40454 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: FM24CL16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24V05 512-Kbit 64 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

Contextual Info: FM24C16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: Printview: Male connector; with straight solder pins; with protection against mismating - Item No.: 734137/046-000 . Male connector; with straight solder pins; with protection against mismating Item No.: 734-137/046-000 . Male connector; with straight solder pins; with protection against mismating

epcos 565-2

Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

B57550G0103F000

Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
Contextual Info: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: FM24CL04B 4-Kbit 512 x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: PRELIMINARY FM25H20 2-Mbit 256 K x 8 Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

MT9T031

Abstract: MT9T031C12STC aptina sensor Aptina MT9M001 BY142 CMOS sensor Aptina "1.3 megapixel" SHARP CCD Dome Camera mt9* aptina
Contextual Info: MT9T031: 1/2-Inch 3-Mp Digital Image Sensor Applications 1/2-Inch 3-Megapixel CMOS Digital Image Sensor MT9T031 For the latest data sheet, refer to Aptina’s Web site: www.aptina.com Features Table 1: Aptina DigitalClarity® imaging technology High frame rate

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

CY2SSTU877

Abstract: CY2SSTU877BVXC-32 CY2SSTU877BVXC-32T CY2SSTU877BVXI-32
Contextual Info: CY2SSTU877 PRELIMINARY 1.8V, 500-MHz, 10-Output JEDEC-Compliant Zero Delay Buffer Features distributes a differential clock input pair CK, CK# to ten differential pair of clock outputs (Y[0:9], Y#[0:9]) and one differential pair of feedback clock outputs (FBOUT, FBOUT#).

Contextual Info: FM25W256 256-Kbit 32 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: FM25V10 1-Mbit 128 K x 8 Serial (SPI) F-RAM 1-Mbit (128 K × 8) Serial (SPI) F-RAM Features Functional Overview • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

Contextual Info: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM Organized as 256K x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

yd 7377

Abstract: mq2 gas sensor mq2 gas sensor pin assignment transistor J 3305-1 transistor J 3305-2 ZW-101PG1 JW32CUH1 JW-212SA diode KIV 63 capacitor 333J
Contextual Info: Version 2.3 Produced in Nov. 2000 R SSSharp Programmable Controller Model name New Satellite JW30H User's Manual-Hardware version We thank you for your purchase of the SHARP programmable controller JW30H. This booklet user's manual, hardware version explains mainly the JW30H's hardware; the

Contextual Info: Printview: Female connector; with locking levers; 3-pole; pin spacing 7.62 mm / 0.3 in; 100% protected against mismating; codable - Item No.: 831-3103/037-000 . Female connector; with locking levers; 3-pole; pin spacing 7.62 mm / 0.3 in; 100% protected against mismating; codable