400PW Search Results

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.

Contextual Info: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.

Contextual Info: CM OS STATIC RAMS 256K 64K x 4-BIT ' , S ep a ra te Data Inputs an d O u tp u ts pr e lim in a r y IDT71281S/L IDT71282S L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s highperformance, high-reliability technology—CEMOS. This state-ofthe-art technology, combined with innovative circuit design

Contextual Info: L7C185 : v ;:i s r.r:;H pnH A m l FEATURES □ 8K x 8 Static RAM with Chip Select Pow erdow n, O utput Enable □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 425 m W typical at 25 ns

Contextual Info: L7C185 8K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

S4120

Abstract: DSC-100W S4119
Contextual Info: INTECRATED DE VIC E IME D • 4Ö55771 00033ÖG E ■ CMOS STATIC RAM 256K 64K X 4-BIT PRELIMINARY IDT 61298S : IDT 61298L 'T''^6 3 "!O FEATURES: DESCRIPTION: • The IDT61298 is a 262,144-bit high-speed static RAM organized as 64K x 4. It Is fabricated using IDT's high-performance, high-reilablllty technology—CEMOS. This state-of-the-art technology,

Dense-Pac Microsystems

Abstract: making A10
Contextual Info: DENSE-PAC MICROSYSTEMS C Û P M 2ÖE » • 275^15 0000352 O » » P C DPS512X16AA3 Dense-Pac Microsystems, Inc. ^ HIGH SPEED CERAMIC 512K X 16 CMOS SRAM MODULE ADVANCED INFORMATION 7 ^ 6 -2 3 -7 4 DESCRIPTION: The DPS512X16AA3 "DENSE-STACK" module is a revolutionary new

Contextual Info: n D M w DPS256X32AV3 Dense-Pac Microsystems, Inc. 0 HIGH SPEED 256K X 32 CMOS SRAM VERSA-STACK ADVANCED INFORMATION DESCRIPTION: The DPS256X32AV3 "VERSA-STACK" module is a revolutionary new high speed memory subsystem using Dense-Pac Microsystems' ceramic Stackable

HFE4080

Abstract: HFE4080-32X
Contextual Info: HFE4080-32X/XB A High Speed Fiber Optic VC SEL FEATURES • Industry standard ST*-LP fiber connector • Designed for drive currents between 5 and 15 mA • Optimized for low dependence of electrical properties over temperature • High speed > 1 Ghz 0PH0_229.doc

Contextual Info: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,

IDT71258S-35

Abstract: IDT71258S35
Contextual Info: CMOS STATIC RAM 256K 64Kx 4-BIT p r e l im in a r y IDT71258S IDT71258S IDT71258L FEATURES: DESCRIPTION: • The ID T 7 1258 is a 262,144-bit hig h -sp ee d sta tic RAM organized as 64K x 4. It is fa b rica te d u sin g ID T’s h ig h -p erform a n ce, high-rella b ility C E M O S te ch n o lo g y. T h is state-of-the-art te ch n olo gy, c o m ­

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

AH 503 hall sensor

Abstract: 48v, 20 amp battery charger circuit diagram transistor prc 606 j of AH 503 hall sensor sot-23 P-Channel MOSFET cpci backplane schematic RLF5018T-2R7M1R8 GN16 loua sot 23 LT6011
Contextual Info: u e r n e m m SEPTEMBER 2003 IN TH IS IS S U E . COVER ARTICLE Multiphase Power Conversion fo r Portable and Point-of-Load Boost Applications.1 David Salerno Issue H igh ligh ts. 2 LTC in the N ew s. 2

LSP280

Contextual Info: S S •MMN LSP280 Sm Sm m SS <«HPWi MM -«wr 8K x 8 Static RAM DEVICES INCORPORATED FEATURES □ 8K x 8 Static RAM w ith Chip Select Powerdown, O utput Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

LSP280PI12

Contextual Info: LSP2BD —— — i-vi.;bs r go -!h;ma L S P 2S0 8K x S Static RAM - m m m m m □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

HFE4085-322

Abstract: HFE4085-321
Contextual Info: HFE4085-32X/XB A High Speed Fiber Optic VCSEL FEATURES • Industry standard ST -LP fiber connector • Designed for drive currents between 5 and 15 mA • • Optimized for low dependence of electrical properties over temperature High speed > 1 Ghz OPHO_229.doc