400V HIGH SPEED DIODE Search Results

datasheet of rectifier diode

Abstract: "RECTIFIER DIODE" Rectification RECTIFIER DIODE diode rectifier Diodes, Rectifiers rectifier diode datasheet 1SR153 1sr153-400
Contextual Info: Diodes High–speed rectifier diode 1SR153–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Cylindrical mold. (MSD) 2) High reliability. 3)ăAssures 400V while maintaining high speed. Rectifier diodes FConstruction

1SR124

Abstract: 1SR124-400A
Contextual Info: Diodes High–speed rectifier diode 1SR124–400A FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (JEDEC: DO–41) 2) High speed. (trr=0.4µs Max.) 3) Assures 400V while maintaining high speed. Rectifier diodes

1SR124-400A

Contextual Info: 1SR124-400A Diodes Rectifier diode 1SR124-400A zExternal dimensions Units : mm zApplications High speed rectification CATHODE BAND (GREEN) zFeatures 1) Glass sealed envelope. (GSR) 2) High speed. (trr=0.4µs Max.) 3) VRM=400V guaranteed while maintaining high speed.

1SR156

Contextual Info: Diodes High–speed rectifier diode 1SR156–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Small surface mounting type. (PMDS) 2) High reliability. 3)ăPeak reverse voltage is 400V even at high speed. Rectifier diodes

1SR153-400

Contextual Info: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.

1SR153-400

Abstract: DIODE DO-41 mini
Contextual Info: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.

Contextual Info: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name

Contextual Info: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name

Contextual Info: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name

Contextual Info: HSK122-Silicon Epitaxial Planar Diode for High Voltage Switching Outline Features • High reverse voltage. Vr = 400V • LLD package is suitable for high density surface mounting and high speed assembly. Cathode band I Cathode band

1SS311

Abstract: 13G1B
Contextual Info: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance

1SS399

Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance

SC61 equivalent

Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance

RD2004

Abstract: A1486 RD2004JN
Contextual Info: RD2004JN Ordering number : ENA1486 SANYO Semiconductors DATA SHEET RD2004JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Fast forward / reverse recovery time.

1SS397

Contextual Info: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-172B Z Rev. 2 Aug. 1995 Features • High reverse voltage. (VR= 400V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp= 1.0V Typ. : VR = 400V (Min.)

Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

1SS399

Contextual Info: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)

Contextual Info: BAV5004WS HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: 50ns Maximum  400V High Reverse Breakdown Voltage Rating    Low Capacitance: 2.5pF Maximum  Surface Mount Package Ideally Suited for Automated Insertion