4 GHZ TRANSISTOR Search Results

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz

transistor bf 968

Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O

HXTR-5103

Abstract: HXTR-5101 it 5001 HXTR-5001 S21E
Contextual Info: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID

HXTR-2001

Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5
Contextual Info: KOP Features HXTR-6001 I 0.013 TYP. • EMITTER PAD CIRCUITS M r COM PONENTS LOW NOISE TRANSISTOR CHIP ■- LOW NOISE FIGURE 1.7 dB Typical at 2 GHz 2.7 dB Typical at 4 GHz HIGH GAIN AT NOISE FIGURE BIAS 13.0 dB Typical at 2 GHz 9.0 dB Typical at 4 GHz 330 (0.013)

transistor GT 1083

Abstract: Hewlett-Packard application note 967 HXTR-5102 4 ghz transistor hewlett-packard application note 972 Y2w TRANSISTOR HP 9605 HP-67 Silicon Bipolar Transistor Hewlett-Packard transistor amplifier 3 ghz
Contextual Info: PACKARD MM COM PON EN TS LINEAR POWER TRANSISTOR HXTR-5102 Features 20.3 TYP. 0.80 HIGH P1dB LINEAR POWER 29 dBm Typical at 2 GHz 27.5 dBm Typical at 4 GHz 14.2 (0.b6) TYP. 3-05 TYR ( 0 . 12 ) 2.0 (0.0801 HIGH P1dB GAIN 11.5 dB Typical at 2 GHz 7 dB Typical at 4 GHz

ATF-21170

Abstract: 5965-8718E
Contextual Info: 0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz • Hermetic Gold-Ceramic Microstrip Package

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

Contextual Info: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz Description

ATF-25570

Contextual Info: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic

TRANSISTOR 12 GHZ

Abstract: ATF-36077 amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite
Contextual Info: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz

Contextual Info: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz

SN 74 868

Abstract: HEMT marking P Z0502
Contextual Info: What mLliM HEWLETT* PACKARD 1.5-18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A ssociated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic

ATF-44101

Abstract: transistor marking P1 ghz
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic

Contextual Info: Thal PACKARD HEWLETT WLKM 0 .5 -1 0 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 F eatures • Low N oise Figure: 0.8 dB Typical at 4 GHz • High A ssociated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical Pi dB at 4 GHz

5965-8734E

Abstract: max 8734E ATF-45171
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz

ATF-25735

Contextual Info: 0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1 dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic

hemt lnb

Abstract: ATF36077-STR ATF-36077
Contextual Info: What mLliM HEWLETT* PACKARD 2-18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz

Transistor TT 2246

Abstract: 4747E Gm 3842 atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1 HEMT marking P
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:

Transistor TT 2246

Abstract: 4747E TT 2246 transistor atf 36163 Low Noise Amplifier ATF-36163 ATF-36163-BLK ATF-36163-TR1
Contextual Info: 1.5 – 18 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz • Maximum Available Gain:

ZO 103 MA 75 623

Contextual Info: H E W L E T T - P A C K A R D / C M PN TS m blE D • 4 4 4 7 5A 4 0 0 0 ^ 7 6 0 t.E7 H H P A AT-01600 Up to 4 GHz General Purpose Silicon Bipolar Transistor Chip H EW LETT PACKARD Chip Outline Features 22.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi dB at 2.0 GHz