400V TRANSISTOR Search Results

CEB740N

Abstract: CEF740N CEI740N CEP740N
Contextual Info: CEP740N/CEB740N CEI740N/CEF740N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740N 400V 550mΩ 10A 10V CEB740N 400V 550mΩ 10A 10V CEI740N 400V 550mΩ 10A CEF740N 400V 550mΩ 10A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

CEP740A

Abstract: CEB740A CEF740A CEI740A S83-5
Contextual Info: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).

CEP740A

Abstract: CEB740A CEF740A CEI740A
Contextual Info: CEP740A/CEB740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP740A 400V 650mΩ 10A 10V CEB740A 400V 650mΩ 10A 10V CEI740A 400V 650mΩ 10A 10V CEF740A 400V 650mΩ 10A e 10V D Super high dense cell design for extremely low RDS(ON).

cep730g

Contextual Info: CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP730G 400V 1Ω 5.5A 10V CEB730G 400V 1Ω 5.5A 10V CEF730G 400V 1Ω 5.5A e 10V D Super high dense cell design for extremely low RDS(ON).

CEB740N

Abstract: CEF740N CEP740N
Contextual Info: CEP740N/CEB740N CEF740N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP740N 400V 550mΩ 10A 10V CEB740N 400V 550mΩ 10A CEF740N 400V 550mΩ 10A 10V 10V e D Super high dense cell design for extremely low RDS(ON).

cep740g

Abstract: CEB740G cef 473
Contextual Info: CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP740G 400V 0.55Ω 10A 10V CEB740G 400V 0.55Ω 10A 10V CEF740G 400V 0.55Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON).

AN7254

Abstract: RFM12N35 RFM12N40
Contextual Info: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,

2SD2568

Abstract: 2sd25
Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current

Contextual Info: 2SD2568 Transistors Power Transistor 400V,0.5A 2SD2568 !Features 1) High breakdown voltage.(BVCEO=400V) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage Collector current

Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

TRANSISTOR MARKING 1d6

Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

pnp 400v 4a

Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
Contextual Info: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

3n40

Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Zetex T 705

Abstract: TRANSISTOR MARKING 1d6 TS16949 ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

FDD3N40TM

Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
Contextual Info: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

2SD2568

Contextual Info: 2SD2568 Transistors Power Transistor 400V, 0.5A 2SD2568 zFeatures 1) High breakdown voltage.(BVCEO=400V) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage Parameter VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage

Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

2SC4620

Abstract: 2SA1759 2SC4505 T100 pw 10m pw10m
Contextual Info: 2SC4505 / 2SC4620 Transistors Power Transistor 400V, 0.1A 2SC4505 / 2SC4620 zExternal dimensions (Unit : mm) MPT3 0.5 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA.

TS16949

Abstract: ZXTN08400BFF ZXTP08400BFF ZXTP08400BFFTA
Contextual Info: ZXTP08400BFF 400V, SOT23F, PNP medium power high voltage transistor Summary; BVCEO > -400V BVECO > -6V IC cont = -0.2A VCE(sat) < 220mV @ 100mA PD = 1.5W Complementary part number ZXTN08400BFF Description C This PNP transistor has been designed for applications requiring high

FQPF Series

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF4N50C

Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V TO-220

Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
Contextual Info: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.