40 S 24 Search Results

Contextual Info: HI5746 HARRIS S E M I C O N D U C T O R 10-Bit, 40 MSPS A/D Converter August 1997 Description Features Sampling R a t e . 40 MSPS 8.8 Bits at f|N = 10MHz Low Power at 40 M S P S . 225mW

Contextual Info: G M M 7 401000B S /B S G -60/70/80 GoldStar 1,048,576 WORDS x 40 BIT G M M 740200 0 B S /B S G -6 0 /7 0 /8 0 2,097,152 WORDS x 40 BIT GOLDSTAR ELECTRON CO, LTD. CMOS DYNAMIC RAM MODULE Description Features The GMM7401000BS/BSG is a 1M x 40 bits dy­ namic RAM MODULE which is assembled 10

LT 7238

Abstract: TMS320LC546A TMS320LC545A
Contextual Info: TMS320C54X, TMS320LC54x FIXED-POINT DIGITAL SIGNAL PROCESSORS S P R S 0 39 A -F E B R U A R Y 1996 - REVISED JULY 1997 40-Bit Arithmetic Logic Unit ALU Including a 40-Bit Barrel Shifter and Two Independent 40-Bit Accumulators 17- x 17-Bit Parallel Multiplier Coupled to a

Contextual Info: 2 Way-0° Power Splitter/Combiner PSC-2-1+ Typical Performance Curves Isolation 20 3.1 22 3.2 24 3.3 26 Isolation dB Insertion Loss (dB) Insertion Loss 3.0 3.4 3.5 3.6 3.7 28 30 32 34 Insertion Loss S-1 3.8 36 Insertion Loss S-2 3.9 38 4.0 40 40 80 120 160

LM98640

Contextual Info: LM 9 86 4 0Q M L LM98640QML Dual Channel, 14-Bit, 40 MSPS Analog Front End with LVDS Output Texa s In s t r u m e n t s Literature Number: SNAS461B t Semiconductor LM98640QML Dual Channel, 14-Bit, 40 MSPS Analog Front End with LVDS Output General Description

n373

Contextual Info: TCM38C17 QCombo FOUR-CHANNEL QUAD PCM COMBO S L W S 0 40 - J U N E 1996 Single 5-V Supply DGG PACKAGE (TOP VIEW) R B IA S [ Reliable Submicron Sillcon-Gate CMOS Technology Low Power Consumption (per Channel) - Operating Mode. . . 40 mW Typical - Power-Down Mode. . . 1 mW Typical

SUM110P04-05

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

STFJ430

Contextual Info: A POW ERHOUSE MOSFETS N C H A N N E L POW ER M O S FE TS r DS ON PACKAGE T0213AA •d m p u l s e DRAIN CURRENT AMPS BV d s S VOLTS @ 0.5 ' d OHMS ■d Continuous AMPS STFJ120 100 0.3 8.0 32 40 STFJ130 100 0.18 12.0 40 50 STFJ140 100 0.085 15.0 60 70 STFJ220

TC4009UBR

Contextual Info: TC4008BP DYNAMIC ELECTRICAL CHARACTERISTICS Ta=25°C, V S s=OV, CL= 50P F CHARA C T E R I S T I C SYMBOL MIN. TEST COND I T I O N V DD TYP. MAX. 80 200 UNIT (V) 5 _ 10 - 50 100 15 _ 40 80 5 _ 80 200 10 - 50 100 - 40 80 Output Tr a n s i t i o n Time (Low to High)

Contextual Info: A D C 10040 ADC 10040/ADC 10040Q 10-Bit, 40 MSPS, 3V, 55.5 mW A/D Converter Texa s In s t r u m e n t s Literature Number: SNAS224L a l ADC10040/ADC10040Q Q w S em ico n d u cto r 10-Bit, 40 MSPS, 3V, 55.5 m W A /D Converter General Description Features The ADC10040 is a monolithic CMOS analog-to-digital con­

Contextual Info: IBI I I File No. 1 C K G -61 01 -X X X X -T S SHEET 1 / 1 SP E C IF IC A T IO N S Current Rating:0.4A Voltage Rating:50V AC/DC Contact Resistance:40 Milliohms Max. Insulation Resistance:10 0 M egohm s Mion. Contact Retention:0.2N/pin Max. Operating Temperature:— 40‘C ~ + 8 0 ‘C 5Cycles

Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: 4 b 4 47GÜ HU T S O N I N D U S T R I E S HUTSON INDUSTRIES □□0DE11 3 I RIAC’s PRESS FIT SERIES ELECTRICALLY ISOLATED TRIACS 30 AMPERE CENTER GATE 40 AMPERE CENTER GATE if firm iiiiìiìiriifirTi nr r ~ tâSÈÉÊÊSmm Hutson’s 30-Amp and 40-Amp -triacs are packaged in an

Contextual Info: MOS INTEGRATED CIRCUII /¿PD16304 40 bit VACUUM FLUORESCENT DISPLAY DRIVER CMOS LSI DESCRIPTION The /¿PD16304 is high vo lta g e d riv e r utilize d h ig h vo ltag e CMOS process fo r Vacuum F luorescent D isplay. The/¿PD16304 consists o f a 40 b it s h ift registe r 20 b it s h ift registe r X 21, 40 b it latch, and high vo lta g e CMOS

Si4565ADY-T1-E3

Abstract: Si4565ADY-T1-GE3
Contextual Info: Si4565ADY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 0.054 at VGS = - 10 V - 4.5 0.072 at VGS = - 4.5 V - 3.9 VDS (V) N-Channel P-Channel 40 - 40 Qg (Typ.)

SI4561DY

Abstract: Si4561DY-T1-E3 Si4561DY-T1-GE3 si4561
Contextual Info: Si4561DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a RDS(on) (Ω) 0.0355 at VGS = 10 V 6.8 0.0425 at VGS = 4.5 V 6.2 0.035 at VGS = - 10 V - 7.2 0.047 at VGS = - 4.5 V - 6.2 Qg (Typ.)

mosfet equivalent

Contextual Info: Si7848BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.009 at VGS = 10 V 47 0.012 at VGS = 4.5 V 40 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

J254

Contextual Info: HIGH DENSITY RIGHT ANGLE, P.C.B. D-SUB ORDERING CODE PDI - Pl5 l r s l H - n NUMBER OF PINS GENDER =15 =26 =44 =62 MALE FEMALE FOOT PRINT LENGTH MATING FACE - ITI iHl I =S =R 11.62mm = BLANK 5.34mm =5 4 -40 THREADED T H R F A n mRIVET r iv ft 4-40 - b la n k

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM540100 Series 1M x 40-bit C M O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM540100 is a 1M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY514400A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22/uF decoupling capacitor is mounted for each DRAM.

Contextual Info: S IE M E N S Extended PCM Interface Controller EPIC-1 PEB 2055 CMOS IC Preliminary Data Type Ordering Code Package PEB 2055-C Q67100-H6034 C-DIP-40 PEB2055-N Q67100-H6035 4H.-CC-44 (SMD) PEB 2055-P Q67100-H6036 P-DIP-40 I I Information from subscriber lines needs to be transferred to time slots on system inter­

Contextual Info: PHE820MF6680KR06L2 aka F720FM684K275C Capacitor, film, 0.68 uF, +/-10% Tol, -40/+100C, Safety: X2, 275VAC, Lead Spacing=27.5 mm T L H F LL S Dimensions mm Specifications ID Dimension Tolerance L H T S LL F 31.5 24.5 14.5 27.5 6 0.8 max max max +/-0.4 nom

Contextual Info: 4 Way-0° Power Splitter/Combiner JS4PS-1W+ Typical Performance Curves Insertion Loss Insertion Loss S-1 vs. TEMPERATURE 5.0 5.0 Insertion Loss S-1 5.5 @ -40°C 5.5 Insertion Loss S-2 Insertion Loss S-3 Insertion Loss S-4 6.5 7.0 7.5 8.0 @ +85°C 6.5 7.0 7.5