4.7K Search Results

2SC3900

Abstract: EN3292
Contextual Info: Ordering number : EN3292 FC 138 NPN Epitaxial P lanar Silicon Composite Transistor Switching Applications with Bias Resistance F eatu re s •On-chip bias resistance (R1 = 4.7kQ) • Composite type with 2 transistors contained in the CP package currently in use, im proving the

XS marking code

Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kQ JL TT BCR 569 XLs Pin Configuration UPON INQUIRY 1=B Package 2= E o Marking Ordering Code II co Type IT

519 MARKING CODE

Abstract: 519 SOT23
Contextual Info: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7k£2 FI nr let Ordering Code Pin Configuration XKs UPON INQUIRY 1=B Package m Marking BCR 519 fO II Type 3=C

Contextual Info: Ordering number : EN3290 _ No.3290 r FC 136 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance F eatures • On-chip bias resistance (RX = 4.7kfl) • Composite type with 2 transistors contained in the CP package currently in use, improving the

KSR1001

Abstract: KSR2001
Contextual Info: KSR1001 KSR1001 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to KSR2001 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit

2SC4133

Abstract: 2SA1591 C4133
Contextual Info: I Ordering num ber: E N 2 5 1 5 2SA1591/2SC4133 PNP/ NPN EpitaxialPlanarSiliconTransistors S A X Y O i Switching Applications _ with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri=4.7kO,R2=47kO)

BF190

Abstract: DRA2143T
Contextual Info: DRA2143T Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DRA2143T C Product type: Transistor with Built-in Resistor PNP R1 B E Parameters *$ .SUBCKT DRA2143T E B C R_R1 B IN 4.7k Q_Q1 C IN E QN1 .MODEL QN1 PNP + IS=20.000E-15 + BF=190

980020-48-P2

Abstract: 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et
Contextual Info: SCH-VAL313x-01 01 NXP Semiconductors LPC313x Validation Board Schematics 1 05 Initial release 09/29/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1 & GPIO2 to 4.7k; sht 7 01/22/09 04 Tie LPC313x pin K11 to SUP3;

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR112W

Abstract: VSO05561
Contextual Info: BCR112W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323

KSR1201

Abstract: KSR2201
Contextual Info: KSR1201 KSR1201 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR2201 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

1N4148

Abstract: 2N3904 2N3906 E200II E2202C
Contextual Info: Endicott Research Group, Inc. 3 Dimming Options E2202C 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com 5% - 100% +Vin Specifications and Applications Information 4.7K Ω approx. 1.5 ms* * should be selected to be compatible with

Contextual Info: BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 569 XLs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

Contextual Info: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR1201 TO-92S ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Contextual Info: KSR2009 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to KSR1009 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

FJX3009R

Abstract: FJX4009R
Contextual Info: FJX3009R FJX3009R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJX4009R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit

FJX3009R

Abstract: FJX4009R
Contextual Info: FJX3009R FJX3009R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJX4009R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit

DSA0037426

Contextual Info: SEMB3 PNP Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 = 4.7kΩ)

FJX3001R

Abstract: FJX4001R S51B
Contextual Info: FJX4001R FJX4001R 3 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJX3001R 2 1 SOT-323 1. Base 2. Emitter 3. Collector

si2301

Abstract: ms6308 SPL10A sunplus mp3 FM17 SPL10A4 RT9266CE usbdm RT9266 SEG22
Contextual Info: 1 2 3 4 5 6 R42 VDDADC D R3 10K IOCD0 IOCD1 IOCD2 IOCD3 60 1 2 3 4 UI_STB 5 IOEF0 IOEF1 IOEF2 IOEF3 IOEF4 IOEF5 6 7 IOAB0 IOAB1 8 9 10 11 12 13 14 15 16 17 103 R32 1K 103 R19 C30 100K 390P C29 Bead ADCGND R33 4.7K C4 57 104 MIC1 103 2.2nF C18 47uF VDD_LCD

Contextual Info: FJV4101R FJV4101R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV3101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

Contextual Info: KSR2005 KSR2005 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1005 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: FJNS4201R FJNS4201R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJNS3201R TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor