400MI1 Search Results

Contextual Info: CII U C J I N O I O C U 512K x 8 Asynchronous GS74108J/TP 8/10/12/15,3.3V GS74108J/TP Center Power Center Ground Features Functional Description • Fast access time: 8, 10, 12, 15ns. • Low Operating Current - 150/125/110/90 mA at minimum cycle time. • Single 3.3V +10%/-5% power supply.

Contextual Info: MITSUBISHI LSts M 5 M 4 4 1 7 0 A J ,L ,T P ,R T - 6 ,- 7 ,- 8 ,- 1 0 JM 1 o m 2 FA S T PA G E MODE 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D B Y 16-BIT DYN AM IC RAM '9 0 D E S C R IP T IO N - 12-0 8 PIN C O N FIG U R A T IO N (TOP V IEW } This is a family of 2 6 2 1 4 4 -w o rd by 16-bit dynamic RAM s.

KM48V2104B

Abstract: KM48C2104B
Contextual Info: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)

Contextual Info: mH Y II II VI A I HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 2,097,152

Contextual Info: Preliminary KMM377S823BT1 SDRAM MODULE KMM377S823BT1 SDRAM DIMM Intel 1.0 ver. Base SMx72 SDRAM DIMM with PLL & Register based on 8Mx8,4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S823BT1 is a 8M bit x 72 Synchronous