400 1200V SCR Search Results

SCR 200A 500V

Abstract: 50A 1200V SCR CYNA25
Contextual Info: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR

DI 762

Abstract: 4500a NTE5381 1200v scr 300A 1200V SCR induction heating induction heating circuits low voltage scr SCR 100A 1200V SCR Gate Drive
Contextual Info: NTE5381 Silicon Controlled Rectifier SCR for High Speed Switching, 1200V, 400 Amp, TO200AB Features: D High di/dt with Soft Gate Control D High Frequency Operation D Low Dynamic Forward Voltage Drop D Low Switching Losses at High Frequency Applications:

50A 1200V SCR

Abstract: CYNA25
Contextual Info: POWER COMPONENTS > Suitable for General Purpose AC Switching > IGT 40mA Max. Applications • Motor Control • Overvoltage Crowbar Protection • Capacitive Discharge Ignition > Isolated and Non-Isolated Tab > VDRM/VRMM 400, 600, 800, 1200V • Voltage Regulation

TOSHIBA THYRISTOR

Abstract: thyristor 80A, 1200V
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39C 02324 Bl-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA { DI SCRET E/ OP TO } 3T 1200V 80A SM80Q13 DE^iO^SO □□□23S4 □ ( 3) : ' Í.6MAX. MAXIMUM RATINGS SNM BOL C H A RA C TERISTIC RATING 400 Repetitive Peak SM80G13

JFET semisouth

Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1200R063

Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

2N19K

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Amp RMS SCRa Major Raring* and Characteristic] 'TIHM!) 'TIAVI »TC 7O- 70* 70- SB1 82' 85- ITSU «50Hi 9GE 1,000' 965 1,000- 905 1,000* |2t

ASJE1200R100

Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

JFET semisouth

Abstract: SEMISOUTH SiC JFET
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

FD400R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

FZ800R12KF4

Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

FD600R12KF4

Abstract: G1 TRANSISTOR
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

G1 TRANSISTOR

Abstract: FD600R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

FZ1200R12KF4

Abstract: IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

IGBT FF 300 r12

Abstract: FF400R12KF4
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

FD600R12KF4

Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1

8DB0056-001

Abstract: TAG 203 350 TLU 315 RS63H neutral link RS20HWH 5SE200 NS16M20 TLU800 F076802 RSL63H
Contextual Info: Fuse Links Safeclip Fittings RS Fittings Identification & Selection Chart 153 Industrial Fuse Links BS88 Clip-in BS88 Bolt-in 415 - 660V DIN Ferrule 500/660V DIN NH 500/690V DIN Bottle 500V UL North American Miniature M205 & 3AG 156 158 175 176 179 184 172

FF600R12KF4

Abstract: FF 150 R 1200 kf igbt IC600A
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

2N2024 JAN

Abstract: 2N1909-16 CUBF 2N2023-30 F20JC 2N2027 JAN 2N2030 JAN 2N1792 2N1804 2N1807
Contextual Info: Data Sheet No. PD-3.082 INTERNATIONAL RECTIFIER I R 2N1792, 21X11805, 21X11909, 2N2023 SERIES HOAm p RMS SCRs Major Ratings and Characteristics 't r m s 70 - 'T (A V ) @ TC |JSM 50 Hz @ 60 Hz |2 t @ 50 Hz @ 60 Hz <GT dv/dt d i/d t Tj 70* 70* A 65 *

IC 7800

Abstract: IGBT FZ 1200 r12 FZ1200R12KF4 fz1200r12
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be

1200V

Abstract: UV diode 200 nm emitter 150RA-120
Contextual Info: 7MBP 150RA-120 IGBT IPM 1200V 6x150A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

Contextual Info: Bulletin I2107 40TPS. SERIES PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 400A VR/ VD = 1200V Description/Features The 40TPS. new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The

AA65N14A10

Abstract: aa65n14 Solidtron SCR 3KA KA NMOS RG-47 MOS-Controlled Thyristor
Contextual Info: SMCT AA65N14A10 Advanced Pulse Power Device N-MOS VCS, TO-247 Description Package This voltage controlled Solidtron VCS discharge switch utilizes an n-type MOS-Controlled Thyristor mounted in a five leaded TO247 plastic package. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with