4 GHZ TRANSISTOR Search Results
4 GHZ TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
4 GHZ TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor BF 697
Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
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NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 | |
mje 1303
Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
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NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X | |
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz |
OCR Scan |
AT-41472 | |
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz |
OCR Scan |
AT-00535 35mfcro-X AT-00535 | |
transistor bf 968Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O |
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NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968 | |
HXTR-5103
Abstract: HXTR-5101 it 5001 HXTR-5001 S21E
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HXTR-5001 HXTR-5001 HXTR-5103 HXTR-5101 it 5001 S21E | |
HXTR-2001
Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5
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HXTR-6001 HXTR-6001 HXTR-5001 HXTR-5002 HXTR-2001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5 | |
transistor GT 1083
Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz
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HXTR-5102 HPAC-200 HXTR-5102 HXTR-6101 transistor GT 1083 Hewlett-Packard application note 967 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz | |
ATF-21170
Abstract: 5965-8718E
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ATF-21170 ATF-21170 5965-8718E 5966-4979E 5965-8718E | |
702 TRANSISTOR
Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
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NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 | |
Contextual Info: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz Description |
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ATF-46101 5965-8731E | |
ATF-25570Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic |
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ATF-25570 ATF-25570 | |
TRANSISTOR 12 GHZ
Abstract: ATF-36077 amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite
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ATF-36077 ATF-36077 ATF-36077-STR ATF-36077-TRl 5962-0193E 5965-8726E TRANSISTOR 12 GHZ amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite | |
Contextual Info: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz |
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ATF-36077 ATF-36077 5962-0193E 5965-8726E | |
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SN 74 868
Abstract: HEMT marking P Z0502
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ATF-36163 SN 74 868 HEMT marking P Z0502 | |
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic |
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ATF-45101 5965-8736E | |
ATF-44101
Abstract: transistor marking P1 ghz
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ATF-44101 ATF-44101 rugg03 5965-8727E transistor marking P1 ghz | |
Contextual Info: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz |
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ATF-25170 ATF-25170 44475A4 0D1770b | |
5965-8734E
Abstract: max 8734E ATF-45171
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ATF-45171 ATF-45171 5965-8734E max 8734E | |
ATF-25735Contextual Info: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic |
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ATF-25735 ATF-25735 microns-24 | |
hemt lnb
Abstract: ATF36077-STR ATF-36077
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ATF-36077 sATF-36077 ATF-36077-TRPl ATF-36077-STR hemt lnb ATF36077-STR | |
Transistor TT 2246
Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
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ATF-36163 OT-363 SC-70) Transistor TT 2246 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P | |
Transistor TT 2246
Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
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ATF-36163 OT-363 SC-70) 5965-4747E Transistor TT 2246 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 | |
ZO 103 MA 75 623Contextual Info: H E W L E T T - P A C K A R D / C M PN TS m blE D • 4 4 4 7 5A 4 0 0 0 ^ 7 6 0 t.E7 H H P A AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip H EW LETT PACKARD Chip Outline Features 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz |
OCR Scan |
AT-01600 ZO 103 MA 75 623 |