4 GHZ TRANSISTOR Search Results

4 GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

4 GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
702 TRANSISTOR sot-23 Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331	PDF
mje 1303 Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100	PDF
BJT BF 331 Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018	PDF
014e1 Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
ha 1452 Amplifiers Abstract: 702 sot 23 100Z3 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	OCR Scan	NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3	PDF
AT-64020 Abstract: AT64020 AT-64023 Contextual Info: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk	Original	AT-64020 AT-64023 AT-64020 AT64020 AT-64023	PDF
mje 1303 Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000 Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000	PDF
mje 1303 Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680 Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X	PDF
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz	OCR Scan	AT-41472	PDF
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz	OCR Scan	AT-00535 35mfcro-X AT-00535	PDF
transistor bf 968 Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O	Original	NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968	PDF
HXTR-5103 Abstract: HXTR-5101 it 5001 HXTR-5001 S21E Contextual Info: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID	OCR Scan	HXTR-5001 HXTR-5001 HXTR-5103 HXTR-5101 it 5001 S21E	PDF
HMC530LP5E Abstract: HMC530LP5 530lp5 Contextual Info: HMC530LP5 / 530LP5E v05.0609 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E 25mm2 HMC530LP5 HMC530LP5E 530lp5	PDF

Contextual Info: HMC530LP5 / 530LP5E v01.0508 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E HMC530LP5 HMC530LP5E	PDF
Contextual Info: HMC530LP5 / 530LP5E v02.1208 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E HMC530LP5 HMC530LP5E	PDF
Contextual Info: HMC530LP5 / 530LP5E v07.0411 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E HMC530LP5 HMC530LP5E	PDF
Contextual Info: HMC530LP5 / 530LP5E v06.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E HMC530LP5 HMC530LP5E	PDF
Contextual Info: HMC582LP5 / 582LP5E v01.1208 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 11.1 - 12.4 GHz Fo/2 = 5.55 - 6.2 GHz Fo/4 = 2.78 - 3.1 GHz	Original	HMC582LP5 582LP5E HMC582LP5 HMC582LP5E	PDF
H582 Abstract: HMC582LP5E Contextual Info: HMC582LP5 / 582LP5E v00.0407 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 11.1 - 12.4 GHz Fo/2 = 5.55 - 6.2 GHz Fo/4 = 2.78 - 3.1 GHz	Original	HMC582LP5 582LP5E HMC582LP5 HMC582LP5E H582	PDF
Contextual Info: HMC512LP5 / 512LP5E v00.0407 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.6 - 10.8 GHz Fo/2 = 4.8 - 5.4 GHz Fo/4 = 2.4 - 2.7 GHz	Original	HMC512LP5 512LP5E HMC512LP5 HMC512LP5E	PDF
FM tuning capacitor Abstract: HMC512LP5E HMC512LP5 Contextual Info: HMC512LP5 / 512LP5E v03.0609 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.6 - 10.8 GHz Fo/2 = 4.8 - 5.4 GHz Fo/4 = 2.4 - 2.7 GHz	Original	HMC512LP5 512LP5E 25mm2 HMC512LP5 HMC512LP5E FM tuning capacitor	PDF
Contextual Info: HMC530LP5 / 530LP5E v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E 25mm2 HMC530LP5 HMC530LP5E	PDF
HMC530LP5E Abstract: HMC530LP5 Contextual Info: HMC530LP5 / 530LP5E v00.0407 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz	Original	HMC530LP5 530LP5E HMC530LP5 HMC530LP5E	PDF

4 GHZ TRANSISTOR Search Results

4 GHZ TRANSISTOR Result Highlights (5)

4 GHZ TRANSISTOR Datasheets Context Search

702 TRANSISTOR sot-23

mje 1303

BJT BF 331

014e1

transistor BF 697

ha 1452 Amplifiers

AT-64020

mje 1303

mje 1303

transistor bf 968

HXTR-5103

HMC530LP5E

H582

FM tuning capacitor

HMC530LP5E