IRGB4064DPBF Search Results

IRGB4064DPBF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRGB4064DPBF		International Rectifier	600V UltraFast Copack Trench IGBT in a TO-220AB package; A IRGB4064DPBF with Standard Packaging	Original	PDF	380.16KB	11
IRGB4064DPBF		International Rectifier		Original	PDF	375.95KB	10

IRGB4064DPBF Price and Stock

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Infineon Technologies AG IRGB4064DPBF IGBT TRENCH 600V 20A TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGB4064DPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	IRGB4064DPBF		155			1 - 10 - 100 - 1000 - 10000 -	Get Quote
International Rectifier IRGB4064DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IRGB4064DPBF		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRGB4064DPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
diode 10a 400v Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA	Original	IRGB4064DPbF O-220AB diode 10a 400v ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF	PDF
IRF1010 Abstract: ultrafast diode 10a 400v Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA	Original	IRGB4064DPbF IRF1010 O-220AB IRF1010 ultrafast diode 10a 400v	PDF
Contextual Info: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA	Original	IRGB4064DPbF O-220AB	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF