400NA Search Results

M68Z512W

Contextual Info: M68Z512W 4 Mbit 512 Kbit x 8 LOW VOLTAGE, LOW POWER SRAM WITH OUTPUT ENABLE FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. 32-pin TSOP Package – 400nA (typical) – 10µA (max) ■ OPERATION VOLTAGE: 2.7 TO 3.6V ■ 512 Kbit x 8 SRAM WITH OUTPUT ENABLE

Contextual Info: urm LT1528 TECHNOLOGY 3 A Low D ro p o u t R e g u la to r for M icroprocessor A p p lic a tio n s K O TU R C S D cscn iPTio n • Dropout Voltage: 0.6V at out = 3A ■ Fast Transient Response ■ Output Current: 3A ■ Quiescent Current: 400nA ■ No Protection Diodes Needed

HT1380

Abstract: HT1381 PM 100 CH
Contextual Info: HT1380/HT1381 Serial Timekeeper Chip Features • · · · Operating voltage: 2.0V~5.5V Maximum input serial clock: 500kHz at VDD=2V, 2MHz at VDD=5V Operating current: less than 400nA at 2V, less than 1.2mA at 5V TTL compatible - V : 2.0V~V IH DD+0.3V at VDD=5V

2SC3964

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3964 SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE. FEATURES: . High ÜC Current Gain : hpE= 500 Min. (Ic=400nA) . Low Saturation Voltage : VcE(sat)=0-5V(Max.) (Ic=300raA)

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

UC3854 Design Note

Abstract: UC3854 test
Contextual Info: IN T E G R A T E D C IR C U IT S UC1854 UC2854 UC3854 UNITRODE High Power Factor Preregulator FEATURES DESCRIPTION • Control Boost PWM to 0.99 Power Factor • Limit Line Current Distortion To <5% • World-Wide Operation Without Switches • Feed-Forward Line Regulation

Contextual Info: CC1100 CC1100 Low-Power Sub- 1 GHz RF Transceiver Applications • Ultra low-power wireless applications operating in the 315/433/868/915 MHz ISM/SRD bands • Wireless alarm and security systems • Industrial monitoring and control • Wireless sensor networks

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

Contextual Info: 19-5778; Rev 1; 7/12 MAXQ618 16-Bit Microcontroller with Infrared Module General Description Features The MAXQ618 is a low-power, 16-bit MAXQ microcontroller designed for low-power applications including universal remote controls, consumer electronics, and white

DS-72-30

Contextual Info: Preliminary EnerChip CBC005 Rechargeable Energy Storage Device: 5µAh, 3.8V Features • • • • • • • • All Solid State Construction Designed for Wirebond Attachment Lead-Free Reflow Tolerant Thousands of Recharge Cycles Low Self-Discharge

MP697MWG

Abstract: MP696P
Contextual Info: MP696/697 inc. Microprocessor Supervisory Circuits Ordering Information Device Temperature Range Package Order No. MP696 0°C to 0°C to -40°C to -40°C to -40°C to -55°C to + + + + + + 70°C 70°C 85°C 85°C 85°C 125°C 16 Lead 16 Lead 16 Lead 16 Lead

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

CEM3340

Abstract: sawtooth wave generator 200H octave generator cem 3340
Contextual Info: 2 SE D • t7ÍD4S7 DGQ0a7b T ON CHIP SYSTEMS a iR T » ae C T R om u at sp « i« j i €3 110 Highland Ave. Los Gatos Ca. 95030, USA Tal. 400 395*3350 Voltage Controlled Oscillator The CEM 3340 and CEM 3345 até completely self contained, precision voltage controlled

Contextual Info: UCC5340 PRELIMINARY IrDA Receiver FEATURES • Micro Power, 90 A Typical Operating Current • 3.3V or 5V Operation • 8-Pin SOIC Package • 1 cm to 1 Meter IrDA Link Compliance • Directly Interfaces to IrDA Compatible UARTS and Super I/O Chips • Supports Data Rates from 2400 to

CC2500

Contextual Info: CC2500 CC2500 Low-Cost Low-Power 2.4 GHz RF Transceiver Applications • 2400-2483.5 MHz ISM/SRD band systems  Consumer electronics  Wireless game controllers  Wireless audio  Wireless keyboard and mouse  RF enabled remote controls Product Description

Contextual Info: TS3006 A 1.55V to 5.25V, 1.9µA, 9kHz to 300kHz Silicon Timer FEATURES         Ultra Low Supply Current: 1.9 A at 25kHz Supply Voltage Operation: 1.55V to 5.25V Single Resistor Sets FOUT at 50% Duty Cycle FOUT Period: • 9kHz ≤ FOUT ≤ 300kHz

Contextual Info: TOSHIBA TC58257AP/AF-20, -25 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY Description Th e T C 5 8 2 5 7 A P /A F is a 3 2 ,7 6 8 w o rd x 8 bit electrically ch ip erasable p ro g ra m m a b le read only m e m o ry m o ld e d in a 2 8 -p in

BL5373

Abstract: RS5C372
Contextual Info: 上海贝岭股份 上海贝岭股份有限公司 股份有限公司 BL5373 BL5373 用户手册 Shanghai Belling Co., Ltd. 低功耗实时时钟芯片 RTC 低功耗实时时钟芯片(RTC)BL5373 (RTC)BL5373 用 户 手 册 v 1. 0 ( 20102010-7-8) 上海贝岭股份有限公司

Contextual Info: m ICWORKS UJ30C516 ZOOMDAC DSP-BASED MULTIMEDIA RAMDAC PRELIMINARY, SEPTEMBER 1994 8 ,15» 16 or 24 bit-per-pixel modes -XGA™ , HICOLOR™, TARGA™ - Pixel-by-Pixel mode switching Oa-Chlp Voltage Reference Software-readable output sense Device and manufacturer ID

Contextual Info: IS93C46 '. d ISSI i 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM WITH 2V READ CAPABILITY FEATURES PRELIMINARY August 1990 PIN CONFIGURATIONS • State-of-the-Art Architecture — Non-volatile data storage — Single supply - 5V operation — Full TTL compatible inputs and outputs

Contextual Info: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.

MMA845x

Abstract: Wearable Heart Rate Monitor FXOS8700CQ MMA955X MPY8600DK6T1
Contextual Info: TM August 2013 • Freescale Sensors Overview • Freescale Sensor Portfolio − Linear Inertial Sensors - Accelerometers − Linear Inertial Sensors - Intelligent Sensor Hub − Rotational Inertial & Magnetic Sensors - Gyro & Magnetometers − Pressure Sensors