4075 DATASHEET Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD620010 SHD620010P TECHNICAL DATA DATA SHEET 4075, REV. E HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 40 AMP, POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE. FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

K1047

Abstract: NTCS0603E3 SS0805 C3964 5x222 NTCS0402E3223 103 ntc K347
Contextual Info: V i s hay I n t e r t echn o l o g y, I nc . NTHS a nd NTCS Se r ie s Key Benefits • Nickel/tin and tin/lead terminations available • Wraparound terminations • Allows design flexibility for use with hybrid circuitry • High-density monolithic construction

SMD Thermistors-Sample Kit

Abstract: NTHS0603N01N1003JE
Contextual Info: SMD Thermistors-Sample Kit www.vishay.com Vishay Sample Kit Surface Mount Thermistors NTCS, TFPT, NTHS, PTS FEATURES • NTC and PTC thermistors • AEC-Q200 qualified and UL certified products available • Material categorization: for definitions of compliance please see

EPC Gan transistor

Abstract: Ultra Low Qg EPC1001
Contextual Info: DATASHEET EPC1001 EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC1005

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1005 EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC1001

Abstract: EPC Gan transistor
Contextual Info: DATASHEET EPC1001 EPC1001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC Gan transistor 1015

Abstract: EPC1015 EPC Gan transistor
Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: DATASHEET EPC1005 EPC1005 – Enhancement Mode Power Transistor VDSS , 60 V RDS ON , 7 mW ID , 25 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC Gan transistor

Abstract: EPC2001 DIODE marking ED X9
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC2015

Abstract: EPC Gan transistor FX-93 micrometer
Contextual Info: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC2001

Abstract: EPC Gan transistor FX-93 FET MARKING QG
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2801 EPC2801 – Enhancement Mode Power Transistor PRELIMINARY VDSS , 100 V RDS ON , 7 mW ID , 25 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2015 EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: eGaN FET DATASHEET EPC2815 EPC2815 – Enhancement Mode Power Transistor NEW PRODUCT VDSS , 40 V RDS ON , 4 mW ID , 33 A High Lead Bump Finish: 95%Pb/5%Sn EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: EPC2001 eGaN FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mΩ ID , 25 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coeicient allows very low RDS(ON), while its lateral device structure

NTCS0402E3103

Abstract: 50264 E148885 NTCS0402E3 NTCS0402E3153 NTCS0402E3472 NTCS0402E3223 RT214
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

NTCS0402E3473

Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

NTCS0402E3223

Abstract: ntc 901
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

Contextual Info: NTCS0402E3.T www.vishay.com Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 1 % • Suitable for wave or reflow soldering • NiSn terminations

Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected

NTC 472

Contextual Info: V i shay Intertechn o l o g y, Inc . Resistors - Accurate Over a Wide Temperature Range I INNOVAT AND TEC O L OGY NTCS and NTHS Series N HN NTC THERMISTORS O 19 62-2012 NTC Thermistors, Surface-Mount Chips Key Benefits • • • • • Nickel/tin and tin/lead terminations available

LT 537

Abstract: 80502
Contextual Info: NTCS0402E3.T Vishay BCcomponents SMD 0402, Glass Protected NTC Thermistors FEATURES • TCR ranging from - 6.5 %/K at - 40 °C to - 2 %/K at 150 °C • Tolerance on R25 down to 3 % • Suitable for wave or reflow soldering • NiSn terminations • Fully glass coated and protected