4 JN Search Results

IR 9530

Abstract: F 9530 N
Contextual Info: co A3 o o 9 4 9 0 0 8 -Î COMHE JN0/0UE cy T cn N O T lCE D ' U T I L I S A T I O N o fS 75 8 9 9 50 0 EMPREINTES .• C O T E S SELON TABLEAU Cf-OESSOUS 1- 9 4 9 4 9 7 - 7 CIRCL1P 1 -9 4 9 4 9 7 -6 AXE 1 -9 4 9 4 9 7 -8 AXE I -3 4 9 4 9 7 -9 CIRCL IP 9 4 9 0 T0 —I

71649

Abstract: berg din n6f4 10-PM
Contextual Info: I I I I f i l l i SEE NEXT SHEETS P.C. MOUNTINC HOLE PATTERN 7 8 .7 4 - ^ m 178.741 2 .5 4 1 T t T f T f T r T r T r T f T r T r T r T r T r T r T r T f 5 + + 4- 4- 4 - 4 - 4- 4- 4- 4 - + 4- 4 - 4- + 4 - 4- 4 - 4 - + + 4 - 4 - 4 - 4 - 4 - + 4 - + 4 - * * -

Contextual Info: -'jn n n n - {P8> -«rrrr^-js r rrr ^ - -4 r r r n - -4 r r m /•■V. - -«rrrr^- / •\_ -«nrrr^- ÌP2 - -mrrrr^- ELECTRICAL SPECIFICATIONS: 1,0 INDUCTANCE P l- J l) I (P 3 -J 3 ) I ( P 4 -J 4 ) I (P 7 -J 7 ) 2.0 I 65 uH TYP @,05V, lOKHz DC RESISTANCE

V7040

Abstract: sony v7040
Contextual Info: 1 1 m te < Uï © 1 i + + i— * -J cri ai r i rf • • t • • s ^ T >1 o* n: > > >É O ] 1 p ' Si =E . 5îu V X W- 4 i* # to 00 ai 4 i ■ jNr 3 t+ S *F ^ u"C < /, F “-L •“í ^pa cr •fr YZ $ 4 4 ¿fe H ir W *c Cs3 5Í =. 4 Í ot/ ki £ ' H

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: GENNUM C O R P O R A T I OISJ M u M B E W G F 910 5 Component Digital Transcoder DATA SHEET FEATURES DEVICE OVERVIEW multiple format conversions from one device 4:2:2:4 <-> 4:4:4:4 4:2:2:4 <-> R/G/B/KEY 4:2:2:4 <-> Y/U/V/KEY Y/U/V/KEY <-> R/G/B/KEY 4:4:4:4 <-> R/G/B/KEY

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 6 4 4 4 1 -A 7 5 , 4 5 6 4 8 4 1 -A 7 5 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD4564441-A75, 4564841-A75 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4 and 2,097,152 x 8 x 4 word x bit x bank , respectively.

7400A

Abstract: S889A
Contextual Info: TMS416400A, TMS417400A T M S 4 2 6 4 0 0 A , TMS 4 26 4 00 A P, T M S 4 2 7 4 0 0 A , T M S 4 2 7 4 0 0 A P 4 1 9 4 3 Q 4- W O RD BY 4-BI T H I G H - S P E E D D R A M S SMKS889A-AUGUST 1 9 9 6 -REVISED FEBRUARY 1997 This data sheet is applicable to all TMS41x400As

LS145

Abstract: SN74145 75163 SN54145 SN54LS145 SN74LS145 SDLS051 LS 145
Contextual Info: SN 5 4 1 4 5 , S N 5 4 L S 1 4 5 , S N 7 4 1 4 5 , S N 7 4 L S 1 4 5 BCD TO D E C I M A L DEC ODE RS/DRIVERS SDLS051 MARCH 1974 - REVISED MARCH 1988 FOR USE AS LA M P , R E L A Y , OR MOS D R IV E R S S N 5 4 1 4 5 , S N 5 4 L S 1 4 5 . . . J OR W PACKAGE

lm 3178

Abstract: 433k 02A4 A02A dxo-1 ba 4818 fm TBA 315 kd 617
Contextual Info: 7591 -HOA06DD0K. 0BA=;=A8C4 ?4:0E 5JGTURJS z 48? jn`kZ_`e^ ZXgXY`c`kp z QlYd`e`Xkli\/ jkXe[Xi[ NA@ cXpflk z 4 Dfid ? , 4 Dfid A ZfekXZk XiiXe^\d\ek z UXj_ k`^_k Xe[ Dclo giff]\[ kpg\j XmX`cXYc\ z PfFQ , CJT Zfdgc`Xek AWQLHGM 0QQMLHGTLPOS ?ek`0k_\]k cfZb/ A\ekiXc [ffi cfZb

ln5340a

Abstract: ln5340 common cathode display ln5340am0.orange 7 seg display common anode common anode display LN534YAMY LN534YKMY ln5340am0
Contextual Info: mm Numeric Display /JN 3 Digit 11.0mm . 4 ” Series Pin No. A ssignm ent Unit: mm Assignm ent 1 Cathode e l Anode e1 2 Cathode d l Anode d1 3 L N 5 3 4 Y A M Y .A m b e r Common Anode 01 Common Cathode D1 4 Cathode d Anode c1

Contextual Info: - 'jn n n n - {P 8 > - « rrrr^ - js r r r r ^ - - 4 rrrn - ÌP2 - - 4 rrm - /•■v. - « rrrr^ - /•\_ - « n rrr^ -mr r r r ^ - ELECTRICA L SPECIFICATIONS: 1,0 INDUCTANCE P l - J l ) I (P 3 - J3 ) I ( P 4 - J4 ) I (P 7 - J7 ) 2.0 I 65 uH TYP 6,01V, lOKHz

2SK387

Contextual Info: r -m'Mmi : siw ^$m-x « 4-o-irwsoiAm °sm« ? 'vi A 4< v « < l “E h* r i v d- 4> Ì « SI v r * 38 m > £ jnsìl pi M FR Pf un *Q già S; r « « a fi v Sa vi >fr 50] >4 o CSD CTIo o & nu d o * » 3S Q a» 1! NJ uno n o •O-ì o co <n co co «T 3 O >-<

ls 7400

Abstract: 7400 ls 74LS00 CI 7400 74H00 CT7400 CT5400 CT54 a 741 j ITT 7400
Contextual Info: C T 5 4 /7 4 ,C T 5 1 /7 4 H , € 1 5 4 /7 4 8 ,0 1 5 4 /7 4 1 .8 P3 2 i l A ^ 1 h l C T 5 4 0 0 /C T 7 4 0 0 C T54SO O /C T 74SO O C T 5 4 H 0 0 /C T 7 4 H 00 C T 54LSO O /C T74LSO O ili 2 na V5) (JÌ (10) m n o t i ? « > , # # 5 4 . 7 4 00, W '74H 0 0 . 54 .' 74X00, fa54 74 t-S(H)K «•«*«&!$$

2SK1378

Abstract: 2-10P1B 250M
Contextual Info: m iìli EE aliii ' » $ ; * > r i a m i li r ^ 0 ) ^ » a a > 4 - a f i » S O H T ) naa^ Ih Vj; IO S ì d - 4 »} V 4 h- V ra 4HmS S 5 S w W o o w a> a O *-ì co co CO 03 -r P ? V Pii * Sn X s s& SS I <r jn tu ¥ V n » J *$ I v ffl < s vj m 4 H- V FR

mc14501

Abstract: TC4502BP 4502B MC14501UB TC4501BP MC14502 14502B MC14502B UPD4501BC CD4502
Contextual Info: 14 8 — — 4501 B Triple Gate Dual 4 Input NAND, 2 Input NOR/OR, 8 Input AND/NAND m m m y -b N A N D /N O R 4/2 4 u s m m 1 6 V DD "/ b I I J nj n K ~ A _ V ssS - m if m • 4 A ^ jN A N D y -h 2 tttN O R y -h , AW W ■ y - f - f c l J L - ’y x a v+v? m

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jU P D 4 5 2 5 6 4 4 1 , 4 5 2 5 6 8 4 1 , 4 5 2 5 6 1 6 3 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access

5D-9

Abstract: UJ 78A ck 78a ea79 KE72 bd 9h 5D_9
Contextual Info: {DCC;9HDF {78A; O6ME; O6ME; G^TU[ {,|uqu G^TU[ 4\ @QR[U FU]WbX \QbU`YQ[ {t|wqu 4\ {t|wqx 7\ {tywqu 4\ {tywqx 7\ {u|wqu 4\ {u|wqx 7\ {uywqu 4\ {uywqx 7\ {v|wqu 4\ {v|wqx 7\ {vywqu 4\ oyp {DICH;F ozp 6?B;F 7\ y{ HME; {,|uqxq, N {/|uqu 4\ {/|uquq, N |{ HME; 5D9@;H 6ME;

Contextual Info: Termination side 88x| 2.50 | =220 0,2 '*•' H O l 0.6 m I m i f li i f i f 4i i i ^ rs | Center line 4 -.4 1— + ~ 4 TO 41' [ " 'T 4 - 4-4 4-4 2,35 _*0.05 2,35 .*0.05 r^ 3 - B (224,88max.) Section C-C Front view A n 1 0.2 Detail "Y Position F IR S T ANGLE

MC14501UB

Abstract: TC4501BP UPD4501BC
Contextual Info: 14 8 — — 4501 B Triple G ate Dual 4 Input NAND, 2 Input N O R /O R , 8 Input A N D /N A N D m m m y-b N A N D /N O R 4/2 4 u s mm 1 6 VDD I I "/ b J nj n K ~ A_ V ssS - m x a v+ v? m if m • 4 A ^ jN A N D y -h 2 tttN O R y -h , AW W tr ■y - f - f c l J L - ’y

Contextual Info: 10 1 ME NOTES: A . IY W 3 A APPLY FOR CIRCUIT/2 =EVEN. Y l / \ - A t S Y C J T 7- (L C P ) YA jx YsW 4. 4 4 4 4 : 5 1 3 3 8 4 J - 4 U L 9 4 V — 0 CM) MATE WITH : 5 I338 SERIES. WAFER: LIQUID CRYSTAL POLYMER(GLASS FILLED) UL94V-0 (C0L0R:BLACK) Ct = 0 . 1 2 )

424170 NEC

Abstract: uPD424170 424170 upd42s4170 TOED101 UPD42427 293 ez 734
Contextual Info: \ m bM575a5 O P m ^ S 1» 137 w n e c e EET NEC MOS INTEGRATED CIRCUIT f /¿ P D 4 2 S 4 1 7 0 ,4 2 4 1 7 0 ,4 2 S 4 2 7 0 ,4 2 4 2 7 0 4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The /¿PD42S4170, 424170, 42S4270, 424270 are 262 144 words by 16 bits dynamic CMOS RAMs. The fast

Contextual Info: Preliminary W742C E 811 4-BIT MICROCONTROLLER Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4