400V 20A ULTRA FAST RECOVERY DIODE Search Results

CTG-22S

Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
Contextual Info: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S

vrrm 400v if 20A ultra fast recovery diode

Abstract: 400v 20A ultra fast recovery diode
Contextual Info: FFA20U40DN FFA20U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3P 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER

FFPF20U40S

Contextual Info: FFPF20U40S FFPF20U40S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY RECTIFIER

400v 20A ultra fast recovery diode

Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
Contextual Info: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

10a 400V ultra fast diode d2pak

Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

diode 10a 400v

Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRF1010

Abstract: ultrafast diode 10a 400v
Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

10C2

Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
Contextual Info: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A

400v 20A ultra fast recovery diode

Abstract: APT38F80B2 APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT38F80B2

Abstract: APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT38F80B2

Abstract: APT38F80L MIC4452
Contextual Info: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

L38C

Abstract: MES1104 MES1106 MES1105 Fast Recovery Rectifier, 300V
Contextual Info: MES1104 MES1105 MES1106 Microsemi Corp. The diode experts S A N T A A N A , CA Ultra Fast Switching Rectifier For more information call: 714 979-8220 FEATURES • M ICROM INIATU RE PACKAGE • VOIDLESS HERMETICALLY SEALED G LA SS PACKAGE • TRIPLE LAYER PASSIVATION

Contextual Info: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A

IC 7403

Abstract: igbt 400V 40A 40gp60b2
Contextual Info: APT40GP60B 600V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

IC 7410

Abstract: 10A IGBT driver IC igbt 400V 40A
Contextual Info: APT40GP60J 600V Mos 7™ Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT40GP60J 600V Mos 7™ Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency