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401-A
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Wakefield Thermal Solutions
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HEATSINK POWER TO-3 BLK |
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401A
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Wakefield Thermal Solutions
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Thermal - Heat Sinks, Fans, Thermal Management, HEATSINK POWER TO-3 BLK |
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VS4401AMH
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VANGUARD
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40V/130A N-Channel Advanced Power MOSFET with 1.4 mOhm typical RDS(on) at 10V VGS, TO-263 package, designed for high efficiency and fast switching applications. |
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HSS3401A
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Huashuo Semiconductor
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P-Ch 30V Fast Switching MOSFET HSS3401A with -4.3A continuous drain current, 42mΩ typical RDS(ON) at VGS=-10V, low gate charge, and SOT-23 package for small power switching applications. |
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VS4401AKH
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VANGUARD
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40V/260A N-Channel Advanced Power MOSFET in TOLL package with ultra-low RDS(on) of 0.85 mΩ at VGS=10V, designed for high-efficiency power applications requiring low conduction losses and high current handling. |
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JMSH0401ATSQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V 0.9mΩ sTOLL N-Ch Power MOSFET in PowerJE7x8 package, with 352A continuous drain current, ultra-low RDS(ON), standard threshold VGS, and AEC-Q101 qualified for automotive applications. |
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JMTJ3401A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.2A continuous drain current, and low on-resistance of less than 68mΩ at VGS = -2.5V, available in SOT-23-3L package. |
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JMSH0401ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel TOLL power MOSFET in PowerJE10x12 package with 1.0 mΩ typical RDS(ON) at 10V VGS, 337A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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VS4401ATH
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VANGUARD
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40V/130A N-Channel Advanced Power MOSFET with 1.4 mΩ typical RDS(on) at VGS=10V, 400A silicon-limited current, TO-220AB package, and 375W power dissipation at 25°C. |
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JMTL3401A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MosFET JMTL3401A in SOT-23 package, -30V, -4.2A, with RDS(ON) less than 47mΩ at VGS = -10V, featuring advanced trench technology and low gate charge. |
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CJ3401A
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JCET Group
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P-Channel Enhancement Mode MOSFET in SOT-23 package, with -30V Drain-Source Voltage, -4.2A continuous drain current, and 60mΩ typical RDS(on) at -10V VGS. |
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AK3401AY
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 80mΩ at -2.5V gate voltage, suitable for load switch and PWM applications in SOT-23-3L surface mount package. |
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CJK3401A
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JCET Group
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P-Channel enhancement mode field effect transistor in SOT-23-3L package with -30V drain-source voltage, -4.2A continuous drain current, and 60mΩ typical RDS(on) at -10V VGS. |
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JMSH0401ATL
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Jiangsu JieJie Microelectronics Co Ltd
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40V 1.0mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 336A continuous drain current, ultra-low RDS(ON), low gate charge, and 100% UIS tested for power management and switching applications. |
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NCE3401A
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 85mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications in SOT-23 package. |
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SL3401A
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SLKOR
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CJK3401AH
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JCET Group
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P-Channel Enhancement Mode MOSFET in SOT-23-3L package with -30V Drain-Source Voltage, -4.2A continuous drain current, and low on-resistance of 50mΩ at -10V VGS. |
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NCE3401AY
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 120mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications. |
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VS4401AMH
