4 JN Search Results

IR 9530

Abstract: F 9530 N
Contextual Info: co A3 o o 9 4 9 0 0 8 -Î COMHE JN0/0UE cy T cn N O T lCE D ' U T I L I S A T I O N o fS 75 8 9 9 50 0 EMPREINTES .• C O T E S SELON TABLEAU Cf-OESSOUS 1- 9 4 9 4 9 7 - 7 CIRCL1P 1 -9 4 9 4 9 7 -6 AXE 1 -9 4 9 4 9 7 -8 AXE I -3 4 9 4 9 7 -9 CIRCL IP 9 4 9 0 T0 —I

Contextual Info: RELEASED FOR PUBLICATION JNPUBLISHEO. r TYCO ELECTRONICS CORPORATION. R E V IS IO N S L RIGHTS RESERVED. CM 00 DESCRIPTION REV PER ECO—07—003704 MATERIAL: 71.1 2 [ 2 . 8 0 0 ] 28 5 -6 4 0 4 4 0 -8 YES 68.58[2.700] 27 5 -6 4 0 4 4 0 -7 YES 66.04[2.600]

t5899

Abstract: L2304
Contextual Info: co A 3 o o 9 4 9 0 0 8 -Î COMHE JN 0/0U E cy T cn N O T l CE D ' U T I L I S A T I O N o fS 75 8 9 9 500 E M P R E IN T E S .• C O T E S S E L O N TABLEAU C f-O E S S O U S 1- 9 4 9 4 9 7 - 7 CIRCL1P 1 -9 4 9 4 9 7 -6 AXE 1 -9 4 9 4 9 7 -8 AXE I -3 4 9 4 9 7 -9

71649

Abstract: berg din n6f4 10-PM
Contextual Info: I I I I f i l l i SEE NEXT SHEETS P.C. MOUNTINC HOLE PATTERN 7 8 .7 4 - ^ m 178.741 2 .5 4 1 T t T f T f T r T r T r T f T r T r T r T r T r T r T r T f 5 + + 4- 4- 4 - 4 - 4- 4- 4- 4 - + 4- 4 - 4- + 4 - 4- 4 - 4 - + + 4 - 4 - 4 - 4 - 4 - + 4 - + 4 - * * -

524G

Contextual Info: mm Numeric Display /JN 2 Digit 11.0mm . 4 ” Series T y p e No. L ig h tin g C o lo r L N 5 2 4 R A M R .R e d L N 5 2 4 R K M R .R e d L N 5 2 4 G A M G .G re e n L N 5 2 4 G K M G .G re e n

Contextual Info: -'jn n n n - {P8> -«rrrr^-js r rrr ^ - -4 r r r n - -4 r r m /•■V. - -«rrrr^- / •\_ -«nrrr^- ÌP2 - -mrrrr^- ELECTRICAL SPECIFICATIONS: 1,0 INDUCTANCE P l- J l) I (P 3 -J 3 ) I ( P 4 -J 4 ) I (P 7 -J 7 ) 2.0 I 65 uH TYP @,05V, lOKHz DC RESISTANCE

Contextual Info: a* a> » c/i Component Specifications: Optical Characteristic_ _ _ _ _ _ P sm w Wavelength ol Operation Un m 1550 1580 nm 4 .0 20 -45 4 .5 dB tffi •40 dB Jn iu i Mu Unit 4 .2 5 .6 4 .5 6 .0 V 6 .5 7.0 V 50 50 •1 0 n dB dBm Min 1520 Insertion Loss ol Device

V7040

Abstract: sony v7040
Contextual Info: 1 1 m te < Uï © 1 i + + i— * -J cri ai r i rf • • t • • s ^ T >1 o* n: > > >É O ] 1 p ' Si =E . 5îu V X W- 4 i* # to 00 ai 4 i ■ jNr 3 t+ S *F ^ u"C < /, F “-L •“í ^pa cr •fr YZ $ 4 4 ¿fe H ir W *c Cs3 5Í =. 4 Í ot/ ki £ ' H

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

SSF-LXH306USBD-TR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSF-LXH306USBD-TR 4 ,5 7 [0,180] 4,95 [0,195] J ELECTRO-OPTICAL CHARACTERISTICS Ta =25T PARAMETER MIN PEAK WAVELENGTH TYP 4-70 FORWARD VOLTAGE REVERSE VOLTAGE MAX \ ,/jNITS TEST COND nm I \ 4-.0 5.0 Vf Vr mcd 2x thetn

Contextual Info: GENNUM C O R P O R A T I OISJ M u M B E W G F 910 5 Component Digital Transcoder DATA SHEET FEATURES DEVICE OVERVIEW multiple format conversions from one device 4:2:2:4 <-> 4:4:4:4 4:2:2:4 <-> R/G/B/KEY 4:2:2:4 <-> Y/U/V/KEY Y/U/V/KEY <-> R/G/B/KEY 4:4:4:4 <-> R/G/B/KEY

LCM-544

Abstract: tf s 544 10KO LCM544 tf s 544 a
Contextual Info: PÂO< - 3 As> GoALPOL C M -5 4 4 ,5 1 3 2 4 0 3 c ¥ X 4 f f K > 2 -7 x -X £ '> & m ABSOLUTE MAXIMUM RATINGS ^ ; .a y v à £2 Symbol s . Item » * s. Pavwf supply for logic m n V 7 « S *Œ -X* ,:-x :-;K M - m * EE S K ; Jnjjut vottaga '-.'ft Voo-Vss •

b1393

Abstract: Stud bolts V42254-A221G-B231 CI 555 socket V42254-A2219-B231 V42254-A2 v42254-a2115-b225 V42254-A2212-B215 D-Sub 9 pol 90 V42254-A2141-B209
Contextual Info: I Sta ndardausfüh rung! standard type: I V4225 4- A 2 41 5 - B * * * V4225 4- A 2 41 1 - B * * * V4225 4- A 2 51 5 - B * * * V 4 2 2 5 4 - A2511-B* V 4 2 2 5 4 - A 2115-B* V 4 2 2 5 4 - A 2111-B* V 4 2 2 5 4 - A 2315-B* V 4 2 2 5 4 — A 2 3 1 7 — B*

Contextual Info: - 'jn n n n - {P8> -«rrrr^-jsrrrr^-4 rrrn - ÌP2 - -4 rrm - /•■V. -«rrrr^- /•\_ -« n rrr^ - -mrrrr^ - ELECTRICAL SPECIFICATIONS: 1,0 INDUCTANCE P l - J l) I (P 3 -J3 ) I ( P 4 -J4 ) I (P 7 -J7 ) I 65 uH TYP 6,01V, lOKHz 2.0 DC RESISTANCE P 8 -J8

wm-62 F

Contextual Info: !" # $ %& '& * !" +'' % / 4, . . $ $ , $ - 2 . % $ - % . 4 $ $ -$ $ - 2 $ / 4 & , % $ % . & / & 5 , 5 , $ -$ 5 , 8 % 5 4+ . -/ 9 57 2 #''3 - /$ &-& /= - % , %& ' - . - . $ - : % 4 /; . & $ *+ ,- ./ 1 - 2 3 5&22 $ 0@ /< #) # 2 # / < -$ 12+ #' $ - : -/ % /

7400A

Abstract: S889A
Contextual Info: TMS416400A, TMS417400A T M S 4 2 6 4 0 0 A , TMS 4 26 4 00 A P, T M S 4 2 7 4 0 0 A , T M S 4 2 7 4 0 0 A P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S SMKS889A-AUGUST 1 9 9 6 -REVISED FEBRUARY 1997 This data sheet is applicable to all TMS41x400As

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

"Pyroelectric Detector"

Abstract: eltec pyroelectric amplifier circuit DS400 LR emi filter Pyroelectric Detectors eltecdata
Contextual Info: Model 400 Single Element UV/Vis/IR Pyroelectric Detector EL.TEC M anufactured under one or m ore of th e following U .S . patents: 3 ,8 3 9 ,6 4 0 - 4 ,2 1 8 ,6 2 0 - 4 ,3 2 6 ,6 6 3 - 4 ,3 8 4 ,2 0 7 - 4 ,4 3 7 ,0 0 3 - 4 ,4 4 1 ,02 3 - 4 ,5 2 3 ,0 9 5 Model 400 consists of a single

Contextual Info: DRAWING MADE 4 JN THIRD ANGLE PROJECTION

74fct2245

Contextual Info: QUALITY Q SEMICONDUCTOR High Speed CMOS 8-Bit Transceivers INC. Q S 5 4 /7 4 F C T 2 4 5 Q S 5 4 /7 4 F C T 6 4 0 Ä Q S 5 4 /7 4 F C T 2 2 4 5 Q S 5 4 /7 4 F C T 2 6 4 0 F E A T U R E S /B E N E F IT S • Pin and function compatible to the 74F245/640 74 FCT245/640.

LS145

Abstract: SN74145 75163 SN54145 SN54LS145 SN74LS145 SDLS051 LS 145
Contextual Info: SN 5 4 1 4 5 , S N 5 4 L S 1 4 5 , S N 7 4 1 4 5 , S N 7 4 L S 1 4 5 BCD TO D E C I M A L DEC ODE RS/DRIVERS SDLS051 MARCH 1974 - REVISED MARCH 1988 FOR USE AS LA M P , R E L A Y , OR MOS D R IV E R S S N 5 4 1 4 5 , S N 5 4 L S 1 4 5 . . . J OR W PACKAGE

Contextual Info: HB56UW472EJN Series, HB56UW464EJN Series HB56UW472EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 4 k Refresh, 1-Bank Module 18 pcs of 4 M X 4 Components HB56UW464EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4 k Refresh, 1-Bank Module (16 pcs of 4 M X 4 Components)

4134 mosfet

Abstract: Power MOSFET 50V 20A mosfets MOSFET 200v 20A n.channel POWER MOSFET Power MOSFETs MOSFET 50V 100A mosfet HRF3205 Mosfet 100V 50A N_CHANNEL MOSFET 100V MOSFET
Contextual Info: Jn tefsil N-Channel Standard Gate Power MOSFETs 4 Power MOSFET Products PAGE N-Channel Test Circuits and W aveform s. 4-3 BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET.