4045 FET Search Results

K25V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 —14.5GHz BAND •3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 2 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5

4045 FET

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G U n it: m illim e te rs linches The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5

MGFK30M4045

Abstract: E 212 fet DC bias of gaas FET
Contextual Info: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched

K37V4045

Abstract: k37v
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 37V 4045 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14 .0 ~ 14.5 G Hz-band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: b2 fl2 1 DDlöDbB ÔÔ4 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 39V 4045 1 4 .0 —1 4 .5GHz BAND 8 W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched GaAs power FE T especially designed for use in 1 4 .0 — 14.5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 33V 4045 1 4 . 0 - 14.5GH z BAND 2W IN TERN ALLY MATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic

14.5ghz

Abstract: GaAs FET chip MGFK25V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 ~ 1 4 .5 G H z BAND 0 .3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic

K30V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5

K35V4045

Contextual Info: MITSUBISHI SEM ICO ND UCTOR < G aA s FET> M G F K 35V 4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 ,0 ~ 14.5

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 36V 4045 pBtU v o Tv.» ç lw W " gV ,C. 5 mP 1 4 .0 — 14.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 6 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 1 4 . 0 - 1 4 . 5

39v4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 39V 4045 14.0 ~ 14.5GHz B A N D 8 W IN T E R N A LLY M A TCH D G aA s FET Son»a P DESCRIPTION OUTLINE DRAW ING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched G aA s power F E T especially designed for use in 1 4 . 0 - 14.5

K30V

Abstract: 145g K30V4045 P1D8
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5

MGFK35V4045

Abstract: FS21
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic

TGA4043

Contextual Info: TGA4043 Q Band Power Amplifier Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm 0.121 x 0.124 x 0.004 in Primary Applications

f244 motorola

Abstract: F84041 Cyrix 486 dx2 Cyrix 486 CS4021 4MB flash bios chip 8 pin 146818 rtc F84045 CS4041 weitek
Contextual Info: CS4041 CHIPSet 84041 and 84045 CHIPSet Data Book Revision 1.0 February 1995 P R E L I M I N A R Y Copyright Notice Copyright 1994 and 1995 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit, transcribe,

intel 8042 microcontroller, ibm pc

Abstract: Cyrix 486 dx2 S042E SCHEMATIC ATI graphics card F84041 Cyrix 486 F84045 A2023 cs4021 chips technologies ide
Contextual Info: C r ï i r i b _ Subject to change without notice CS4041 CHIPSet - Single bank or dual bank word interleaved cache - Multiple timing modes supported for cost performance tradeoff • Power Management - SMI support - Many power management features can be utilized

TGA4043

Contextual Info: Advance Product Information April 25, 2005 Q-band Power Amplifier TGA4043 Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm

TGA4043-EPU

Contextual Info: Advance Product Information September 15, 2003 Q-band Power Amplifier TGA4043-EPU Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm

MGFK41V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK41V4045 1 4 .0 — 14.5G H z BAND 1 2 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK4 1V 40 45 is an internally impedance matched GaA sp ow erFET especially designed for use in 1 4 .0 - 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic

25V4045

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 25V4045 1 4 .0 — 14.5G H z BAND 0 .3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F ET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic

K35V4045

Abstract: FK35V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK35V4045 14.0— 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic

N3810

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK3 7V4045 1 4 . 0 - 14.5GHz BAND SW INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The M G FK 3 7 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic

MwT-371

Abstract: 371 fet
Contextual Info: MwT-3 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 11 dB SMALL SIGNAL GAIN AT 12 GHz • +21.0 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 300 MICRON GATE WIDTH