400V 50A TRANSISTOR Search Results

RURG5040

Abstract: RURG5050 RURG5060
Contextual Info: RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

RHRU5040

Abstract: RHRU5050 RHRU5060
Contextual Info: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast

RHRU5050

Abstract: RHRU5060 RHRU5040
Contextual Info: RHRU5040, RHRU5050, RHRU5060 S E M I C O N D U C T O R 50A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

RHRG5040

Abstract: RHRG5050 RHRG5060 50A400V
Contextual Info: RHRG5040, RHRG5050, RHRG5060 S E M I C O N D U C T O R 50A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

TA9909

Abstract: rurg5060 RURG5050 RURG5040
Contextual Info: S E M I C O N D U C T O R RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

100A6

Abstract: IRGP4078DPBF
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

NPN Transistor 50A 400V

Abstract: 400v 50A Transistor C301J PowerTech PT3523 1074 L300 PT-3522 PT-3523 NPN 350W
Contextual Info: 7298764 POWcRTECH INC ^ D lÉ T l 7 5 ciñ7fc.4 DDDD513 4 P "BIG IDEAS ll\l BIG POWER" a g p PowerTee ¡•gESSfr SO AM PERES F T -3 5 2 2 P T -3 5 2 3 HIGH VOLTAGE SILICON NPIM TRANSISTOR FEATURES V CE sat . •• , 0.6V @ 50A V B E .1.5V @ 50A

Contextual Info: T - 3 3 -/s- J SEMELAB LTD 37E D • 0133167 OOODlbM T ISM LB SEMELAB DEC 3 1 1987 7*// ^ BUP53 NPN MULTI-EPITAXIAL TRANSISTOR Designed for high energy applications requiring robust fast switching devices MECHANICAL DATA Dimensions in mm FEATU RES • LOW VCEI„„

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C

Contextual Info: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C

Contextual Info: APTCV60HM45RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C Application • Solar converter

IRG4ZC70UD

Abstract: smd diode T3 P channel 50A IGBT smd transistor 18E smd transistor 5c SMD-10 PACKAGE transistor 5c smd package SMD diode 18b 5c
Contextual Info: PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies n-channel IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in

GA100NA60U

Abstract: IC 7400 IGBT MODULE
Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

NPN Transistor 50A 400V

Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Contextual Info: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

M4150

Abstract: APT0406 APT0502 APTCV50H60T3G
Contextual Info: APTCV50H60T3G Trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C 14 Application Q1 Q3 CR1 • Solar converter CR3 18 11

Contextual Info: N AUER PHILIPS/DISCRETE BSE D • bbSBTBl DOlbBOfl 5 ■ X - 2 S '- O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating * REPETITIVE N O N -R EP ETtT IV E PEAK PEAK ON-STATE R EVER SE VOLTAGE C U R R EN T lTsHmax.t2) V RHiyimax. RATE O F

LC 3524

Abstract: ic 3524 I2 200 LB-22 ic LC 3524
Contextual Info: BIG IDEAS IN BIG POWER ” • PowerTech 90 AMPERE TRANSISTOR PT-3523 PT-3524 FEATURES PT-3523 PT-3524 Vceo . 4 0 0 V . 450V Vcb0 . 4 5 0 V . 500V

Contextual Info: APTCV60HM70RT3G Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full bridge + rectifier bridge CoolMOS & Trench + Field Stop IGBT3 Power Module CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Application • Solar converter

Contextual Info: APTC60HM45SCTG VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC60AM45B1G Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Solar converter 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 Features • CoolMOS

Contextual Info: APTC60AM45BC1G Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Solar converter 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 10 Features • CoolMOS

Contextual Info: APT50N60JCU2 ISOTOP Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 52A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K