4-071 TRANSISTOR Search Results

Contextual Info: 0 OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .0 3 6 ( 0 . 9 1 .02 4 ( 0 . 6 1 ) I 3 à -024 ( 0 .6 1 ) .01 6 ( 0 . 4 1 ) J * .0 7 8 (1 .9 6 ) .0 2 3 ( 0 . 5 6 ) .071 .03 9 ( 0 . 9 9 )

PT-8502

Abstract: 2N5928 TO114 D741D 350w dc motor Powertech DDGQ310 PT8502 LJ15 PT850
Contextual Info: 17E D • 72^071=4 GDGDBCH b POÜJERTECH INC “BIG IDEAS IN BIG POWER" ■ ■ ■ PowerTech -p ■ 150 AMPERES 2N592B PT-B502 SILICON IN IPINI TRANSISTOR FEATURES: v C E s a t . 1.0 V 100 A V B E . 2.0 V @ 100 A

2N7000

Abstract: HCT7000M HCT7000MTX HCT7000MTXV
Contextual Info: 0 . OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .036 0 .9 I .024 (0 .6 l ) I 3 .023 (0.5a) .078 t I .98) .071 (1.80) .0 3 9 (0.99) .0 3 5 (0.88) (0 .4 3 ) 3 T o r a in •JE

sb 050 D 331

Abstract: Transistor sb 050 D
Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3

intel 945 motherboard schematic diagram

Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
Contextual Info: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4

Victory Engineering Thermistor

Abstract: VECO Thermistor victory engineering corporation VECO thermistors Victory Engineering
Contextual Info: VICTORY ENGINEERING COR 74C 0 / 1483075 0Q00704 071 T-H-2S- VICTORY ENGINEERING CORPORATION VI CT ORY ROAD, P.O. BOX 559, S P R I N G F I E L D , NEW J ERSEY 07081 T W X : 7 1 0 -3 3 3 -4 -4 3 0 TEL: 201 • 3 7 3 -5 3 0 0 V E C O T E C H N IC A L B U L L E T IN M SV111

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SMALL SIGNAL SILICON TRANSISTOR

2N4261 equivalent

Abstract: 2N4261 2N4261UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SMALL SIGNAL SILICON TRANSISTOR

MICROSEMI 2N2907A

Abstract: 2N2907A surface mount 2N2907AUB equivalent 2N2907A 2N2906AUBC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2907A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

2N2484UB

Abstract: 500ADC 2n2484 equivalent 2N2484UA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON LOW POWER TRANSISTOR

2N2906AUBC

Abstract: 2n2907aub equivalent 2N2907A 2n2907a IC tl 495 325 MMC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL

2SK1407

Abstract: transistor tt 2141
Contextual Info: N "7 > V 7 s$ /Transistors 9QK1dA7 I "*W 2SK1407 1 £ ^ hemt Low Noise High Electron Mobility Transistor f • fl-J fi\H £ 0 /D im e n s io n s Unit: mm 2SK1407 l i , MBE (Molecular Beam Epitaxy) t i t HEM TT i T to >/•?— % £ L T fS ¡SIC 12GHzDBS

2SK1407

Contextual Info: ROHM CO LTD 4DE D • 7 0 2 f l cm OGQhMMb 2 B R H M h 7 > v X £ /Transistors 2SK1407 ‘ 2SSC1407 Low Noise High Electron Mobility Transistor • 2SK1407 i , ~ 7 ^3 / ~ 2 S ' \f iiH /D im e n s io n s (Unit: mm M BE (Molecular Beam Epitaxy) H E M T T -fo

TL 2N2222A npn transistor

Abstract: MICROSEMI 2N2222A MICROSEMI 2N2222Aub 2N2222AUB MMC 325 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2222A
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL

Contextual Info: TARGET DATA SHEET ECM051 4 X 4 mm Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM051 is a 10 signal pin 4 X 4 mm dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide Heterojunction Bipolar Transistor HBT process. It is optimized for cellular CDMA (digital) and AMPS

2N2369AUBC

Abstract: 2N2369AU
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON TRANSISTOR

14DK471

Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and

ERZC14DK911

Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and

multispring

Abstract: ASTM-B16 MIL-T-10727
Contextual Info: M55-S-NPS Final 10-08:M55 -NPS final revise 8-08 11/20/08 9:23 AM Page 4 MICRO MICROJACKS PINS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors,

Contextual Info: Central' Semiconductor Corp. CXT5551 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

mdd 1051

Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Contextual Info: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY

Contextual Info: Central C BCX68NPN C B C X 6 9 PNP semiconductor Corp. SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR CBCX68, CBCX69 types are complem entary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount

SOT363-6

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT3904 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Marking: K6N Plastic-Encapsulate Transistors

H118

Contextual Info: Central Semicon ftuetor Corp. CXT5551 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications,