400V 10A NPN TRANSISTOR Search Results

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

EN1207

Abstract: 2SC3277 EN1207A 2sc3277 transistor
Contextual Info: Ordering number:EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high current. · Wide ASO. · Fast switching speed. unit:mm 2022A [2SC3277] 1 : Base

2SC4162

Abstract: 501 ic 10A Switching Regulator
Contextual Info: Ordering num ber:EN 2483A | _ 2SC4162 NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator Applications Features . High breakdown voltage, high reliability • Fast switching speed tf=0.1ps typ . Wide ASO . Adoption of MBIT process

2SC4107

Contextual Info: Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.

2SC4107

Abstract: ITR06315 ITR06316 ITR06313 ITR06314
Contextual Info: Ordering number:ENN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching . · Wide ASO. · Adoption of MBIT process.

2SC4162

Abstract: ITR06410 ITR06411 ITR06412 ITR06413
Contextual Info: 2SC4162 Ordering number : EN2483D SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V / 10A Switching Regulator Applications Features • • • • • High breakdown voltage, high reliability. High-speed switching tf : 0.1µs typ .

2sc4162

Contextual Info: Ordering number:ENN2483A NPN Triple Diffused Planar Silicon Transistor 2SC4162 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · High-speed switching tf=0.1µs typ . · Wide ASO. · Adoption of MBIT process.

power switching 10 amp 60V

Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).

Contextual Info: I Ordering number: EN 1207A 2SC3277 i NPN Triple Diffused Planar Silicon Transistor SM YO 400V/10A Switching Regulator Applications Features . High breakdown voltage, high current. . Wige ASO. . Fast switching speed. Absolute Maxima Ratings at Ta=25°C Collector-toBase Voltage

2SC4107

Contextual Info: Ordering number : EN2472A 2SC4107 i NPN Triple Diffused Planar Silicon Transistor SANYO, 400V/10A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed . Hide ASO . Adoption of MBIT process Absolute Maxima Ratings at Ta=25 C

2N5660

Abstract: 2N5662
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN FEATURES • Meets MIL-S-19500/454 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & & & & JANTXV

Dow Corning DC 11

Abstract: NTE2638 npn darlington 400v 1.*a
Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

NTE2638

Contextual Info: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid

2N5862

Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663
Contextual Info: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660

TO-216

Abstract: BUF420AI D997 RC VOLTAGE CLAMP snubber circuit BUF420AM BUF420I BUF420 BUF420A BUF420M of 4A, 50V BRIDGE RECTIFIER
Contextual Info: = 7 SCS-THOMSON 7# B U F 4 2 0 / 4 2 0 I/ 4 2 0 M B U F 4 2 0 A /4 2 0 A I/4 2 0 A M [ I B O lO I L iO T O iE û i FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R E L IM IN A R Y D A T A HIGH SWITCHING SPEED NPN POWER TRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINE APPLICA­

BUF420AI

Abstract: BUF420M
Contextual Info: SGS-THOMSON B U F 4 2 0 / 4 2 0 I/4 2 0 M B U F 4 2 0 A /4 2 0 A I/4 2 0 A M FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R E LIM IN A R Y DATA • HIGH SW ITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cB O Sym bol 500 V C ollector- E m itter Voltage V cE O 400 V Em itter- Base Voltage V ebo

etd 41

Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
Contextual Info: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

transistor lt 186

Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
Contextual Info: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol

NPN Transistor 10A 400V

Abstract: KSC2752 L 10mH TS 4142 KSC2751 400V 10A NPN transistor
Contextual Info: ¡SAMSUNG SEMICONDUCTOR INC KSC2751 " 1«4E 0 | 7^^4145 0 0 0 7 5 7 b 0 | NPN EPITAXIAL SILICON TRANSISTOR " : ; rT~33 -is HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating ' Sym bol Collector-Base Voltage

2SC2751

Contextual Info: SavantIC Semiconductor Product Specification 2SC2751 Silicon NPN Power Transistors DESCRIPTION •With TO-3N package ·High voltage ,high speed · APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1

Contextual Info: , LJne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. M J13333 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) • High Switching Speed

Contextual Info: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo 7 V