8 4 V1G 2 to 5.5 0 to 5.5 8 4